IPD90N03S4L02ATMA1 vs IPD090N03LGATMA1 Comparison
Detailed side-by-side comparison of IPD90N03S4L02ATMA1 by Infineon and IPD090N03LGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
IPD90N03S4L02ATMA1 β ActiveSpecification Comparison
| Parameter | IPD90N03S4L02ATMA1 | IPD090N03LGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.34 |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide), OptiMOS-T2 trench | β |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Tc | 90 A | β |
| Power Dissipation (PD) at Tc | 136 W | β |
| RDS(on) Max at VGS=10 V | 2.2 mΞ© | β |
| RDS(on) Max at VGS=4.5 V | [DATA_NEEDED: typical value at VGS=4.5 V] | β |
| Gate Drive Voltage (VGS) | 4.5 V to 10 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical value] | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Avalanche Rated | 100% Avalanche tested | β |
| Package | PG-TO252-3-11 (DPAK, surface mount) | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020, up to 260Β°C peak reflow) | 1 (unlimited) |
| RoHS Status | Compliant (Green Package) | Compliant |
| Automotive Qualification | AEC-Q101 qualified | β |
| Series | OptiMOS-T2 | β |
| Drain-Source Voltage (Vdss) | β | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | β | 40 A |
| Continuous Drain Current (Id) @ Tc=100C | β | [DATA_NEEDED: Id at 100C] |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed Id] |
| Maximum Power Dissipation (Pd) @ Tc=25C | β | 42 W |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | β | 9 mOhm (typical) |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | β | [DATA_NEEDED: Rds(on) at 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) typical] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: Coss] |
| Reverse Recovery Charge (Qrr) | β | [DATA_NEEDED: Qrr] |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Technology Family | β | OptiMOS 30V |
| Configuration | β | Single |