IPD90P04P4L04ATMA2 vs IPD50P04P413ATMA2 Comparison

Detailed side-by-side comparison of IPD90P04P4L04ATMA2 by Infineon and IPD50P04P413ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD90P04P4L04ATMA2 IPD90P04P4L04ATMA2 - -40V P-Ch 90A 4.3mOhm OptiMOS | Infineon

IPD90P04P4L04ATMA2 - -40V P-Ch 90A 4.3mOhm OptiMOS | Infineon

IPD90P04P4L04ATMA2 βœ“ Active
Infineon
IPD50P04P413ATMA2 IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2

IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2

IPD50P04P413ATMA2 βœ“ Active

Specification Comparison

Parameter IPD90P04P4L04ATMA2 IPD50P04P413ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.22 $0.42
Part Number IPD90P04P4L04ATMA2 β€”
Manufacturer Infineon Technologies β€”
Family OptiMOS-P2 β€”
Channel Type P-Channel β€”
Drain-Source Voltage (Vds) -40 V β€”
Continuous Drain Current (Id) at Tc=25C -90 A β€”
Power Dissipation (Pd) at Tc=25C 125 W β€”
On-State Resistance Rds(on) typ at Vgs=-10V 4.3 mOhm β€”
Gate Threshold Voltage Vgs(th) typ [DATA_NEEDED: Vgs(th) typical value] β€”
Maximum Junction Temperature 175 C β€”
Operating Temperature Range -55 C to +175 C -55 Β°C to +175 Β°C
Package PG-TO252-3-313 (DPAK) PG-TO252-3-313 (DPAK)
Mounting Type Surface Mount Surface Mount
Number of Pins 3 (2 + Tab) β€”
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] 1
Polarity / Device Type β€” P-Channel MOSFET
Technology β€” OptiMOS-P2 (Trench)
Drain-Source Voltage (VDS) β€” -40 V
Continuous Drain Current (TC=25Β°C, ID) β€” 50 A
Continuous Drain Current (TC=100Β°C, ID) β€” [DATA_NEEDED: ID @ 100Β°C]
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed IDM]
Power Dissipation (TC=25Β°C, Ptot) β€” 58 W
On-State Resistance (RDS(on)) @ VGS=-10V β€” 9.2 mΞ© (typ) / 12.6 mΞ© (max)
On-State Resistance (RDS(on)) @ VGS=-4.5V β€” [DATA_NEEDED: RDS(on) @ VGS=-4.5V]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th)]
Gate-Source Voltage (VGS) max β€” Β±20 V
Maximum Junction Temperature (TJ,max) β€” 175 Β°C
Standard Pack Quantity (13" reel) β€” 2500 pcs

Datasheets & Resources

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