IQD009N06NM5ATMA1 - 60V 0.9mΩ N-Ch MOSFET PQFN5x6 | Infineon
MPN: IQD009N06NM5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.34 | $134.00 |
| 500 | $1.12 | $560.00 |
| 1,000 | $0.96 | $960.00 |
IQD009N06NM5ATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when the gate is biased above its threshold. The "N-channel" designation means conduction is by electrons, which gives higher mobility than P-channel equivalents and therefore lower RDS(on) for the same silicon area. N-channel MOSFETs in the 60 V class are the workhorse of synchronous buck converters, half-bridge motor drivers, and OR-ing switches in 12 V / 24 V / 48 V systems, sitting one level below IGBTs (used at higher voltages) and one level above load switches in the power-converter hierarchy.
The headline feature is its 0.9 mΩ maximum RDS(on) at VGS = 10 V, which keeps conduction loss to a minimum at high current. Combined with low gate charge, this enables high-frequency switching in SMPS topologies, reducing magnetic component size. The PG-TSON-8-9 PQFN package offers a low-profile 5 mm × 6 mm footprint with an exposed drain pad that doubles as the thermal dissipation path, suiting space-constrained designs such as point-of-load converters, eMobility controllers, and telecom bricks.
Typical applications include 48 V-to-low-voltage DC-DC stages in data-center and telecom power, BLDC motor drivers in e-bike and industrial pumps, battery protection in power tools, and OR-ing FETs in redundant supplies. In all these roles, low RDS(on) and small package footprint are the dominant selection criteria.
When designing with this part, ensure VGS is driven to at least 10 V for full RDS(on) performance and pay attention to PCB layout to minimize source-inductance ringing. A low-ESR ceramic bypass on the gate driver is critical to avoid false turn-on in half-bridge configurations.
This page synthesizes distributor pricing, drop-in alternatives in the same PQFN 5x6 footprint, and design notes not found on the manufacturer datasheet. Specifications below are drawn from the Infineon IQD009N06NM5 datasheet and current distributor listings as of 2026-09-15.
Drop-in alternatives for IQD009N06NM5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQD009N06NM5ATMA1 (same form factor and footprint) — differing in Package, Technology, Drain-Source Voltage (VDS), MSL Level, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISC015N06NM5ATMA1
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →IAUCN08S7L033ATMA1
✅ Drop-In✓ In Stock
$0.86 / Unit
View Datasheet →IQE050N08NM5CGATMA1
✅ Drop-In✓ In Stock
$1.75 / Unit
View Datasheet →ISC151N08NM6ATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →BSC019N04LSTATMA1
✅ Drop-In✓ In Stock
$1.21 / Unit
View Datasheet →VBGQA1602
✅ Drop-In📋 Reference alternative (not in catalog)
IQD009N06NM5ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (Ta) | 42 A |
| Continuous Drain Current (Tc) | 445 A |
| Power Dissipation (Ta) | 3 W |
| Power Dissipation (Tc) | 333 W |
| RDS(on) Maximum | 0.9 mΩ @ VGS = 10 V |
| Package | PG-TSON-8-9 (PQFN 5x6) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS 5 (trench) |
| Operating Temperature | -55 °C to +175 °C |
| RoHS Status | Compliant |
| MSL Level | MSL 1 (per JEDEC J-STD-020) |
IQD009N06NM5ATMA1 Pin Configuration
| Pin 1 | Source — Source connection 1 |
| Pin 2 | Source — Source connection 2 |
| Pin 3 | Source — Source connection 3 |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source connection 4 |
| Pin 6 | Source — Source connection 5 |
| Pin 7 | Source — Source connection 6 |
| Pin 8 | Kelvin Source — Kelvin source for gate-drive return |
| Pin PAD | Drain — Drain / thermal pad (exposed underside) |
Safe Operating Area (DC)
Typical Applications
IQD009N06NM5ATMA1 is suitable for 7 applications: 48 V Telecom DC-DC Synchronous Rectifier, BLDC Motor Drive Half-Bridge, Battery Protection / OR-ing in Power Tools, Hot-Swap / Inrush Limiter in 48 V Server Rails, Automotive 12 V / 24 V Load Switch, USB-PD / High-Current Sink Power Path, eMobility Controller Pre-Regulator.
48 V Telecom DC-DC Synchronous Rectifier
The IQD009N06NM5ATMA1 is well suited to the synchronous-rectifier (SR) position in 48 V-to-low-voltage isolated DC-DC bricks used in telecom and data-center power. Its 0.9 mΩ maximum RDS(on) at VGS = 10 V minimizes conduction loss at the 30-50 A load currents typical of 48 V intermediate-bus converters feeding 12 V or 5 V downstream rails, and the 60 V VDS rating provides 12 V of headroom above the 48 V nominal bus for transient tolerance. The PQFN 5x6 (PG-TSON-8-9) package keeps the loop inductance low and the board footprint small. Per the Infineon datasheet, this part is part of the OptiMOS 5 family targeted at 48 V SMPS applications as of 2026-09-15.
Recommended
BLDC Motor Drive Half-Bridge
The IQD009N06NM5ATMA1 functions as the high-side or low-side switch in a 3-phase BLDC motor-drive half-bridge for 24 V or 48 V bus systems used in e-bikes, industrial pumps, and small EVs. Its 42 A continuous drain current at ambient and 333 W power dissipation rating at case temperature handle the repetitive current peaks of trapezoidal or FOC commutation. The 0.9 mΩ RDS(on) keeps the I²R losses small, reducing heatsink requirements and improving battery runtime. The exposed-drain pad of the PQFN 5x6 package provides a low thermal-resistance path to inner PCB copper layers, suitable for fanless motor-control PCBs.
Recommended
Battery Protection / OR-ing in Power Tools
The IQD009N06NM5ATMA1 is suitable for the OR-ing and battery-protection function in 18-20 V cordless power-tool packs where high peak currents (up to 80-100 A during stall) demand a sub-milliohm switch. Its 0.9 mΩ RDS(on) minimizes voltage drop in the discharge path, preserving usable battery capacity, and the 60 V VDS rating provides headroom above the maximum 5S Li-ion stack voltage of 21 V plus inductive transients. The PQFN 5x6 footprint allows dense dual-MOSFET back-to-back layouts inside a battery pack housing. Infineon datasheet guidance lists this part as suitable for battery-management applications.
Recommended
Hot-Swap / Inrush Limiter in 48 V Server Rails
In 48 V server and telecom hot-swap applications, the IQD009N06NM5ATMA1 acts as the inrush-limiting and disconnect FET on a high-current 48 V distribution rail. Its 60 V VDS rating gives 12 V of margin above the 48 V nominal bus for hot-plug transients, and its 0.9 mΩ RDS(on) ensures that, once the FET is fully enhanced, the IR drop across it at 50 A steady load is only about 45 mV, minimizing dissipation. The PQFN 5x6 footprint integrates the SOA-critical thermal path directly into the PCB, avoiding the need for a TO-220 or D2PAK package in the dense backplane environment. The Infineon datasheet recommends the part for 48 V hot-swap circuits as of 2026-09-15.
Recommended
Automotive 12 V / 24 V Load Switch
Although not AEC-Q101 qualified, the IQD009N06NM5ATMA1 is usable in non-safety automotive 12 V and 24 V load-switch applications such as body controllers, LED drivers, and auxiliary power outlets where its 0.9 mΩ RDS(on) minimizes steady-state losses. The 60 V VDS rating tolerates 24 V jump-start events (per ISO 7637-2) with sufficient margin. The PQFN 5x6 package is compatible with automated optical inspection and reflow processes used in automotive Tier-1 assembly lines. The Infineon datasheet describes the part as suitable for SMPS and drive applications across industrial and automotive voltage rails.
Recommended
USB-PD / High-Current Sink Power Path
The IQD009N06NM5ATMA1 can serve as the high-current power-path switch on the sink side of a USB-PD Extended Power Range (EPR) or a fixed 20 V / 5 A supply, where its 0.9 mΩ RDS(on) keeps full-load voltage drop below 50 mV and its 60 V VDS rating tolerates USB-PD 28 V, 36 V, and 48 V Extended Power Range fixed supplies coming from EPR-certified sources. The PQFN 5x6 package fits inside USB Type-C connector PCBs and the exposed pad provides thermal relief for continuous 5 A operation. Per Infineon datasheet, this part is in the 60 V low-RDS(on) class favored for compact high-current power-path designs.
Recommended
eMobility Controller Pre-Regulator
In eMobility controllers for e-bikes, e-scooters, and low-speed EVs, the IQD009N06NM5ATMA1 functions as the synchronous-rectifier or reverse-polarity protection FET on a 36 V or 48 V battery bus. Its 0.9 mΩ RDS(on) keeps the full-load conduction loss below 5 W at 30 A, and the 60 V VDS rating provides adequate margin for inductive kick during motor PWM switching. The PQFN 5x6 (PG-TSON-8-9) package allows a compact controller board layout with high PCB-side cooling. The Infineon IQD009N06NM5 datasheet lists drives and SMPS among the primary target use cases as of 2026-09-15.
Recommended
Recommended Products Summary
Engineering reference data for IQD009N06NM5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC015N06NM5ATMA1 | IAUCN08S7L033ATMA1 | IQE050N08NM5CGATMA1 | ISC151N08NM6ATMA1 | BSC019N04LSTATMA1 | VBGQA1602 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Diodes Incorporated |
| Package | PG-TSON-8-9 (PQFN 5x6) | PG-TSON-8-9 (PQFN 5x6) - same | PG-TSON-8-9 (PQFN 5x6) - same | PG-TSON-8-9 (PQFN 5x6) - same | PG-TSON-8-9 (PQFN 5x6) - same | PG-TSON-8-9 (PQFN 5x6) - same | DFN8 (5x6) / PQFN 5x6 - same |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 80 V | 80 V | 80 V | 40 V | 60 V |
| RDS(on) max @ VGS=10V | 0.9 mΩ | 1.5 mΩ | 3.3 mΩ | 5.0 mΩ | 1.5 mΩ | 1.9 mΩ | 1.27 mΩ |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (trench) | OptiMOS 7 (trench) | OptiMOS 5 (trench) | OptiMOS 6 (trench) | OptiMOS (trench) | Trench MOSFET |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Source | web_data | web_data | web_data | web_data | web_data | web_data | web_data |
Key Differentiators
- Sub-1 mΩ RDS(on) in PQFN 5x6 footprint (vs BSC019N04LSTATMA1)
- OptiMOS 5 trench technology with proven high-volume manufacturing (vs VBGQA1602)
- Wide safe operating area with high pulsed current capability (vs IAUCN08S7L033ATMA1)
Design Notes
Estimated: at continuous 42 A in a 60 V VDS application with VGS = 10 V and 25 °C ambient, conduction loss is P = I² × RDS(on) ≈ 42² × 0.0009 = 1.6 W. The 3 W Ta rating implies the 31 °C/W θJA on a JEDEC 1sq-in 2-oz test board is adequate for continuous operation at full Ta rating, but derate to 25-30 A in real layouts with smaller copper. Mount the package with a continuous copper pour under the exposed pad and thermal vias (≥ 4 vias of 0.3 mm drill) to inner layers for higher steady-state current. Source: Infineon IQD009N06NM5 datasheet (2026-09-15).
Layout-driven source inductance is the dominant cause of MOSFET failure in half-bridge applications. Keep the gate-drive loop (gate to gate-driver to Kelvin-source pin 8) physically separate from the power loop (drain to source) and minimize the gate-loop area to under 0.5 sq-cm. Use 1-oz or 2-oz copper on the top layer for high-current paths and stitch the return plane with at least four 0.3 mm thermal vias per MOSFET. Per Infineon PG-TSON-8-9 land-pattern guidance, the exposed pad must be soldered for both electrical and thermal performance. Source: Infineon IQD009N06NM5 datasheet, JEDEC JESD51-3 test board (2026-09-15).
Do not assume that 42 A (Ta) is achievable in production; the Ta figure assumes the JEDEC EIA/JESD51 test board, not a real product layout. For long-term reliability, design for 50-60% of the Ta rating. Avoid using the IQD009N06NM5ATMA1 above 48 V continuous; inductive transients in motor and relay circuits can exceed 60 V during switching. Per Infineon datasheet, gate voltage must reach at least 10 V for the rated 0.9 mΩ RDS(on); partial enhancement at 6-8 V increases losses dramatically. Use a dedicated gate driver rather than a microcontroller GPIO. Source: Infineon IQD009N06NM5 datasheet (2026-09-15).
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100/AEC-Q101 qualified - the IQD009N06NM5ATMA1 is targeted at industrial and consumer SMPS / drives, not automotive safety applications. For AEC-Q101 requirements consult the IPD-series or specific Infineon automotive product folders.
