Infineon

IPL60R125C7AUMA1 - 600V 17A 125mOhm CoolMOS C7 | Infineon

MPN: IPL60R125C7AUMA1 βœ“ Active
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600 V Vdss 17 A Id 125 mOhm Rds(on) PG-VSON-4 (surface mount) Package
From $2.1 USD / Unit
MOQ: 1 |
Price updated: 2026-09-15
Volume Pricing
Qty Unit Price Extended
1 $3.85 $3.85
10 $3.45 $34.50
100 $2.95 $295.00
500 $2.62 $1,310.00
1,000 $2.35 $2,350.00
3,000 $2.1 $6,300.00
ℹ️ All prices are in USD

IPL60R125C7AUMA1 Overview

The Infineon IPL60R125C7AUMA1 is a 600 V N-channel power MOSFET from the CoolMOS C7 superjunction family, rated for 17 A continuous drain current (Tc) and 103 W power dissipation (Tc), housed in a surface-mount PG-VSON-4 (4-pin) package. The device combines a low on-state resistance of 125 mOhm with 600 V drain-source breakdown, delivering best-in-class switching performance for high-frequency power conversion stages.

A superjunction (SJ) MOSFET is a high-voltage power MOSFET architecture that uses alternating P/N epitaxial columns in the drift region to overcome the silicon limit of conventional MOSFETs, dramatically reducing RDS(on) per unit area and improving switching loss trade-offs. The CoolMOS C7 family in particular targets hard-switching PFC, TTF (two-transistor forward), and LLC resonant stages in switched-mode power supplies, server PSUs, telecom rectifiers, and industrial welding/induction heating. The superjunction approach (pioneered and named by Infineon) yields substantially lower Eoss turn-off losses than prior generation CoolMOS CP devices while keeping the same 600 V-950 V voltage class.

Key specifications include a 600 V VDS maximum, 17 A ID continuous (Tc), 125 mOhm RDS(on) maximum, and 103 W power dissipation. The C7 generation also features an ultra-low figure-of-merit (RDS(on) x Qg) which reduces gate-drive losses and enables higher switching frequencies (typically 65 kHz to 300 kHz in PFC stages). The PG-VSON-4 package measures approximately 8x8 mm with a large exposed drain pad that doubles as the thermal pad, enabling very low thermal resistance and minimal parasitic source inductance for clean switching waveforms.

Typical applications span telecom/server SMPS power factor correction (PFC) boost stages, LLC half-bridge primary switches, two-transistor forward (TTF) converters, solar inverters, and industrial motor drives. Compared to planar MOSFETs, the C7 family typically halves switching losses in the 600 V class, allowing designers to either raise switching frequency (smaller magnetics) or push power density higher within the same thermal envelope. The IPL60R125C7AUMA1 in particular sits in the mid-current tier of the C7 family, making it well-suited to 1-3 kW power stages where its 125 mOhm on-resistance and 17 A rating align well with typical CCM PFC inductor ripple currents.

When designing with this part, pay close attention to gate-drive voltage and layout. CoolMOS C7 is fully enhanced at +10 V VGS (typical Vth around 3.5 V), so a standard gate-drive supply of 10-12 V is appropriate. The PG-VSON-4 source-pin layout minimizes common-source inductance; nevertheless the gate loop should be kept small with a 10 Ohm-47 Ohm gate resistor to dampen ringing. Thermal design must account for the fact that RDS(on) increases with temperature, so worst-case thermal analysis at 100 C junction is recommended.

This page synthesizes Infineon distributor pricing (as of 2026-09-15), drop-in alternatives in the same PG-VSON-4 footprint, and practical design notes not found in the bare manufacturer datasheet, including thermal, PCB layout, and gate-drive guidance.

Drop-in alternatives for IPL60R125C7AUMA1 β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Variants in this series

Same-series models that are drop-in compatible with IPL60R125C7AUMA1 (same form factor and footprint) β€” differing in Drain-Source Voltage (VDS), Technology.

Infineon
Drain-Source Voltage (VDS): 650 V
Technology: Superjunction N-Channel MOSFET
Compare with IPL60R125C7AUMA1 β†’

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

IPL60R125C7

βœ… Drop-In
πŸ“¦ PG-VSON-4
Identical silicon, base part number without AUMA1 tape-reel suffix; fully pin-to-pin compatible in PG-VSON-4

πŸ“‹ Reference alternative (not in catalog)

ℹ️ 5 cross-package part(s) hidden β€” different package requires PCB rework and is not a true drop-in replacement. Contact us if you need cross-package suggestions.

IPL60R125C7AUMA1 Maximum Ratings & Electrical Characteristics

Manufacturer Infineon Technologies
Series CoolMOS C7
FET Type N-Channel
Technology CoolMOS (superjunction)
Drain-Source Voltage (VDS) 600 V
Continuous Drain Current (ID, Tc) 17 A
On-State Resistance (RDS(on), max) 125 mOhm
Power Dissipation (PD, Tc) 103 W
Gate Threshold Voltage (VGS(th), typ) 3.5 V
Package PG-VSON-4 (surface mount)
Mounting Type Surface Mount
Pin Count 4 (Gate / Drain / Drain / Source)
Operating Temperature Range -55 C to +150 C (junction)
RoHS Status Compliant
MSL Level 1 (unlimited)
Channel Mode Enhancement
Drive Voltage (recommended) 10 V VGS

IPL60R125C7AUMA1 Pin Configuration

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin 1 Gate β€” Gate drive input
Pin 2 Drain β€” Drain terminal (connected to exposed pad)
Pin 3 Drain β€” Drain terminal (connected to exposed pad)
Pin 4 Source β€” Source terminal

Safe Operating Area (DC, Tj=25C)

DC Continuous Operation

Typical Applications

IPL60R125C7AUMA1 is suitable for 6 applications: Telecom/Server PFC Boost Stage, LLC Resonant Half-Bridge Primary, Two-Transistor Forward (TTF) Converter, Solar Inverter DC-DC Boost, Industrial Motor Drive Inverter, Welding and Induction Heating.

⚑

Telecom/Server PFC Boost Stage

The IPL60R125C7AUMA1 is purpose-built for 1-3 kW power-factor-correction (PFC) boost stages in server and telecom SMPS, where 600 V bus voltage and hard-switching operation at 65-130 kHz demand the lowest possible switching loss. The CoolMOS C7 family reduces Eoss turn-off loss by roughly 50% versus the prior CoolMOS CP generation, directly improving PFC efficiency by 0.3-0.6% in the 1-3 kW range. The 17 A continuous drain current and 125 mOhm RDS(on) are well matched to CCM-mode inductor ripple currents, while the PG-VSON-4 surface-mount package enables compact, high-density PCB layouts. Use it as the active boost switch in interleaved or single-stage bridgeless totem-pole PFC.

πŸ”§

LLC Resonant Half-Bridge Primary

The IPL60R125C7AUMA1 fits the primary-side switch position in LLC resonant half-bridge converters used in server, telecom, and industrial power supplies. CoolMOS C7's low output charge (Qoss) and low gate charge (Qg) minimize the dead-time body-diode conduction losses that dominate LLC efficiency at light load, while the 600 V VDS rating provides adequate margin for 400 V rectified mains. The 125 mOhm on-resistance keeps conduction loss acceptable at 1-2 kW, and the PG-VSON-4 footprint allows tight placement of the two primary switches to minimize commutation loop inductance. Suitable for 1-2.5 kW LLC stages operating at 100-200 kHz resonant frequency.

🏭

Two-Transistor Forward (TTF) Converter

The IPL60R125C7AUMA1 is rated for two-transistor forward converter (TTF) primary switches in industrial and telecom isolated DC-DC converters. TTF topology clamps the drain to input voltage (rather than 2x Vin as in single-transistor forward), so the 600 V rating provides comfortable headroom for 400 V rectified mains plus transformer leakage spikes. Each switch sees half the primary current, so the 17 A continuous drain rating easily supports 1-2 kW designs. CoolMOS C7's low Eoss improves light-load efficiency and enables snubber simplification, while the PG-VSON-4 package keeps the primary-side switch area compact for high-density brick converters.

πŸ’‘

Solar Inverter DC-DC Boost

In solar string inverters, the IPL60R125C7AUMA1 can serve as the high-side switch in DC-DC boost or HERIC inverter bridges operating from PV panel voltages up to 600 V. The CoolMOS C7 family delivers low switching loss at 50-100 kHz, which is critical to maximize inverter efficiency across a wide load range. The 17 A continuous drain rating supports 5-10 kW residential string inverters when paralleled with one additional device, and the PG-VSON-4 footprint enables compact PCB designs that fit in NEMA-rated enclosures. RoHS compliance and 150 C junction rating support outdoor long-life operation.

🏭

Industrial Motor Drive Inverter

The IPL60R125C7AUMA1 suits the high-side or low-side switch position in 3-phase industrial motor drive inverter bridges (up to 480 V AC mains). CoolMOS C7's low on-resistance and low Qg improve inverter efficiency and reduce thermal stress on the heatsink, while 17 A continuous drain rating supports 3-5 HP (2.2-3.7 kW) drives at typical 8 kHz-16 kHz PWM switching. The PG-VSON-4 surface-mount package is well-suited to FR4-based inverter power modules where compact layout and high isolation spacing are priorities. Industrial temperature range to 150 C junction allows operation in enclosed cabinets.

⚑

Welding and Induction Heating

The IPL60R125C7AUMA1 fits hard-switched or zero-voltage-switching (ZVS) high-frequency stages in induction heating cooktops and small industrial welding inverters operating from rectified 400 V mains. CoolMOS C7's low Eoss reduces turn-off loss in resonant ZVS operation, enabling higher switching frequencies (50-200 kHz) that shrink magnetic components and improve power density. The 17 A continuous drain and 125 mOhm on-resistance support 2-4 kW output power, while the PG-VSON-4 surface-mount package is favored for SMD-based inverter modules. Designers should add adequate snubbing to manage leakage-inductance spikes during turn-off.

What is the drain-source breakdown voltage of IPL60R125C7AUMA1?
The IPL60R125C7AUMA1 has a 600 V drain-source breakdown voltage (VDS). According to the Infineon product page, this part belongs to the 500 V-950 V CoolMOS C7 industrial superjunction MOSFET family and is qualified for high-voltage power-conversion stages. Designers should still add a 20-30% derating margin for repetitive voltage spikes from leakage inductance and clamp ringing in hard-switched topologies.
What is the on-resistance of IPL60R125C7AUMA1?
The maximum on-state resistance (RDS(on)) is 125 mOhm at a gate drive of 10 V. The figure-of-merit (FOM) of the CoolMOS C7 family is the key advantage: the RDS(on) x Qg product is substantially lower than planar 600 V MOSFETs, which translates into lower conduction and switching losses simultaneously in 1-3 kW PFC and LLC stages.
What package does the IPL60R125C7AUMA1 use?
The IPL60R125C7AUMA1 ships in the Infineon PG-VSON-4 surface-mount package, which is a 4-pin leadless package with a large exposed drain pad. The exposed pad serves as both the drain electrical connection and the primary thermal path, so the PCB land pattern must include thermal vias to inner copper planes to keep junction temperature within safe limits.
Where can I buy the IPL60R125C7AUMA1?
The IPL60R125C7AUMA1 is in stock at DigiKey and Mouser (as of 2026-09-15), with additional inventory at Octopart-listed distributors including Win Source and Veswin. Volume pricing for 1,000 pieces is approximately 2.35 USD per unit. Authorized distributors provide manufacturer traceability and warranty; broker inventory may be cheaper but should be sourced from the franchised channel for production builds.
What is the lead time for IPL60R125C7AUMA1?
The lead time at franchised distributors (DigiKey, Mouser) is typically 4-8 weeks when ordered in full reel quantities (3,000 pieces), as of 2026-09-15. Sample quantities (1-100 pieces) are usually shippable immediately from distributor stock. For production volumes above 30,000 pieces, ordering 12-16 weeks in advance is recommended due to wafer-fab cycle times at Infineon.
What is the price of IPL60R125C7AUMA1?
As of 2026-09-15, distributor pricing for the IPL60R125C7AUMA1 starts at approximately 3.85 USD for 1 piece, dropping to about 2.35 USD at 1,000 pieces and 2.10 USD at 3,000 pieces (full reel). These figures reflect open-market distributor pricing on DigiKey and Mouser; contract pricing for OEM volumes may be substantially lower and is available through Infineon direct sales.
How does IPL60R125C7AUMA1 compare to IPB65R125C7ATMA2?
The IPL60R125C7AUMA1 uses a PG-VSON-4 (leadless SMD) package, while the IPB65R125C7ATMA2 ships in a TO-263 (D2PAK) package - they are NOT drop-in pin-compatible despite similar C7 silicon and 125 mOhm RDS(on). Both share the CoolMOS C7 superjunction architecture at 600 V, but the IPL part is targeted at compact SMD designs while the IPB version suits through-hole or larger-footprint thermal designs.
What is the difference between IPL60R125C7AUMA1 and STP28N60DM2?
The IPL60R125C7AUMA1 is an Infineon CoolMOS C7 superjunction part at 600 V/17 A/125 mOhm in PG-VSON-4, while the STMicroelectronics STB28N60DM2 uses MDmesh DM2 planar technology at 600 V/28 A in a TO-263 package. The Infineon part typically wins on switching loss (better for high-frequency PFC), while the ST part offers higher continuous current. They are NOT pin-compatible due to different packages.
What is a drop-in replacement for IPL60R125C7AUMA1?
The best drop-in replacement (same PG-VSON-4 footprint, same silicon family) is the IPL60R125C7 base part itself - the AUMA1 suffix only differs in tape-and-reel packaging orientation. For cross-brand drop-ins in the same PG-VSON-4 package, the market is thin because most 600 V 125 mOhm SMD MOSFETs ship in D2PAK or TO-220 packages. The cross-reference list on this page lists parts with the closest parametric match.
When should I choose the IPL60R125C7AUMA1 over the IPB65R125C7ATMA2?
Choose the IPL60R125C7AUMA1 (PG-VSON-4) when your design requires a compact surface-mount solution with low-profile height (typically 1 mm) and you can dedicate PCB copper area to thermal dissipation. Choose the IPB65R125C7ATMA2 (TO-263 / D2PAK) when you need through-hole-friendly hand-solderability, larger thermal mass, or compatibility with legacy wave-solder processes. Both share CoolMOS C7 silicon.
Is IPL60R125C7AUMA1 suitable for PFC boost stages?
Yes, the IPL60R125C7AUMA1 is explicitly designed for hard-switching PFC boost and TTF/LLC topologies. The CoolMOS C7 family reduces Eoss turn-off loss by approximately 50% versus CoolMOS CP, which directly improves PFC efficiency at 65 kHz-130 kHz switching frequencies. For 1-3 kW PFC stages with 600 V bus voltage, 125 mOhm on-resistance and 17 A drain current are well matched to continuous-conduction-mode operation.
What is the gate-drive voltage requirement for IPL60R125C7AUMA1?
The recommended gate-drive voltage is +10 V VGS, with absolute maximum VGS of +/-20 V. The typical gate threshold voltage VGS(th) is around 3.5 V, so 10 V drive gives strong enhancement and minimizes RDS(on). For best switching performance and lowest gate-charge losses, use a 12 V gate-drive supply with a 10 Ohm-22 Ohm gate resistor in series to dampen parasitic ringing.
Where to download IPL60R125C7AUMA1 datasheet PDF?
The official Infineon datasheet PDF can be downloaded from the manufacturer product page at infineon.com/part/IPL60R125C7, or via the static datasheets mirror at static.datasheets.com/doc/23627458-infineon-ipl60r125c7auma1-ds.pdf. The datasheet contains the SOA curves, gate-charge characteristics, body-diode reverse-recovery data, and thermal resistance values needed for PFC/LLC design.
Where can I find the IPL60R125C7AUMA1 pinout?
The PG-VSON-4 pinout for the IPL60R125C7AUMA1 has 4 pins: Pin 1 = Gate, Pins 2-3 = Drain (connected to the exposed thermal pad), Pin 4 = Source. The exposed bottom pad is the primary drain terminal and the main thermal path. A diagram of this pinout is shown on the package diagram section of this product page and matches the Infineon official datasheet.
What are the key specifications of IPL60R125C7AUMA1 that engineers should know?
According to the Infineon datasheet, the headline specifications are: 600 V VDS max, 17 A continuous ID at Tc, 125 mOhm RDS(on) max at VGS=10 V, 103 W power dissipation at Tc, and PG-VSON-4 SMD package. The CoolMOS C7 superjunction technology gives this part a low figure-of-merit (RDS(on) x Qg) that enables high-frequency, high-efficiency operation in PFC, TTF, and LLC power stages.

Engineering reference data for IPL60R125C7AUMA1 β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the IPL60R125C7AUMA1 when your design needs a 600 V superjunction MOSFET in a compact surface-mount PG-VSON-4 package for 1-3 kW power-conversion stages. It is the best fit for hard-switching PFC, TTF forward, and LLC resonant half-bridge topologies where CoolMOS C7's low Eoss turn-off loss and ultra-low RDS(on) x Qg figure-of-merit deliver measurable efficiency improvements. If you need a through-hole footprint for hand-rework or higher thermal mass, select the IPI60R125C7 (I2PAK) or IPP60R125C7 (TO-220) instead - they share the same C7 silicon. If you need a lower RDS(on) or higher continuous current (above 20 A), look at IPL60R075C7 (75 mOhm) or IPL60R360C7 (360 mOhm, lower current class) within the same C7 family.

Comparison with Alternatives

Parameter This Product IPL60R125C7 IPB65R125C7ATMA2 IPI60R125C7
Package PG-VSON-4 PG-VSON-4 - same TO-263 (D2PAK) - different PG-TO-262 (I2PAK) - different
Brand Infineon Infineon Infineon Infineon
Drain-Source Voltage (VDS) 600 V 600 V 650 V 600 V
Continuous Drain Current (ID, Tc) 17 A 17 A 17 A 17 A
On-Resistance (RDS(on), max) 125 mOhm 125 mOhm 125 mOhm 125 mOhm
Power Dissipation (Tc) 103 W 103 W 105 W 104 W
Technology CoolMOS C7 (superjunction) CoolMOS C7 (superjunction) CoolMOS C7 (superjunction) CoolMOS C7 (superjunction)
Mounting Type Surface Mount Surface Mount Surface Mount (D2PAK) Through-Hole (I2PAK)

Key Differentiators

  • Surface-mount PG-VSON-4 footprint enables compact, low-profile designs (vs IPB65R125C7ATMA2 (TO-263 D2PAK))
  • CoolMOS C7 superjunction technology minimizes switching loss (vs STB28N60DM2 (MDmesh DM2 planar))
  • 125 mOhm RDS(on) is well matched to 1-3 kW power stages (vs STL33N60M2 (lower RDS(on), higher ID))

Design Notes

Estimated: at full 17 A load, conduction loss equals I^2 x RDS(on) = 17^2 x 0.125 = 36 W. With PG-VSON-4 and proper PCB thermal-via layout (junction-to-ambient ~50 C/W), the junction temperature rises about 50 C above 25 C ambient, easily within the 150 C max. Designers should still de-rate to 50-70% of rated current in continuous operation to keep Tj below 100 C for long-term reliability. Use Infineon's application note AN-2015-04 CoolMOS C7 thermal design guidelines.

The PG-VSON-4 package requires thermal vias under the exposed drain pad (typically 9-16 vias of 0.3 mm diameter) connecting to inner copper planes. The gate loop area must be minimized: route the gate drive return path directly from the source pin (Pin 4) back to the gate-driver ground to avoid common-source inductance that slows switching and causes ringing. Keep drain and source copper pours as large as practical to maximize heat spreading. Reference Infineon PG-VSON-4 land-pattern application note.

Use a 10 Ohm-22 Ohm gate resistor in series with the gate pin to dampen parasitic ringing during fast switching transitions. Place a 100 kOhm gate-to-source pull-down resistor to ensure the MOSFET stays off if the gate driver loses supply. Place a 1 nF-10 nF ceramic bypass capacitor close to the gate-driver supply pin (VDD). Keep high-current drain loops (input cap -> drain -> source -> input cap GND) tight to minimize commutation loop inductance and voltage overshoot.

Do not exceed the absolute maximum VDS of 600 V - account for transformer leakage inductance spikes (typically 30-50% above nominal). Use a TVS clamp or RCD snubber across the primary to limit spike voltages. Do not parallel IPL60R125C7AUMA1 devices without gate-source resistor balancing, as threshold-voltage mismatch can cause current imbalance. Avoid body-diode hard commutation in bridge topologies; CoolMOS C7 body diode is optimized for PFC and is NOT suitable for full-bridge ZVS transition without external Schottky anti-parallel diodes.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial-grade part. For automotive OBC and inverter applications, consider the corresponding automotive-qualified part in the same CoolMOS C7 family.

Data verified on: 2026-09-15 β€” data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon Technologies IPL60R125C7AUMA1 IPL60R125C7 IPB65R125C7ATMA2 IPI60R125C7 IPP60R125C7 CoolMOS C7 CoolMOS superjunction MOSFET N-channel MOSFET power MOSFET PG-VSON-4 VSON TO-263 (D2PAK) PG-TO-262 (I2PAK) PG-TO-220 discrete semiconductor PFC stage LLC resonant converter TTF forward converter Eoss turn-off loss RDS(on) gate charge Qg figure-of-merit 600 V breakdown telecom SMPS solar inverter industrial motor drive RoHS compliant REACH compliant
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