IQD009N06NM5ATMA1 vs ISC151N08NM6ATMA1 Comparison
Detailed side-by-side comparison of IQD009N06NM5ATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD009N06NM5ATMA1
IQD009N06NM5ATMA1 - 60V 0.9mΞ© N-Ch MOSFET PQFN5x6 | Infineon
IQD009N06NM5ATMA1 β ActiveInfineon
ISC151N08NM6ATMA1
ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8
ISC151N08NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQD009N06NM5ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.96 | $0.78 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (Ta) | 42 A | β |
| Continuous Drain Current (Tc) | 445 A | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 333 W | β |
| RDS(on) Maximum | 0.9 mΞ© @ VGS = 10 V | β |
| Package | PG-TSON-8-9 (PQFN 5x6) | PG-TDSON-8 FL |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (trench) | OptiMOS 6 |
| Operating Temperature | -55 Β°C to +175 Β°C | -55 Β°C to +175 Β°C |
| Gate Threshold (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | β |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (TA=25Β°C) | β | 9.2 A |
| Continuous Drain Current (TC=25Β°C) | β | 37 A |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 48 W |
| On-Resistance RDS(on) max | β | 15.1 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 3.5 V |
| Number of Pins | β | 8 |
| Channel Mode | β | Enhancement |