IPP147N12N3GXKSA1 vs IPP200N15N3GXKSA1 Comparison
Detailed side-by-side comparison of IPP147N12N3GXKSA1 by Infineon and IPP200N15N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon
IPP147N12N3GXKSA1 β ActiveInfineon
IPP200N15N3GXKSA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
IPP200N15N3GXKSA1 β ActiveSpecification Comparison
| Parameter | IPP147N12N3GXKSA1 | IPP200N15N3GXKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $1.79 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS | β |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 3 |
| Transistor Type | N-Channel MOSFET | β |
| Configuration | Single with built-in diode | β |
| Drain-to-Source Voltage (Vdss) | 120 V | β |
| Continuous Drain Current (Id) at Tc=25C | 56 A | β |
| Continuous Drain Current (Id) at Ta | 56 A (Ta, per DigiKey listing) | β |
| Power Dissipation (Pd) at Tc=25C | 107 W | β |
| Operating Temperature Range | [DATA_NEEDED: Tj max and operating range] | β |
| Package | PG-TO220-3 (through-hole) | TO-220-3 (PG-TO220-3), through-hole |
| Mounting Type | Through Hole | Through Hole |
| Number of Pins | 3 (3+Tab) | β |
| Gate Charge (Qg) | [DATA_NEEDED: typical Qg value] | β |
| Rds(on) max | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] | β |
| Vgs(th) (Gate Threshold) | [DATA_NEEDED: typical gate threshold voltage] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: typical Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: typical Coss] | β |
| Reverse Recovery (trr) | [DATA_NEEDED: body-diode reverse recovery time] | β |
| Avalanche Energy Rating | Single-pulse avalanche rated | β |
| RoHS Status | Compliant (per distributor listing suffixes XKSA1) | Compliant |
| Lead-Free | Yes | Yes |
| Qualification | Automotive grade (per datasheet.live listing 'Automotive') | β |
| Packing Method | Tube | β |
| Drain-Source Voltage (VDS max) | β | 150 V |
| Continuous Drain Current (ID max, Tc) | β | 50 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on) max) | β | 20 mOhm at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg typ) | β | [DATA_NEEDED: Qg typical] |
| Total Power Dissipation (Ptot max, Tc=25C) | β | 150 W |
| Channel Type | β | N-Channel |
| Operating Junction Temperature Range | β | -55 C to +175 C |
| MSL Level | β | Not Applicable (through-hole) |