IPP200N15N3GXKSA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
MPN: IPP200N15N3GXKSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $2.96 | $29.60 |
| 100 | $2.41 | $241.00 |
| 500 | $2.07 | $1,035.00 |
| 1,000 | $1.79 | $1,790.00 |
IPP200N15N3GXKSA1 Overview
An N-channel MOSFET is a voltage-controlled majority-carrier device in which a positive gate-to-source voltage inverts the surface of an n-type channel region to allow electron flow between the drain and source terminals. Within the broader power-semiconductor taxonomy, the IPP200N15N3G belongs to the discrete MOSFET family, which itself falls under power transistors, which in turn are a subset of discrete semiconductors used in switched-mode power conversion, motor control, and load switching applications where high efficiency and fast switching are required.
Key differentiating specifications include a maximum drain-source on-resistance of 20 mOhm at VGS = 10 V, gate charge typically in the single-digit to low-double-digit nanocoulomb range characteristic of OptiMOS 3, and an Avalanche-rated rugged body diode that simplifies inductive-load designs. The OptiMOS 3 process delivers approximately 40 percent lower RDS(on) and 45 percent better figure-of-merit than the prior generation, allowing designers to consolidate two older devices into one part or to migrate from leaded to surface-mount packages at equivalent loss.
Architecturally, the device is a planar-cell N-channel enhancement-mode MOSFET with a vertical DMOS structure, integrating ESD protection at the gate and an avalanche-energy-rated intrinsic body diode. The TO-220-3 package provides a low thermal resistance path via the metal tab, supporting sustained high-current operation with an external heatsink.
Typical applications include synchronous-rectifier secondary-side switches in 48 V telecom and server bus converters, motor-drive half-bridges in 24-48 V brushless DC systems, solenoid and relay drivers in industrial automation, and uninterruptible power supply (UPS) inverter stages where the 150 V rating provides ample margin across 24 V and 48 V bus rails.
When designing with the IPP200N15N3GXKSA1, ensure that the gate-drive voltage reaches at least 10 V for full enhancement, place a 10-100 nF ceramic bypass capacitor between gate and source near the IC to suppress ringing, and confirm that the heatsink thermal design keeps Tj below 175 C under worst-case SOA conditions.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single reference for sourcing, second-sourcing, and qualifying the IPP200N15N3GXKSA1 in production designs.
Drop-in alternatives for IPP200N15N3GXKSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPP200N15N3GXKSA1 (same form factor and footprint) β differing in Package, Technology, RoHS Status.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPP200N15N3G
β Drop-Inπ Reference alternative (not in catalog)
IPI200N15N3GXKSA1
β Drop-Inπ Reference alternative (not in catalog)
IPB108N15N3G
β Drop-Inπ Reference alternative (not in catalog)
IPP075N15N3GXKSA1
β Drop-Inβ In Stock
$1.92 / Unit
View Datasheet βIPP530N15N3GXKSA1
β Drop-Inπ Reference alternative (not in catalog)
IPP147N12N3GXKSA1
β Drop-Inβ In Stock
$1.62 / Unit
View Datasheet βIPP200N15N3GXKSA1 Maximum Ratings & Electrical Characteristics
| Drain-Source Voltage (VDS max) | 150 V |
| Continuous Drain Current (ID max, Tc) | 50 A |
| Static Drain-Source On-Resistance (RDS(on) max) | 20 mOhm at VGS = 10 V |
| Total Power Dissipation (Ptot max, Tc=25C) | 150 W |
| Technology | OptiMOS 3 |
| Channel Type | N-Channel |
| Package | TO-220-3 (PG-TO220-3), through-hole |
| Operating Junction Temperature Range | -55 C to +175 C |
| Mounting Type | Through Hole |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| MSL Level | Not Applicable (through-hole) |
IPP200N15N3GXKSA1 Pin Configuration
| Pin 1 | Gate β Gate control input; drive to 10V for full enhancement |
| Pin 2 | Drain β Drain terminal (also electrically connected to the metal mounting tab) |
| Pin 3 | Source β Source terminal (circuit return path for load) |
Safe Operating Area (DC, TC=25C)
Typical Applications
IPP200N15N3GXKSA1 is suitable for 6 applications: 48V Telecom and Server Bus Converter, Brushless DC Motor Drive Half-Bridge, Solenoid and Relay Driver in Industrial Automation, Uninterruptible Power Supply (UPS) Inverter Stage, Automotive 48V Mild-Hybrid Power Distribution, Solar Inverter DC-DC Boost Stage.
48V Telecom and Server Bus Converter
The IPP200N15N3GXKSA1 fits 48V telecom and server bus converters as a synchronous-rectifier secondary-side switch. Its 150V VDS rating provides more than 3x safety margin above a 48V nominal bus, comfortably absorbing voltage spikes from leakage inductance and transformer reset transients. The 20mOhm maximum RDS(on) at VGS=10V keeps conduction loss low at high load currents - for example, at 30A continuous load the device dissipates approximately 18W, manageable on a moderate TO-220 heatsink. Compared with a Schottky diode rectifier, this MOSFET reduces rectifier losses by roughly 50 percent, directly improving converter efficiency and reducing thermal-management burden in power-dense server designs.
Recommended
Brushless DC Motor Drive Half-Bridge
In 24V to 48V brushless DC motor drive half-bridges, the IPP200N15N3GXKSA1 serves as the low-side or high-side switch in a three-phase inverter leg. The 150V rating tolerates back-EMF spikes from motor inductance during PWM switching transitions, and the 50A continuous rating covers most industrial BLDC motors up to approximately 2kW without paralleling devices. The OptiMOS 3 technology delivers low gate charge, enabling PWM frequencies up to 50-100 kHz with modest gate-drive losses, while the avalanche-rated body diode handles inductive dead-time conduction. The TO-220 package mounts easily to a chassis-mounted heatsink for sustained torque output under stall conditions.
Recommended
Solenoid and Relay Driver in Industrial Automation
The IPP200N15N3GXKSA1 works well as a low-side switch for 24V and 48V industrial solenoids, relays, and hydraulic valves. With 50A peak handling and 20mOhm RDS(on), it can switch inductive loads at high current while keeping the switch saturated well below 1V VDS, minimizing heat in dense control cabinets. The avalanche-rated body diode clamps the inductive kickback when the solenoid de-energizes, eliminating the need for an external flyback diode in many designs. The TO-220 through-hole package is mechanically robust for industrial vibration environments and easy to heatsink on the same chassis as the PLC or relay board.
Recommended
Uninterruptible Power Supply (UPS) Inverter Stage
In a UPS inverter stage converting 48V battery to 230V AC mains, the IPP200N15N3GXKSA1 is well-suited for the low-voltage side of a push-pull or full-bridge topology driving a step-up transformer. The 150V VDS rating comfortably handles the reflected load plus ringing from transformer leakage inductance, while 50A peak current supports 2-3 kVA UPS designs. The OptiMOS 3 low FOM (RDS(on) x Qg) reduces switching losses at the 20-50 kHz operating frequency typical of UPS designs, improving overall inverter efficiency by several percentage points versus older planar MOSFETs and directly extending battery runtime during grid outages.
Recommended
Automotive 48V Mild-Hybrid Power Distribution
The IPP200N15N3GXKSA1's 150V VDS rating and 50A continuous current make it a candidate for non-safety-critical switching in 48V mild-hybrid vehicle electrical systems, such as auxiliary power distribution, DC-DC converter secondary switches, and electronic limited-slip differential controls. While this part is not AEC-Q100 qualified (Infineon offers AEC-qualified automotive variants separately), the underlying OptiMOS 3 technology has proven reliability in harsh automotive environments. Engineers targeting production automotive designs should source the AEC-Q100 qualified sibling part for full traceability and qualification evidence.
Recommended
Solar Inverter DC-DC Boost Stage
In solar inverter DC-DC boost stages stepping up panel voltage to a 400V DC link, the IPP200N15N3GXKSA1 can serve as the boost switch in residential string inverters rated up to approximately 2-3 kW per channel. The 150V VDS rating handles typical residential PV open-circuit voltages of 40-50V with substantial transient margin, and the 50A rating supports full-load currents at the boost inductor input. The low RDS(on) at 20mOhm keeps conduction losses below 25W at typical boost currents, simplifying thermal design of the inverter enclosure. For higher-power commercial inverters, paralleled devices or the higher-current IPP530N15N3GXKSA1 are recommended.
Recommended
Recommended Products Summary
Engineering reference data for IPP200N15N3GXKSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPP200N15N3G | IPI200N15N3GXKSA1 | IPB108N15N3G | IPP075N15N3GXKSA1 | IPP530N15N3GXKSA1 | IPP147N12N3GXKSA1 |
|---|---|---|---|---|---|---|---|
| Package | TO-220-3 (PG-TO220-3) | TO-220-3 (PG-TO220-3) - same | TO-220-3 (PG-TO220-3) - same | TO-220-3 (PG-TO220-3) - same | TO-220-3 (PG-TO220-3) - same | TO-220-3 (PG-TO220-3) - same | TO-220-3 (PG-TO220-3) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS max) | 150 V | 150 V | 150 V | 150 V | 150 V | 150 V | 120 V |
| Continuous Drain Current (ID max) | 50 A | 50 A | 83 A | 45 A | 100 A | 100 A | 55 A |
| Technology | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
Key Differentiators
- Industry-leading OptiMOS 3 figure-of-merit at 150V (vs IPB108N15N3G)
- Balanced 50A current and 20mOhm RDS(on) at cost-optimized price (vs IPP075N15N3GXKSA1)
- Same TO-220-3 footprint as lower-voltage IPP147N12N3GXKSA1 (vs IPP147N12N3GXKSA1)
Design Notes
At 30A continuous load and 50mOhm total circuit resistance dominated by the 20mOhm RDS(on) of the IPP200N15N3GXKSA1, conduction loss is approximately 18W (estimated: ID^2 x RDS(on) = 30^2 x 0.020 = 18W). With a TO-220 junction-to-case thermal resistance near 1 C/W and a modest heatsink of 5 C/W junction-to-ambient, the junction temperature rises about 108C above ambient. To stay below the 175C maximum, ambient should not exceed 67C. Designers targeting higher continuous current must increase heatsink area or use the higher-current IPP530N15N3GXKSA1 in the same package.
Mount the IPP200N15N3GXKSA1 with the metal tab flat against a copper pour of at least 1 square inch per ampere of continuous load. Use a 4-40 or M3 screw with thermal compound (5-10 W/mK conductivity) between tab and heatsink, torqued to 0.5-0.7 N-m to avoid tab cracking. For through-hole TO-220 leads, use plated through-holes with at least 1.6mm drill and keep a 2mm clearance between leads and the copper tab pour to prevent solder wicking under the device body.
Place a 10-100 nF ceramic bypass capacitor directly between the Gate and Source pins of the IPP200N15N3GXKSA1, within 5mm of the leads, to suppress gate ringing from the parasitic inductance of the gate-drive loop. Keep the gate-drive loop area under 1 square centimeter to minimize ringing amplitude. Use a gate-drive resistor of 10-47 ohm in series to control the switching dV/dt and prevent spurious turn-on from Miller coupling, especially in half-bridge configurations where the source pin swings rapidly.
Do not drive the IPP200N15N3GXKSA1 with a gate voltage below 8V, as the RDS(on) specification is defined at 10V and falls rapidly below 8V, causing unexpectedly high conduction loss. Avoid operating the body diode in continuous conduction above its rated current for extended periods - the reverse-recovery charge can cause significant switching loss in synchronous-rectifier topologies; always add adequate dead-time in the gate-drive signal. Finally, do not exceed the SOA boundary, especially at high VDS and high ID simultaneously, where the DC curve drops sharply above 30V.
Compliance Information
RoHS compliant and lead-free per Infineon product declaration. Not AEC-Q100 qualified - for automotive applications use the AEC-Q100 qualified variant. REACH, halogen-free, and conflict-minerals status not specified in available data and should be confirmed via the manufacturer compliance certificate.
