IPD90N03S4L02ATMA1 vs BSC014N06NSATMA1 Comparison
Detailed side-by-side comparison of IPD90N03S4L02ATMA1 by Infineon and BSC014N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
IPD90N03S4L02ATMA1 β Active
Specification Comparison
| Parameter | IPD90N03S4L02ATMA1 | BSC014N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.89 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide), OptiMOS-T2 trench | OptiMOS 5 (shielded-gate trench) |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Tc | 90 A | 100 A |
| Power Dissipation (PD) at Tc | 136 W | β |
| RDS(on) Max at VGS=10 V | 2.2 mΞ© | β |
| RDS(on) Max at VGS=4.5 V | [DATA_NEEDED: typical value at VGS=4.5 V] | β |
| Gate Drive Voltage (VGS) | 4.5 V to 10 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical value] | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Avalanche Rated | 100% Avalanche tested | β |
| Package | PG-TO252-3-11 (DPAK, surface mount) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020, up to 260Β°C peak reflow) | 1 |
| RoHS Status | Compliant (Green Package) | Compliant |
| Automotive Qualification | AEC-Q101 qualified | β |
| Series | OptiMOS-T2 | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 60 V |
| Gate-Source Voltage (VGS) Max | β | +/- 20 V |
| Continuous Drain Current (ID) at Ta | β | 30 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Typ @ VGS=10V | β | 1.4 mOhm |
| On-Resistance RDS(on) Max @ VGS=10V | β | 1.45 mOhm |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 156 W |
| Operating Temperature Range | β | -55C to +150C |