IPG20N10S436AATMA1 vs IAUC60N04S6L039ATMA1 Comparison

Detailed side-by-side comparison of IPG20N10S436AATMA1 by Infineon and IAUC60N04S6L039ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N10S436AATMA1 IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon

IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon

IPG20N10S436AATMA1 βœ“ Active
Infineon
IAUC60N04S6L039ATMA1

IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6L039ATMA1 βœ“ Active

Specification Comparison

Parameter IPG20N10S436AATMA1 IAUC60N04S6L039ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.72
Configuration Dual N-Channel (2 Elements with Built-in Diode) β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) 20 A (per channel) β€”
Total Power Dissipation (PD) 43 W β€”
Operating Mode Enhancement Mode β€”
Package PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8 (SSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
Operating Temperature (TJ max) +175 C β€”
JESD-609 Code e3 β€”
MSL Level MSL1 (260 C peak reflow) 1 (per JEDEC J-STD-020)
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Avalanche Tested 100% β€”
AOI Compatible Yes (Wettable Flank) β€”
RoHS Status Compliant (Green Product) Compliant
Channel Type N-Channel Normal Level β€”
FET Type β€” N-Channel
Technology β€” OptiMOS 6 (trench)
Drain-Source Voltage (V_DS) β€” 40 V
Continuous Drain Current (I_D, T_C=25C) β€” 60 A
Pulsed Drain Current (I_DM) β€” 240 A
R_DS(on) max @ V_GS=10V β€” 3.9 milliohm
Gate Threshold Voltage (V_GS(th)) β€” [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Q_G) β€” [DATA_NEEDED: total gate charge]
Power Dissipation (P_D) β€” 42 W
Operating Junction Temperature β€” -55C to +175C
Avalanche Rated β€” Yes (100% avalanche tested)

Datasheets & Resources

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