IPW60R080P7XKSA1 vs IPA60R190C6XKSA1 Comparison

Detailed side-by-side comparison of IPW60R080P7XKSA1 by Infineon and IPA60R190C6XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPW60R080P7XKSA1 IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon

IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon

IPW60R080P7XKSA1 βœ“ Active
Infineon
IPA60R190C6XKSA1 IPA60R190C6XKSA1 - 600V 20.2A CoolMOS C6 N-MOSFET | Infineon

IPA60R190C6XKSA1 - 600V 20.2A CoolMOS C6 N-MOSFET | Infineon

IPA60R190C6XKSA1 βœ“ Active

Specification Comparison

Parameter IPW60R080P7XKSA1 IPA60R190C6XKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.65 $1.18
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 CoolMOS C6
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc) 37 A β€”
Power Dissipation (PD, Tc) 129 W β€”
RDS(on) (typ) 69 mΞ© at VGS = 10 V β€”
Gate-Source Threshold Voltage (VGS(th)) 3.5 V (typ, per datasheet family) β€”
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] [DATA_NEEDED: Qg typ]
Rise Time / Fall Time (tr/tf) [DATA_NEEDED: tr/tf value] β€”
Operating Temperature Range -55 C to +150 C (junction) -55C to +150C
Package PG-TO247-3 (TO-247, 3-pin through-hole) PG-TO220-FP (TO-220 FullPAK, 3+tab)
Mounting Type Through Hole Through Hole
Packaging Tube (XKSA1 ordering suffix) β€”
RoHS Status Compliant Compliant
Continuous Drain Current (ID, Tc=25C) β€” 20.2 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD, Tc=25C) β€” 34 W
On-State Resistance (RDS(on)) β€” 190 mOhm at VGS=10V, ID=9.5A
Gate Threshold Voltage (VGS(th)) β€” 3.5 V
Tab Isolation β€” Fully isolated (4 kV)
Lead Free β€” Yes

Datasheets & Resources

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