IPL60R105P7AUMA1 vs IPA60R180P7SXKSA1 Comparison
Detailed side-by-side comparison of IPL60R105P7AUMA1 by Infineon and IPA60R180P7SXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R105P7AUMA1
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΞ© N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 β Active
Specification Comparison
| Parameter | IPL60R105P7AUMA1 | IPA60R180P7SXKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| Technology | Superjunction (SJ) N-Channel Power MOSFET | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| On-Resistance (RDS(on)) max | 105 mΞ© | β |
| Continuous Drain Current (ID) at Tc | 33 A | 18 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (Ptot) at Tc | 137 W | β |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V | β |
| Gate Charge (Qg) typ | 45 nC | β |
| Operating Temperature Range | -55C to +150C | -55C to +150C (junction) |
| Package | PG-VSON-4 (4-pin SMD with exposed pad) | PG-TO220-3-312 (Through-Hole, 3 leads) |
| Mounting Type | Surface Mount | Through Hole |
| Channel Type | N-Channel | N-Channel |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| Lead-Free | Yes | Yes |
| Static Drain-Source On-Resistance (RDS(on)) | β | 180 mOhm (max at 25C) |
| Power Dissipation (PD) at Tc | β | 26 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: typical VGS(th)] |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Configuration | β | Single |