IPL60R125C7AUMA1 vs IPL65R070C7AUMA1 Comparison

Detailed side-by-side comparison of IPL60R125C7AUMA1 by Infineon and IPL65R070C7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPL60R125C7AUMA1 IPL60R125C7AUMA1 - 600V 17A 125mOhm CoolMOS C7 | Infineon

IPL60R125C7AUMA1 - 600V 17A 125mOhm CoolMOS C7 | Infineon

IPL60R125C7AUMA1 βœ“ Active
Infineon
IPL65R070C7AUMA1 IPL65R070C7AUMA1 - 650V 70mΞ© CoolMOS C7 MOSFET | Infineon

IPL65R070C7AUMA1 - 650V 70mΞ© CoolMOS C7 MOSFET | Infineon

IPL65R070C7AUMA1 βœ“ Active

Specification Comparison

Parameter IPL60R125C7AUMA1 IPL65R070C7AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.10 $1.68
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS C7
FET Type N-Channel β€”
Technology CoolMOS (superjunction) Superjunction N-Channel MOSFET
Drain-Source Voltage (VDS) 600 V 650 V
Continuous Drain Current (ID, Tc) 17 A β€”
On-State Resistance (RDS(on), max) 125 mOhm β€”
Power Dissipation (PD, Tc) 103 W β€”
Gate Threshold Voltage (VGS(th), typ) 3.5 V β€”
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] β€”
Package PG-VSON-4 (surface mount) PG-VSON-4 (surface mount)
Mounting Type Surface Mount Surface Mount
Pin Count 4 (Gate / Drain / Drain / Source) β€”
Operating Temperature Range -55 C to +150 C (junction) β€”
RoHS Status Compliant Compliant
MSL Level 1 (unlimited) [DATA_NEEDED: MSL rating]
Channel Mode Enhancement β€”
Drive Voltage (recommended) 10 V VGS β€”
Continuous Drain Current (ID) at TC=25Β°C β€” 28 A
Continuous Drain Current (ID) at TC=100Β°C β€” [DATA_NEEDED: ID at TC=100Β°C]
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V β€” 70 mΞ© (typical)
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/range]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC=25Β°C β€” 169 W
Avalanche Energy (EAS) β€” 171 mJ
Operating Junction Temperature β€” -55Β°C to +150Β°C
Configuration β€” Single with built-in diode
Channel Type β€” N-Channel
Lead-Free β€” Yes

Datasheets & Resources

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