ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
MPN: ISC037N12NM6ATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $5.665 | $5.67 |
| 10 | $5.1 | $51.00 |
| 100 | $4.45 | $445.00 |
| 500 | $3.95 | $1,975.00 |
| 1,000 | $3.62 | $3,620.00 |
ISC037N12NM6ATMA1 Overview
What is an N-channel MOSFET? An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch whose majority carriers are electrons. Housed in the power-management hierarchy between discrete transistors and power management ICs, MOSFETs are the fundamental building blocks of synchronous buck converters, motor drives, and battery-protection switches. The OptiMOS 6 family is Infineon's latest-generation trench MOSFET technology optimized for low Rds(on) x Qg figure-of-merit, which directly translates to lower switching losses at high frequencies.
Key features include a 120 V drain-source breakdown voltage, 3.7 mOhm typical Rds(on) at Vgs=10 V, gate charge optimized for fast switching, and integrated protection through avalanche-rated single-pulse robustness. The PG-TDSON-8 FL package exposes a thermal pad to the PCB, enabling direct heat extraction into copper pours and keeping junction temperatures within safe limits under continuous operation.
The OptiMOS 6 technology uses a refined trench cell structure with a thin epitaxial layer to balance Rds(on) and switching charge. Compared with previous-generation OptiMOS 5, this part typically achieves 20-30% lower Rds(on) at the same die size, enabling higher power density designs without increasing PCB footprint. The low gate charge also reduces driver losses, which becomes significant in high-frequency telecom and solar applications.
Typical applications include 48 V telecom point-of-load converters, solar micro-inverters and optimizers, brushless DC motor drives for power tools, e-bike controllers, high-current battery protection circuits, and synchronous rectification in server and industrial SMPS. The wide safe operating area also supports hot-swap and OR-ing functions in 48 V distribution.
When designing with this part, observe the SOA in the datasheet for pulsed currents above 50 A. Place the gate driver within 20 mm of the gate pin to minimize parasitic inductance, and use Kelvin-source connection (pin 2) where possible to suppress source-inductance-induced gate-oscillation. A small RC snubber (10 ohm + 1 nF) across drain-source may be required for hard-switched topologies.
This page synthesizes distributor pricing, drop-in alternatives within the PG-TDSON-8 family, and practical design notes not found in the manufacturer datasheet. Information gain: side-by-side comparison with Infineon OptiMOS 5 and competing N-channel MOSFETs from onsemi and Vishay.
Drop-in alternatives for ISC037N12NM6ATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISC037N12NM6ATMA1 (same form factor and footprint) β differing in Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Mounting Type.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
ISC045N12NM6ATMA1
β Drop-Inπ Reference alternative (not in catalog)
IPT017N12NM6ATMA1
β Drop-Inβ In Stock
$1.85 / Unit
View Datasheet βIPTG025N15NM6ATMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$1.52 / Unit
View Datasheet βBSC014NE2LSIATMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$0.48 / Unit
View Datasheet βISC037N12NM6ATMA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS 6 (N-channel trench MOSFET) |
| Drain-Source Voltage (Vds) | 120 V |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm |
| Power Dissipation at Ta | 3 W |
| Power Dissipation at Tc | 214 W |
| Package | PG-TDSON-8 FL (SuperSO8) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) |
| RoHS Status | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) |
| MSL Level | 1 (per JEDEC J-STD-020) |
ISC037N12NM6ATMA1 Pin Configuration
| Pin 1 | Source β Source connection (low-side return) |
| Pin 2 | Kelvin Source β Kelvin source for gate driver return, suppresses source inductance |
| Pin 3 | Source β Source connection |
| Pin 4 | Gate β MOSFET gate drive input |
| Pin 5 | Drain β Drain connection, bonded to exposed pad |
| Pin 6 | Drain β Drain connection, bonded to exposed pad |
| Pin 7 | Drain β Drain connection, bonded to exposed pad |
| Pin 8 | Drain β Drain connection, bonded to exposed pad |
ISC037N12NM6ATMA1 Safe Operating Area
Typical Applications
ISC037N12NM6ATMA1 is suitable for 6 applications: 48V Telecom Synchronous Buck Converter, Solar Micro-Inverter Power Stage, Brushless DC Motor Drive (Power Tools), E-Bike / E-Scooter Controller, Server & Industrial SMPS Synchronous Rectification, Battery Protection & Hot-Swap OR-ing.
48V Telecom Synchronous Buck Converter
The ISC037N12NM6ATMA1's 3.7 mOhm Rds(on) at Vgs=10V and 120V Vds rating make it a strong choice for 48V telecom point-of-load synchronous buck converters. Placed in the low-side synchronous rectifier position, conduction losses at 10A output are approximately 0.37W per switch, allowing air-cooled operation without a heatsink. The OptiMOS 6 process minimizes gate charge, reducing driver losses at the 200-500 kHz switching frequencies typical of modern telecom POL designs. Pin 2 (Kelvin source) should be routed directly to the gate driver GND to suppress source-inductance-induced gate oscillation at high di/dt.
Recommended
Solar Micro-Inverter Power Stage
In solar micro-inverter and optimizer power stages, the ISC037N12NM6ATMA1 serves as the main switching element on the 60V DC bus side. Its 120V Vds rating provides ample headroom for transient spikes from reflected transformer energy and grid-side disturbances. The 3.7 mOhm Rds(on) keeps full-load efficiency above 97% in a 600W micro-inverter design. The PG-TDSON-8 FL package enables direct PCB thermal management through the exposed pad, supporting continuous operation at 15A without external heatsinking in well-ventilated outdoor enclosures.
Recommended
Brushless DC Motor Drive (Power Tools)
The ISC037N12NM6ATMA1 is well suited for the three-phase inverter stage of 36V-72V brushless DC motor drives in cordless power tools. Its 19.2A continuous drain current rating (at Ta=25C) supports 1-2kW motor power levels with appropriate thermal management. The low Rds(on) directly translates to longer battery runtime per charge - a critical user-facing metric for cordless tools. The OptiMOS 6 technology's avalanche ruggedness handles the regenerative braking energy dump that occurs when the motor decelerates abruptly under load.
Recommended
E-Bike / E-Scooter Controller
For 48V-72V e-bike and e-scooter motor controllers, the ISC037N12NM6ATMA1 provides an optimal balance of voltage rating, current handling, and cost. The 120V Vds comfortably handles 72V battery packs with full regen-braking transients. The 3.7 mOhm Rds(on) keeps controller losses below 15W at 750W peak power, enabling compact, fan-less enclosure designs. The PG-TDSON-8 FL package is drop-in compatible with the previous-generation OptiMOS 5 footprints, allowing direct PCB reuse for design upgrades.
Recommended
Server & Industrial SMPS Synchronous Rectification
In server and industrial SMPS secondary-side synchronous rectification, the ISC037N12NM6ATMA1 replaces Schottky diodes with significantly lower forward-voltage drop. At 20A output current the conduction loss is approximately 1.5W versus 10-15W in a comparable Schottky, raising efficiency by 1-2% at full load. The 120V rating handles 48V nominal bus voltages with transients above 60V, while the low Qg keeps switching losses minimal at 100-300 kHz SMPS frequencies. Direct PCB cooling through the exposed thermal pad supports continuous duty operation.
Recommended
Battery Protection & Hot-Swap OR-ing
The ISC037N12NM6ATMA1 serves as the protection MOSFET in 48V battery protection circuits and in hot-swap OR-ing controllers. Its low Rds(on) of 3.7 mOhm minimizes voltage drop across the protection element - critical in battery applications where every milliohm reduces usable capacity. The 120V Vds rating covers battery packs up to 96V nominal, and the OptiMOS 6 avalanche rating absorbs the inductive kickback when the protection FET turns off under fault conditions. Use as a back-to-back pair for full battery isolation.
Recommended
Recommended Products Summary
Engineering reference data for ISC037N12NM6ATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC045N12NM6ATMA1 | IPT017N12NM6ATMA1 | IPTG025N15NM6ATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 FL (SuperSO8) | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same |
| Drain-Source Voltage (Vds) | 120 V | 120 V | 120 V | 150 V | 25 V |
| On-Resistance Rds(on) at Vgs=10V | 3.7 mOhm | 4.5 mOhm | 1.7 mOhm | 2.5 mOhm | 1.4 mOhm |
| Technology Generation | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 |
| Avalanche Energy Rated | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lower Rds(on) at same die size versus OptiMOS 5 (vs BSC014NE2LSIATMA1 (OptiMOS 5 25V))
- Higher voltage rating than 25V OptiMOS 5 parts in same footprint (vs BSC014NE2LSIATMA1)
- Better cost-per-ampere than lower-Rds(on) OptiMOS 6 (vs IPT017N12NM6ATMA1 (1.7 mOhm))
Design Notes
Estimated: at continuous Id=15A, conduction loss = I^2 x Rds(on) = 225 x 0.0037 = 0.83W per FET. With PG-TDSON-8 FL theta_JA of approximately 35 C/W on a 1oz copper 4-layer board (1 sq inch copper pour), the junction temperature rise above ambient is 0.83W x 35 C/W = ~29C. At 70C ambient, Tj = 99C, well below the 175C max. Reduce Id by 0.10 A per degree Celsius above 25C ambient. For continuous operation above 20A, add a thermal via array under the exposed pad to the opposite copper layer.
Use Kelvin-source connection (pin 2) for the gate driver return path. Route the gate-drive trace as a tightly-coupled pair over pin 2-4 to minimize loop inductance. Place a 10 ohm gate-source resistor to dampen parasitic oscillations and a small RC snubber (10 ohm + 1 nF) across drain-source for hard-switched topologies above 100 kHz. Keep the power-loop (drain to source) area minimal to reduce EMI and voltage overshoot.
Do not exceed the pulsed drain current of 163 A even for short durations - the SOA curves in the datasheet define the safe boundary. Verify gate-drive voltage stays above 10V for full Rds(on) enhancement; below 6V the MOSFET operates in linear region with drastically increased losses. The exposed thermal pad must be soldered to a sufficient copper pour - dry solder joints here cause immediate thermal failure under load.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified; refer to Infineon automotive-grade OptiMOS 6 variants for AEC-Q100 requirements.
