IPP045N10N3GXKSA1 - 100V 4.5mΩ OptiMOS 3 Power MOSFET | Infineon
MPN: IPP045N10N3GXKSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.79 | $3.79 |
| 10 | $3.45 | $34.50 |
| 100 | $2.95 | $295.00 |
| 500 | $2.55 | $1,275.00 |
| 1,000 | $2.2 | $2,200.00 |
IPP045N10N3GXKSA1 Overview
An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device that uses an insulated gate to modulate current flow between drain and source terminals. MOSFETs occupy the transistor hierarchy as: MOSFET -> field-effect transistor -> transistor -> discrete semiconductor -> active electronic component. Within power-electronics systems, MOSFETs sit below wide-bandgap devices (GaN, SiC) and above bipolar junction transistors in switching-frequency and efficiency rankings. They are the workhorse of switched-mode power supplies (SMPS), motor drives, and synchronous rectification stages.
The IPP045N10N3GXKSA1's headline figures - 100 V breakdown, 4.5 mΩ on-resistance, and a 100 A continuous rating - are enabled by OptiMOS 3 trench-gate technology, which Infineon claims cuts R<sub>DS(on)</sub> by ~30% versus prior generations. A typical gate threshold (V<sub>GS(th)</sub>) sits around 3.5 V, fully enhanced at the standard 10 V drive. The TO-220-3 package provides a low thermal-resistance path to an external heatsink, which is mandatory for high-current operation.
Architecture is a planar-style trench FET optimised for low figure-of-merit (R<sub>DS(on)</sub> × Q<sub>G</sub>) at 100 V, targeting high-frequency SMPS where switching loss dominates. The low gate charge (refer to the manufacturer datasheet for V<sub>GS</sub>-specific curves) enables fast transitions with reduced driver loss. Body-diode reverse-recovery characteristics are tuned for bridge topologies used in telecom and server power conversion.
Typical applications include primary-side switches in telecom and server SMPS, synchronous rectification in 48 V bus converters, solar inverters, motor-drive H-bridges, and automotive 12 V/24 V high-current load switches. The 100 V rating gives useful headroom for 48 V nominal telecom rails and industrial bus voltages.
When designing with this part, calculate worst-case conduction loss: P = I² × R<sub>DS(on)</sub> × R<sub>θJA</sub> temperature-correction factor. At 50 A continuous in a TO-220 with a small clip-on heatsink, junction temperature can approach the 175 °C limit; verify thermal margin before derating transient load events.
This page synthesises distributor pricing, verified drop-in alternatives, and practical thermal notes that the manufacturer datasheet alone does not provide.
Drop-in alternatives for IPP045N10N3GXKSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPP045N10N3GXKSA1 (same form factor and footprint) — differing in Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, RoHS Status.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPP075N15N3GXKSA1
✅ Drop-In✓ In Stock
$1.92 / Unit
View Datasheet →IPP037N08N3GXKSA1
✅ Drop-In✓ In Stock
$1.32 / Unit
View Datasheet →IPP100N12S305AKSA1
✅ Drop-In✓ In Stock
$2.05 / Unit
View Datasheet →STP45NF10
✅ Drop-In📋 Reference alternative (not in catalog)
FQP50N06L
✅ Drop-In📋 Reference alternative (not in catalog)
IPP045N10N3GXKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPP045N10N3GXKSA1 |
| Technology | OptiMOS 3 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C | 100 A |
| Pulsed Drain Current (I<sub>D,pulse</sub>) | 137 A |
| On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V | 4.5 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 3.5 V (typical, per LCSC listing) |
| Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C | 214 W |
| Package | TO-220-3 (PG-TO220-3) through-hole |
| Operating Temperature Range | -55 °C to +175 °C (junction, typical MOSFET limit) |
| Mounting Type | Through Hole |
| RoHS Status | Compliant (per LCSC datasheet excerpt) |
| Lead-Free | Yes (Infineon G/GX part suffix) |
| MSL Level | N/A (through-hole package) |
IPP045N10N3GXKSA1 Pin Configuration
| Pin 1 | Gate — Gate control input; drive with 10 V V<sub>GS</sub> for full enhancement |
| Pin 2 | Drain — Drain terminal; also electrically bonded to the metal tab |
| Pin 3 | Source — Source terminal; reference for gate-drive and load return |
Safe Operating Area (DC)
Typical Applications
IPP045N10N3GXKSA1 is suitable for 6 applications: Telecom 48V SMPS Primary-Side Switch, Synchronous Rectification in 48V Bus Converters, Solar Charge Controller / Off-Grid Inverter, Motor Drive H-Bridge / BLDC Switching, Automotive 12V/24V High-Current Load Switch, Industrial Welding / Plasma Cutting PSU.
Telecom 48V SMPS Primary-Side Switch
The IPP045N10N3GXKSA1's 100 V VDS provides ~52 V headroom over a telecom 48 V nominal bus (with 60 V transient tolerance per ETSI EN 300 132-2), making it ideal for primary-side switching in isolated DC-DC converters. Its 4.5 mΩ R<sub>DS(on)</sub> at 10 V V<sub>GS</sub> keeps conduction loss low even at 50-80 A primary currents, while the OptiMOS 3 figure-of-merit supports 100-300 kHz switching to shrink magnetics. Place between the bulk capacitor and the transformer primary; gate-drive at 10 V from a UCC27714 or similar isolated driver. Trade-off vs SiC: lower cost, slightly higher loss.
Recommended
Synchronous Rectification in 48V Bus Converters
For secondary-side synchronous rectification in 48 V-input isolated DC-DC converters (e.g., quarter-brick or eighth-brick modules), the IPP045N10N3GXKSA1 offers low R<sub>DS(on)</sub> at modest gate drive. Its 100 V VDS tolerates transformer leakage spikes and reflected voltage transients typical of 48 V-to-low-voltage conversion. The 100 A continuous rating supports high-density brick designs (300 W+) where multiple MOSFETs in parallel are not desired. Body-diode reverse recovery is tuned for CCM/DCM operation. Drive directly with a low-side driver such as IR2104PBF for optimal switching performance.
Recommended
Solar Charge Controller / Off-Grid Inverter
The IPP045N10N3GXKSA1 suits solar charge controllers and off-grid inverters operating at 24 V or 48 V battery buses where panel open-circuit voltages stay below 90 V. Its 4.5 mΩ R<sub>DS(on)</sub> minimises conduction loss in MPPT buck stages and high-side switching paths, while the 100 V VDS handles panel transients and inductive kickback. The TO-220-3 package is straightforward to mount on a heatsink inside an IP-rated enclosure. Pair with a current-sense amplifier such as INA240 for MPPT accuracy and telemetry to a microcontroller for logging.
Recommended
Motor Drive H-Bridge / BLDC Switching
In BLDC and PMSM motor-drive H-bridges for industrial or e-mobility auxiliaries, the IPP045N10N3GXKSA1 serves as the high-side or low-side switch in 24 V-72 V DC bus systems. Its 100 A continuous rating supports motors up to ~3 kW without paralleling, and the OptiMOS 3 family provides robust avalanche energy for hard-switched inductive loads. Drive from a three-phase gate driver such as IR2104SPBF or 2EDL5023U2DXTMA1. Verify heatsink sizing: at 30 A continuous and 50 V bus, conduction loss reaches ~5 W per switch.
Recommended
Automotive 12V/24V High-Current Load Switch
For automotive 12 V or 24 V load-switching applications such as high-current pumps, fans, PTC heaters, or LED headlight drivers, the IPP045N10N3GXKSA1 offers 100 A continuous switching capability in a robust TO-220-3 package. Its 100 V VDS provides generous margin against load-dump transients (per ISO 7637-2) and jump-start voltages up to 24 V. Drive via a logic-level PWM signal and an automotive-grade gate driver. For AEC-Q101-qualified automotive use, consider dedicated Infineon AutoMOS parts; this -G variant is industrial/consumer grade.
Recommended
Industrial Welding / Plasma Cutting PSU
In heavy industrial welding inverters, plasma cutters, and induction-heating PSUs where the DC bus reaches 60-90 V, the IPP045N10N3GXKSA1's 100 V breakdown and 214 W power dissipation support inverter-class switching at 20-100 kHz. Its 4.5 mΩ R<sub>DS(on)</sub> keeps conduction loss manageable at 200+ A peak currents, and the TO-220-3 mounts directly onto a chassis-mounted heatsink for thermal dissipation. Parallel two devices for kW-class designs, but verify balanced gate-drive and tight current-share layout. Add TVS diodes across drain-source for avalanche protection.
Recommended
Recommended Products Summary
Engineering reference data for IPP045N10N3GXKSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPP075N15N3GXKSA1 | IPP037N08N3GXKSA1 | IPP100N12S305AKSA1 | STP45NF10 | FQP50N06L |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | onsemi |
| Package | TO-220-3 (PG-TO220-3) | TO-220-3 (same) | TO-220-3 (same) | TO-220-3 (same) | TO-220-3 (same) | TO-220-3 (same) |
| V<sub>DS</sub> max (V) | 100 | 150 | 80 | 120 | 100 | 60 |
| Technology | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | STripFET | QFET |
Key Differentiators
- Lowest on-resistance in 100 V OptiMOS 3 family (vs IPP037N08N3GXKSA1)
- Mature OptiMOS 3 platform with broad design heritage (vs IPP100N12S305AKSA1)
- Higher current rating than legacy equivalents (vs STP45NF10)
Design Notes
Estimated: at 50 A continuous drain current and an R<sub>DS(on)</sub> of 4.5 mΩ at 25 °C, conduction loss is P = I² × R ≈ 11.3 W. Mount the TO-220-3 tab to a heatsink with R<sub>θSA</sub> ≤ 5 °C/W (e.g., a 4-inch clip-on aluminium heatsink) and use thermal compound. Junction-to-ambient θ<sub>JA</sub> without a heatsink exceeds 60 °C/W, which would push T<sub>j</sub> well above 175 °C at 50 A. Always verify transient thermal impedance for pulsed loads.
Place the IPP045N10N3GXKSA1 with its drain tab directly on a heatsink and minimise the loop area between the drain, transformer primary (or load), and the bulk capacitor. Use a gate-drive resistor of 10-47 Ω to suppress ringing; lower values give faster switching at the cost of EMI. Keep the gate-source loop compact and add a 10 kΩ pull-down on the gate to prevent spurious turn-on during controller startup.
Estimated: V<sub>GS(th)</sub> at 3.5 V means the device is NOT fully enhancement below 8 V V<sub>GS</sub>; R<sub>DS(on)</sub> rises sharply at lower gate drive. Do not attempt logic-level 3.3 V or 5 V gate signals without a charge-pump or driver stage. Also, the body diode reverse-recovery charge Q<sub>rr</sub> at 100 V is non-trivial - use a low-Q<sub>rr</sub> alternative for hard-switched bridges. Do not exceed the avalanche energy rating (E<sub>AS</sub>) during unclamped inductive switching events.
Compliance Information
RoHS-compliant per LCSC listing. Standard -G variant is not AEC-Q100 qualified; for AEC-Q100 automotive use select Infineon's AutoMOS designated parts. Lead-free G/GX suffix per Infineon part-number convention.
