IPW60R080P7XKSA1 vs IPW60R041C6FKSA1 Comparison

Detailed side-by-side comparison of IPW60R080P7XKSA1 by Infineon and IPW60R041C6FKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPW60R080P7XKSA1 IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon

IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon

IPW60R080P7XKSA1 βœ“ Active

Specification Comparison

Parameter IPW60R080P7XKSA1 IPW60R041C6FKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Nrnd
Stock Status In Stock In Stock
Unit Price (USD) $2.65 $5.40
Manufacturer Infineon Technologies β€”
Product Family CoolMOS P7 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc) 37 A β€”
Power Dissipation (PD, Tc) 129 W β€”
RDS(on) (typ) 69 mΞ© at VGS = 10 V β€”
Gate-Source Threshold Voltage (VGS(th)) 3.5 V (typ, per datasheet family) β€”
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] β€”
Rise Time / Fall Time (tr/tf) [DATA_NEEDED: tr/tf value] β€”
Operating Temperature Range -55 C to +150 C (junction) -55Β°C to +150Β°C
Package PG-TO247-3 (TO-247, 3-pin through-hole) PG-TO247-3-1 (TO-247-3)
Mounting Type Through Hole Through Hole
Packaging Tube (XKSA1 ordering suffix) β€”
RoHS Status Compliant Compliant
Technology β€” CoolMOSβ„’ C6 (Superjunction N-channel)
Continuous Drain Current (ID, Tc=25Β°C) β€” 77.5 A
Power Dissipation (PD, Tc=25Β°C) β€” 481 W
On-State Resistance (RDS(on)) β€” 41 mΞ© at VGS=10V
Gate-Source Voltage (VGS) max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” 2.5 V to 3.5 V typical
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]
Rise Time (tr) β€” [DATA_NEEDED: tr value]
Fall Time (tf) β€” [DATA_NEEDED: tf value]
MSL Level β€” Not Applicable (Through-hole)
Lead-Free β€” Yes

Datasheets & Resources

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