IQDH35N03LM5SCATMA1 vs BSZ068N06NSATMA1 Comparison

Detailed side-by-side comparison of IQDH35N03LM5SCATMA1 by Infineon and BSZ068N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQDH35N03LM5SCATMA1

IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon

IQDH35N03LM5SCATMA1 βœ“ Active
Infineon
BSZ068N06NSATMA1

BSZ068N06NSATMA1 - 60V, 6.8mΞ© N-Channel OptiMOS 5 MOSFET | Infineon

BSZ068N06NSATMA1 βœ“ Active

Specification Comparison

Parameter IQDH35N03LM5SCATMA1 BSZ068N06NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.05 $0.62
Manufacturer Infineon Technologies β€”
Transistor Type N-Channel MOSFET β€”
Technology OptiMOS 5 (trench, shielded-gate) OptiMOS 5 (trench-gate)
Drain-Source Voltage (VDS) max 30 V β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Continuous Drain Current (ID) at Ta 66 A β€”
Pulsed Drain Current (IDM) at Tc 700 A β€”
On-State Resistance (RDS(on)) max 0.35 mOhm @ VGS=10V β€”
Power Dissipation (PD) at Ta 2.5 W β€”
Power Dissipation (PD) at Tc 278 W β€”
Package PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +175 C -55 Β°C to +150 Β°C
MSL Level 1 (unlimited) MSL1
RoHS Status Compliant β€”
Marking IQDH35N03LM5S β€”
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID, Tc) β€” 40 A
Continuous Drain Current (ID, Ta) β€” [DATA_NEEDED: ID at Ta]
On-Resistance RDS(on) max β€” 6.8 mΞ© @ VGS=10 V
Power Dissipation (Ta) β€” 2.1 W
Power Dissipation (Tc) β€” 46 W
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge Qg β€” [DATA_NEEDED: Qg typ]
RoHS / Halogen-Free β€” RoHS compliant, halogen-free

Datasheets & Resources

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