IPD65R380E6ATMA1 vs IPD60N10S412ATMA1 Comparison

Detailed side-by-side comparison of IPD65R380E6ATMA1 by Infineon and IPD60N10S412ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD60N10S412ATMA1 IPD60N10S412ATMA1 - 100V 60A N-Channel MOSFET | Infineon | Auto

IPD60N10S412ATMA1 - 100V 60A N-Channel MOSFET | Infineon | Auto

IPD60N10S412ATMA1 βœ“ Active

Specification Comparison

Parameter IPD65R380E6ATMA1 IPD60N10S412ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOSβ„’ E6 β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET, Enhancement Mode
Technology Superjunction (CoolMOSβ„’) β€”
Drain-Source Voltage (V_DS) 650 V β€”
Continuous Drain Current (I_D) at T_C 10.6 A β€”
R_DS(on) max at V_GS=10V 380 mΞ© β€”
R_DS(on) test conditions 3.2 A, 10 V β€”
Gate-Source Voltage (V_GS) max Β±20 V β€”
Gate Threshold Voltage (V_GS(th)) 3.5 V typ β€”
Gate Charge (Q_G) 39 nC at 10 V β€”
Input Capacitance (C_iss) 710 pF at 100 V β€”
Power Dissipation (P_D) at T_C 83 W β€”
Operating Temperature Range -55 Β°C to +150 Β°C β€”
Package PG-TO252-3 (DPAK), surface mount PG-TO252-3-313 (DPAK)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant (Green Product)
MSL Level 1 MSL1 (per JEDEC J-STD-020)
Part Number β€” IPD60N10S412ATMA1
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID, TC=25C) β€” 60 A
Power Dissipation (PD, TC=25C) β€” 94 W
RDS(on) Max @ VGS=10V β€” 12.2 mOhm
Operating Junction Temperature β€” -55 C to +175 C
Pin Count β€” 3 (2 + Tab)
Peak Reflow Temperature β€” 260 C
AEC-Q101 Qualification β€” Qualified (Automotive Grade)
Avalanche Tested β€” 100% Avalanche Tested
Halogen-Free β€” Yes (per Infineon definition)

Datasheets & Resources

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