IPTC017N12NM6ATMA1 vs ISC037N12NM6ATMA1 Comparison

Detailed side-by-side comparison of IPTC017N12NM6ATMA1 by Infineon and ISC037N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC037N12NM6ATMA1 ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 βœ“ Active

Specification Comparison

Parameter IPTC017N12NM6ATMA1 ISC037N12NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.95 $3.62
Technology OptiMOS 6, N-channel trench MOSFET OptiMOS 6 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 120 V β€”
Continuous Drain Current (ID, Ta) 32 A β€”
Continuous Drain Current (ID, Tc) 331 A β€”
On-State Resistance RDS(on) max 1.7 mΞ© at VGS = 10 V β€”
Gate-Source Threshold VGS(th) 2.4 V (typ) β€”
Total Gate Charge QG 141 nC at VGS = 10 V β€”
Input Capacitance Ciss 2.4 nF at VDS = 60 V β€”
Output Capacitance Coss 11000 pF at VDS = 60 V β€”
Power Dissipation (Ta) 3.8 W β€”
Power Dissipation (Tc) 395 W β€”
Package PG-HDSOP-16 (Surface Mount) PG-TDSON-8 FL (SuperSO8)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 Β°C to +175 Β°C (TJ max) β€”
Gate Drive Voltage (recommended) 10 V β€”
RoHS Status Compliant Compliant
Drain-Source Voltage (Vds) β€” 120 V
Continuous Drain Current (Id) at Ta=25C β€” 19.2 A
Pulsed Drain Current (Idm) at Tc β€” 163 A
On-Resistance Rds(on) typ at Vgs=10V β€” 3.7 mOhm
Power Dissipation at Ta β€” 3 W
Power Dissipation at Tc β€” 214 W
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) value]
Gate Charge (Qg) typ β€” [DATA_NEEDED: Qg total]
Operating Temperature Range β€” -55C to +175C (junction)
Avalanche Energy Rated β€” Yes (single-pulse)
MSL Level β€” 1 (per JEDEC J-STD-020)

Datasheets & Resources

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