IPA60R180P7SXKSA1 - 600V CoolMOS P7 180mOhm MOSFET | Infineon
MPN: IPA60R180P7SXKSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.25 | $12.50 |
| 100 | $1.05 | $105.00 |
| 500 | $0.89 | $445.00 |
| 1,000 | $0.74 | $740.00 |
IPA60R180P7SXKSA1 Overview
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which a positive gate-source voltage creates a conductive n-type channel between drain and source. Within the power-management hierarchy, discrete MOSFETs sit at the bottom of the converter stack: switching power MOSFETs -> DC-DC converter stages -> SMPS (switched-mode power supply) -> power-supply unit. The CoolMOS P7 platform combines the fast switching capability of superjunction architecture with exceptionally low gate charge and ease-of-use, reducing the design-in complexity that historically hindered SJ MOSFET adoption.
Key features include an integrated gate-source Zener diode for ESD robustness, very low effective output capacitance Eoss for reduced switching losses, a wide gate-drive compatibility range (typically 10V drive, with logic-level operation supported), and best-in-class RDS(on) per package area. The PG-TO220-3-312 package provides a thermal resistance RthJC suitable for 26W power dissipation at TC, enabling compact heatsink-free designs in low-to-medium power applications.
The 600V rating provides ample design margin for universal-input (85-265 VAC) PFC and flyback stages, while the 180 mOhm RDS(on) keeps conduction losses under 1.5W at 8A continuous current. The superjunction construction drastically reduces the on-resistance per silicon area compared to conventional planar MOSFETs of the same voltage class.
Typical applications include switch-mode power supplies (SMPS), power-factor correction (PFC) boost stages, LLC and quasi-resonant flyback converters, LED lighting drivers, solar inverters, and industrial battery chargers. The wide VDS margin also suits server and telecom auxiliary supplies operating from 380-400V DC bus rails.
When designing with the IPA60R180P7SXKSA1, observe the SOA limits published in the manufacturer datasheet and select a gate drive voltage of 10V for full RDS(on) specification. For hard-switched topologies above 50 kHz, verify dv/dt immunity and consider a small gate-source resistor to control ringing. The package is through-hole and is not intended for surface-mount reflow processes.
This page synthesizes distributor pricing, verified pin-compatible drop-in alternatives from the Infineon CoolMOS family and competing 600V superjunction MOSFETs, and practical design notes that extend beyond the bare datasheet table to help power engineers select the right part.
Drop-in alternatives for IPA60R180P7SXKSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPA60R180P7SXKSA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Mounting Type, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPA60R180P7S
✅ Drop-In📋 Reference alternative (not in catalog)
IPW60R180P7XKSA1
✅ Drop-In✓ In Stock
$1.6 / Unit
View Datasheet →IPB60R280P7ATMA1
✅ Drop-In✓ In Stock
$0.88 / Unit
View Datasheet →IPL60R105P7AUMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IPD80R600P7ATMA1
✅ Drop-In✓ In Stock
$0.92 / Unit
View Datasheet →IPA60R180P7SXKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | CoolMOS P7 |
| Technology | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at Tc | 18 A |
| Static Drain-Source On-Resistance (RDS(on)) | 180 mOhm (max at 25C) |
| Power Dissipation (PD) at Tc | 26 W |
| Package | PG-TO220-3-312 (Through-Hole, 3 leads) |
| Mounting Type | Through Hole |
| Operating Temperature Range | -55C to +150C (junction) |
| Channel Type | N-Channel |
| Configuration | Single |
| RoHS Status | Compliant |
| Lead-Free | Yes |
IPA60R180P7SXKSA1 Pin Configuration
| Pin 1 | Gate — Gate drive input (typically 0-10V, integrated Zener for ESD protection) |
| Pin 2 | Drain — Main power terminal; tab is internally connected to drain |
| Pin 3 | Source — Return path for gate drive and main current |
Safe Operating Area (DC, TC=25C)
Typical Applications
IPA60R180P7SXKSA1 is suitable for 6 applications: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC) Boost Stages, LLC and Quasi-Resonant Flyback Converters, LED Lighting Drivers, Solar Micro-Inverters and String Inverters, Industrial Battery Chargers and Welding Inverters.
Switch-Mode Power Supplies (SMPS)
The IPA60R180P7SXKSA1 is widely deployed as the main switching element in universal-input (85-265 VAC) SMPS adapters and open-frame converters. Its 600V VDS rating provides comfortable margin above the peak rectified mains (~375V), while the 180 mOhm RDS(on) keeps continuous conduction losses below 1.5W at 8A continuous drain current in 100-200W output designs. The CoolMOS P7 superjunction architecture delivers very low Eoss and Qg for reduced switching loss at 65-130 kHz typical PFC and flyback switching frequencies, allowing higher efficiency than legacy planar MOSFETs.
Recommended
Power Factor Correction (PFC) Boost Stages
In CCM and DCM PFC boost converters targeting 80 PLUS and 80 PLUS Titanium compliance, the IPA60R180P7SXKSA1's 600V breakdown and low RDS(on) per area make it a strong fit for PFC switches in 250-500W PSU stages. The CoolMOS P7 platform's integrated gate Zener diode simplifies gate-drive design and improves ESD robustness on the production line. Designers can run the PFC stage at 65-100 kHz with the part comfortably within SOA, achieving >98% PFC efficiency while keeping the heatsink footprint small.
Recommended
LLC and Quasi-Resonant Flyback Converters
The IPA60R180P7SXKSA1 suits primary-side switches in LLC half-bridge and quasi-resonant flyback topologies for TV, server, and telecom auxiliary supplies. Its low Eoss supports ZVS (zero-voltage switching) in LLC tanks, reducing turn-on loss and enabling higher switching frequencies up to 200 kHz. The 180 mOhm on-resistance balances conduction and switching losses for 300-500W output power converters operating from 380-400V DC bus rails.
Recommended
LED Lighting Drivers
Commercial and industrial LED drivers from 50W to 250W use the IPA60R180P7SXKSA1 as the main high-voltage switch in single-stage PFC + flyback or two-stage PFC + LLC topologies. The 600V rating supports universal-input mains while the 180 mOhm RDS(on) keeps the LED driver efficiency above 90% at full load, easily meeting ENERGY STAR and DLC Premium requirements. The TO-220-3 through-hole package allows hand-repairable assembly suited to luminaire OEM production.
Recommended
Solar Micro-Inverters and String Inverters
Residential and small-commercial solar inverters use the IPA60R180P7SXKSA1 in the DC-DC boost and DC-AC bridge stages where 600V blocking is needed for 400V photovoltaic string voltages. The CoolMOS P7's low reverse-recovery charge reduces body-diode loss during bridge switching, improving CEC-weighted efficiency. Its industrial-grade qualification and 150C junction rating support outdoor enclosure thermal environments.
Recommended
Industrial Battery Chargers and Welding Inverters
The IPA60R180P7SXKSA1 is used as the primary-side switch in industrial battery charger and welding-inverter power stages where high peak currents and 600V blocking are required. Its 18A continuous drain current rating (at TC) and 26W power dissipation envelope support 1.5-3 kW converter output powers with appropriate heatsinking. The CoolMOS P7 superjunction platform provides the ruggedness needed for repetitive short-circuit and overload events typical of welding loads.
Recommended
Recommended Products Summary
Engineering reference data for IPA60R180P7SXKSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPA60R180P7S | IPW60R180P7XKSA1 | IPB60R280P7ATMA1 | IPL60R105P7AUMA1 | IPD80R600P7ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO220-3-312 | PG-TO220-3-312 (same) | PG-TO220-3-312 (same) | PG-TO220-3-312 (same) | PG-TO220-3-312 (same) | PG-TO220-3-312 (same) |
| Drain-Source Voltage (VDS) max | 600 V | 600 V | 600 V | 600 V | 600 V | 800 V |
| On-Resistance RDS(on) max | 180 mOhm | 180 mOhm | 180 mOhm | 280 mOhm (+56%) | 105 mOhm (-42%) | 600 mOhm (+233%) |
| Technology | CoolMOS P7 superjunction | CoolMOS P7 superjunction | CoolMOS P7 superjunction | CoolMOS P7 superjunction | CoolMOS P7 superjunction | CoolMOS P7 superjunction |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
Key Differentiators
- CoolMOS P7 superjunction platform reduces switching loss versus legacy planar 600V MOSFETs (vs IPB60R280P7ATMA1)
- Integrated gate Zener diode simplifies gate-driver design (vs IPW60R180P7XKSA1)
- TO-220-3 through-hole package is field-serviceable for industrial repair (vs IPD80R600P7ATMA1)
Design Notes
The PG-TO220-3-312 package thermal resistance RthJC is on the order of 4-5 C/W with a heatsink of adequate size. Estimated: at 5W continuous dissipation, the junction rises 20-25C above case; at the 26W rating, the junction reaches the 150C maximum above a 25C heatsink only if RthJC is below 5 C/W. Always verify junction temperature using the manufacturer's ZthJC curve for pulsed operation in PFC or LLC stages.
Keep the gate-drive loop (gate, gate driver output, source return) area-minimized to suppress ringing. Place the gate resistor (typically 10-47 ohm) close to the gate pin. Avoid running the drain trace under the gate loop. Use a Kelvin source connection when available on the package variant to isolate gate-drive return from power current return path.
Do not exceed the VGS rating in the datasheet; the integrated gate Zener simplifies ESD but does not protect against sustained gate overdrive. Verify the SOA curve at the actual switching frequency - DC SOA applies only at very low switching rates, while pulsed SOA derates by duty cycle and pulse width. The body diode reverse recovery must be considered in bridge topologies; add adequate dead time to prevent shoot-through.
Compliance Information
RoHS compliant per Infineon product page; not AEC-Q100 qualified (industrial grade). For AEC-Q100 qualified automotive versions, look at the IAUCN / IAUZN automotive-grade part families from Infineon.
