IQD063N15NM5SCATMA1 vs ISC037N12NM6ATMA1 Comparison
Detailed side-by-side comparison of IQD063N15NM5SCATMA1 by Infineon and ISC037N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD063N15NM5SCATMA1
IQD063N15NM5SCATMA1 - 150V 5.1mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
IQD063N15NM5SCATMA1 β ActiveInfineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQD063N15NM5SCATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.35 | $3.62 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOSβ’ 5 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 151 A | β |
| Continuous Drain Current (ID) at TA=25Β°C | 14.4 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-Resistance RDS(on) at VGS=10V | 5.1 mΞ© | β |
| On-Resistance RDS(on) at VGS=4.5V | 6.32 mΞ© (typ) | β |
| Gate-Source Threshold Voltage (VGS(th)) | 3.8 V (max) | β |
| Total Gate Charge (QG) at VGS=10V | 48 nC | β |
| Input Capacitance (Ciss) | 3.6 nF | β |
| Output Capacitance (Coss) | 900 pF | β |
| Reverse Transfer Capacitance (Crss) | 21 pF | β |
| Maximum Power Dissition (PD) at TC=25Β°C | 333 W | β |
| Maximum Power Dissition (PD) at TA=25Β°C | 3 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C | -55C to +175C (junction) |
| Package | PG-WHSON-8-U02 (WHSON-8 with exposed pad) | PG-TDSON-8 FL (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Technology | β | OptiMOS 6 (N-channel trench MOSFET) |
| Drain-Source Voltage (Vds) | β | 120 V |
| Continuous Drain Current (Id) at Ta=25C | β | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | β | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | β | 3.7 mOhm |
| Power Dissipation at Ta | β | 3 W |
| Power Dissipation at Tc | β | 214 W |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | β | [DATA_NEEDED: Qg total] |
| Avalanche Energy Rated | β | Yes (single-pulse) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |