IPL60R060CFD7AUMA1 vs IPL65R070C7AUMA1 Comparison
Detailed side-by-side comparison of IPL60R060CFD7AUMA1 by Infineon and IPL65R070C7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R060CFD7AUMA1
IPL60R060CFD7AUMA1 - 600V CoolMOS CFD7 MOSFET, 60mΩ | Infineon
IPL60R060CFD7AUMA1 ✓ ActiveInfineon
IPL65R070C7AUMA1
IPL65R070C7AUMA1 - 650V 70mΩ CoolMOS C7 MOSFET | Infineon
IPL65R070C7AUMA1 ✓ ActiveSpecification Comparison
| Parameter | IPL60R060CFD7AUMA1 | IPL65R070C7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.03 | $1.68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ CFD7 | CoolMOS C7 |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D, Tc) | 40 A | — |
| Power Dissipation (P_D, Tc) | 219 W | — |
| R_DS(on) (max) at V_GS = 10 V | 60 mΩ | — |
| R_DS(on) (typ, datasheet) | 48 mΩ | — |
| Gate Charge (Q_G, typ) at V_GS = 10 V | 79 nC | — |
| Input Capacitance (C_iss) | 3193 pF | — |
| Output Capacitance (C_oss) | 62 pF | — |
| Gate-Source Voltage (V_GS) | ±20 V (max) | — |
| Gate Threshold Voltage (V_GS(th), typ) | 4.5 V | — |
| Operating Temperature Range | -40 °C to +150 °C | — |
| Package | PG-VSON-4-1 (Surface Mount) | PG-VSON-4 (surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Technology | — | Superjunction N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID) at TC=25°C | — | 28 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 70 mΩ (typical) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 169 W |
| Avalanche Energy (EAS) | — | 171 mJ |
| Operating Junction Temperature | — | -55°C to +150°C |
| Configuration | — | Single with built-in diode |
| Channel Type | — | N-Channel |
| Lead-Free | — | Yes |