IPP045N10N3GXKSA1 vs IPP075N15N3GXKSA1 Comparison
Detailed side-by-side comparison of IPP045N10N3GXKSA1 by Infineon and IPP075N15N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP045N10N3GXKSA1 - 100V 4.5mΞ© OptiMOS 3 Power MOSFET | Infineon
IPP045N10N3GXKSA1 β ActiveInfineon
IPP075N15N3GXKSA1 - 150V 100A OptiMOS 3 Power MOSFET | Infineon
IPP075N15N3GXKSA1 β ActiveSpecification Comparison
| Parameter | IPP045N10N3GXKSA1 | IPP075N15N3GXKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.20 | $1.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPP045N10N3GXKSA1 | β |
| Technology | OptiMOS 3 | N-Channel MOSFET (OptiMOS 3) |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | β |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25Β°C | 100 A | β |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100Β°C | [DATA_NEEDED: I_D at TC=100C] | β |
| Pulsed Drain Current (I<sub>D,pulse</sub>) | 137 A | β |
| On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V | 4.5 mΞ© | β |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 3.5 V (typical, per LCSC listing) | β |
| Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25Β°C | 214 W | β |
| Package | TO-220-3 (PG-TO220-3) through-hole | PG-TO220-3 (TO-220 through-hole) |
| Operating Temperature Range | -55 Β°C to +175 Β°C (junction, typical MOSFET limit) | [DATA_NEEDED: junction operating temperature range] |
| Mounting Type | Through Hole | Through Hole |
| RoHS Status | Compliant (per LCSC datasheet excerpt) | β |
| Lead-Free | Yes (Infineon G/GX part suffix) | β |
| MSL Level | N/A (through-hole package) | β |
| Product Family | β | OptiMOS 3 |
| Drain-Source Voltage (VDS) | β | 150 V |
| Continuous Drain Current (ID, Tc=25C) | β | 100 A |
| Power Dissipation (PD, Tc=25C) | β | 300 W |
| On-State Resistance (RDS(on) max, VGS=10V) | β | 7.5 mOhm |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: gate-source voltage absolute max] |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Lead-Free / RoHS | β | RoHS Compliant |
| Ordering Code Suffix | β | GXKSA1 (Tube pack, RoHS compliant) |