IPT017N12NM6ATMA1 vs ISC037N12NM6ATMA1 Comparison
Detailed side-by-side comparison of IPT017N12NM6ATMA1 by Infineon and ISC037N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT017N12NM6ATMA1
IPT017N12NM6ATMA1 - 120V 331A OptiMOS 6 N-MOSFET | Infineon
IPT017N12NM6ATMA1 β ActiveInfineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IPT017N12NM6ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.85 | $3.62 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IPT017N12NM6ATMA1 | β |
| Technology | OptiMOS 6 | OptiMOS 6 (N-channel trench MOSFET) |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 120 V | β |
| Continuous Drain Current (ID) at Ta | 29 A | β |
| Continuous Drain Current (ID) at Tc | 331 A | β |
| On-Resistance RDS(on) max | 1.7 mOhm | β |
| Power Dissipation at Ta | 3 W | 3 W |
| Power Dissipation at Tc | 395 W | 214 W |
| Package | PG-HSOF-8 (TOLL) | PG-TDSON-8 FL (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +175C | β |
| Pin Count | 8 + tab | β |
| Packaging | Tape & Reel | β |
| RoHS Status | Compliant | Compliant |
| Drain-Source Voltage (Vds) | β | 120 V |
| Continuous Drain Current (Id) at Ta=25C | β | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | β | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | β | 3.7 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | β | [DATA_NEEDED: Qg total] |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Avalanche Energy Rated | β | Yes (single-pulse) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |