IQE008N03LM5CGATMA1 vs IQE036N08NM6CGATMA1 Comparison
Detailed side-by-side comparison of IQE008N03LM5CGATMA1 by Infineon and IQE036N08NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE008N03LM5CGATMA1
IQE008N03LM5CGATMA1 - 30V 253A OptiMOS 5 N-Channel MOSFET | Infineon
IQE008N03LM5CGATMA1 β ActiveInfineon
IQE036N08NM6CGATMA1
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE008N03LM5CGATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 6 |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta=25C | 27 A | β |
| Continuous Drain Current (ID) at Tc=25C | 253 A | β |
| On-Resistance (RDS(on)) at VGS=10V | 0.85 mOhm (typ) @ 20 A | β |
| Gate-Source Voltage (VGS) Max | +/-16 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | β |
| Total Gate Charge (Qg) at VGS=10V | 64 nC (typ) | β |
| Input Capacitance (Ciss) at VDS=15V | 5700 pF (typ) | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss typical] | β |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 89 W | β |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +175 C (junction, Tj) |
| Package | PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (compliant per Infineon product page) | β |
| AEC-Q100 Automotive | [DATA_NEEDED: AEC-Q100 qualification status] | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | β | 80 V |
| Gate-Source Voltage (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | β | 118 A |
| Continuous Drain Current (Id) at Ta | β | 16.7 A |
| Rds(on) max at Vgs=10V | β | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 3.5 V (max) |
| Power Dissipation at Tc | β | 125 W |
| Power Dissipation at Ta | β | 2.5 W |
| MSL Level | β | MSL1 (per JEDEC J-STD-020) |
| RoHS Status | β | Compliant |
| Technology | β | Trench MOSFET, OptiMOS 6 |
| Configuration | β | Single N-channel, Source-Down |