IQE008N03LM5CGATMA1 - 30V 253A OptiMOS 5 N-Channel MOSFET | Infineon
MPN: IQE008N03LM5CGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.89 | $890.00 |
| 3,000 | $0.74 | $2,220.00 |
IQE008N03LM5CGATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated-gate field-effect structure to modulate conduction between source and drain terminals. It belongs to the discrete semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor. Low-voltage MOSFETs such as this OptiMOS 5 part are widely used as synchronous rectification switches and buck/boost converter high-side or low-side elements, where their gate-charge and on-resistance determine switching and conduction losses respectively.
The IQE008N03LM5CGATMA1 leverages Infineon's OptiMOS 5 technology platform to achieve an extremely low figure of merit (FOM = RDS(on) x QG), targeting high-frequency, high-current-density applications. Its ±16 V VGS rating gives strong margin against typical 10 V driver rails. The combination of 0.85 mOhm on-resistance and 89 W power dissipation supports very high pulse currents, making the device suitable for hot-swap and e-fuse circuits where the MOSFET must absorb inrush energy without latch-up.
Typical applications include synchronous rectification in 12 V buck converters for server and telecom point-of-load (POL) rails, hot-swap controllers on 12 V backplanes, battery management system (BMS) protection in 1-4S Li-ion packs, USB-PD power delivery switching, motor drive H-bridges in 12-24 V systems, and automotive ECU load switches. The low on-resistance minimizes conduction loss while the small PG-TTFN-9-1 footprint maximizes power density.
Designers should ensure adequate copper pour (at least 100 mm^2) under the exposed pad to achieve rated 89 W power dissipation, and gate-drive resistors in the 2-10 ohm range to suppress ringing. Per the manufacturer datasheet, all ratings assume case temperature held at the specified value; de-rating is required based on actual PCB thermal performance. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IQE008N03LM5CGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQE008N03LM5CGATMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, Technology, Drain-Source Voltage (VDS), Product Family.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IQE012N03LM5CGATMA1
✅ Drop-In✓ In Stock
$1.38 / Unit
View Datasheet →IQE050N08NM5CGATMA1
✅ Drop-In✓ In Stock
$1.75 / Unit
View Datasheet →IQE018N06NM6CGATMA1
✅ Drop-In✓ In Stock
$1.21 / Unit
View Datasheet →IQE036N08NM6CGATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →ISC045N03L5SATMA1
✅ Drop-In✓ In Stock
$0.51 / Unit
View Datasheet →BSC019N04LSTATMA1
✅ Drop-In✓ In Stock
$1.21 / Unit
View Datasheet →IQE008N03LM5CGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 27 A |
| Continuous Drain Current (ID) at Tc=25C | 253 A |
| On-Resistance (RDS(on)) at VGS=10V | 0.85 mOhm (typ) @ 20 A |
| Gate-Source Voltage (VGS) Max | +/-16 V |
| Total Gate Charge (Qg) at VGS=10V | 64 nC (typ) |
| Input Capacitance (Ciss) at VDS=15V | 5700 pF (typ) |
| Power Dissipation (PD) at Ta=25C | 2.1 W |
| Power Dissipation (PD) at Tc=25C | 89 W |
| Operating Temperature Range | -55C to +150C (junction) |
| Package | PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks |
| Mounting Type | Surface Mount |
| Lead-Free / RoHS | Yes (compliant per Infineon product page) |
IQE008N03LM5CGATMA1 Pin Configuration
| Pin 1 | GATE — Gate input - drive with 10V typical; +/-16V VGS max |
| Pin 2 | DRAIN — Drain terminal - high current path |
| Pin 3 | DRAIN — Drain terminal - high current path |
| Pin 4 | DRAIN — Drain terminal - high current path |
| Pin 5 | SOURCE — Source terminal - low-side return |
| Pin 6 | SOURCE — Source terminal - low-side return |
| Pin 7 | SOURCE — Source terminal - low-side return |
| Pin 8 | SOURCE — Source terminal - low-side return |
| Pin 9 | SOURCE — Source terminal - low-side return |
| Pin PAD | DRAIN (Exposed Pad) — Drain terminal - thermal pad, must be soldered for rated performance |
Safe Operating Area (DC)
Typical Applications
IQE008N03LM5CGATMA1 is suitable for 6 applications: 12V Synchronous Rectification, Hot-Swap / eFuse Controller Switch, 1-4S Li-Ion Battery Protection Switch, USB-PD Power Delivery Switching, Automotive 12V ECU Load Switch, Brushless DC Motor Drive H-Bridge.
12V Synchronous Rectification
The IQE008N03LM5CGATMA1's 0.85 mOhm RDS(on) and 64 nC gate charge make it ideal for the low-side synchronous MOSFET in 12 V buck converters for server and telecom point-of-load (POL) rails. At 20 A continuous drain current, conduction loss is only 0.34 W, and at 500 kHz switching frequency the gate-drive loss of approximately 32 mW contributes negligibly. The 30 V VDS rating provides ample margin over 12 V nominal with 16 V transient spikes per USB-PD specifications, and the small PG-TTFN-9-1 footprint allows high-density layouts of multi-phase VRMs.
Recommended
Hot-Swap / eFuse Controller Switch
In 12 V backplane hot-swap and e-fuse applications, the IQE008N03LM5CGATMA1 acts as the main load switch absorbing inrush current during board insertion. Its 253 A pulsed drain current at 25 C case provides enormous safe operating area (SOA) margin for transient short-circuit conditions during capacitor charging. The wettable-flank PG-TTFN-9-1 package enables AOI inspection on high-reliability server and storage backplanes, while the low RDS(on) keeps continuous conduction loss below 1 W at 30 A - critical for keeping the eFuse cool in confined 1U chassis.
Recommended
1-4S Li-Ion Battery Protection Switch
The IQE008N03LM5CGATMA1's ultra-low 0.85 mOhm RDS(on) makes it an ideal low-side protection MOSFET in 1-4S Li-ion battery management systems (BMS). At 10 A discharge current, conduction loss is only 85 mW - critical for preserving battery runtime in cordless power tools, e-bikes, and portable medical devices. The 30 V VDS rating provides adequate margin over the maximum 4S pack voltage of 16.8 V plus inductive transients during relay turn-off. Gate-charge of 64 nC enables fast short-circuit disconnect within 5 us, exceeding UL 2054 fault response requirements.
Recommended
USB-PD Power Delivery Switching
The IQE008N03LM5CGATMA1 serves as a high-current load switch in USB Power Delivery 3.1 applications where 28 V / 36 V / 48 V EPR (Extended Power Range) contracts require robust VBUS switching. Its 30 V VDS rating supports SPR (Standard Power Range) 20 V contracts with margin, while its 0.85 mOhm RDS(on) keeps conduction loss under 1.7 W at 45 A peak EPR current. The small PG-TTFN-9-1 footprint enables ultra-compact USB-PD dongle designs, and the 64 nC Qg is compatible with standard USB-PD controller PWM drivers operating at 100-300 kHz.
Recommended
Automotive 12V ECU Load Switch
In 12 V automotive body and chassis ECUs - body control modules, lighting drivers, and HVAC actuators - the IQE008N03LM5CGATMA1 functions as a high-side or low-side load switch handling 5-20 A continuous loads. Its 30 V VDS rating covers 12 V nominal with load-dump transients up to 35 V per ISO 16750-2. The wettable-flank PG-TTFN-9-1 package passes stringent automotive solder joint inspection, and the 89 W power dissipation capability supports high inrush loads like headlamp ballasts without thermal limiting. Confirm AEC-Q100 qualification status against the latest datasheet revision for production designs.
Recommended
Brushless DC Motor Drive H-Bridge
The IQE008N03LM5CGATMA1's combination of 0.85 mOhm RDS(on), 27 A continuous current, and 89 W power dissipation makes it ideal as the low-side switch in 12 V / 24 V brushless DC (BLDC) motor drive H-bridges. In a 3-phase bridge driving a 200 W spindle motor, each FET dissipates approximately 0.4 W at 10 A continuous phase current - easily handled without heatsinking. The 64 nC gate charge enables PWM frequencies up to 50 kHz for smooth torque control, while the wettable-flank package ensures reliability under high-vibration automotive and industrial environments.
Recommended
Recommended Products Summary
Engineering reference data for IQE008N03LM5CGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQE012N03LM5CGATMA1 | IQE050N08NM5CGATMA1 | BSC019N04LSTATMA1 | ISC045N03L5SATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TTFN-9-1 (8-PowerTDFN) | PG-TTFN-9-1 (8-PowerTDFN) - same | PG-TTFN-9-1 (8-PowerTDFN) - same | PG-TTFN-9-1 (8-PowerTDFN) - same | PG-TTFN-9-1 (8-PowerTDFN) - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 80 V | 40 V | 30 V |
| On-Resistance (RDS(on)) at 10V VGS | 0.85 mOhm | 1.2 mOhm | 5.0 mOhm | 1.9 mOhm | 0.45 mOhm |
| Continuous Drain Current (Ta=25C) | 27 A | 24 A | 12 A | 20 A | 30 A |
| Total Gate Charge (Qg) | 64 nC | 55 nC | 75 nC | 85 nC | 70 nC |
| Power Dissipation (Tc=25C) | 89 W | 83 W | 78 W | 75 W | 92 W |
| Wettable Flank (AOI Capable) | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lowest RDS(on) in 30V OptiMOS 5 PG-TTFN-9-1 family (vs IQE012N03LM5CGATMA1)
- Higher VDS rating for 24V industrial compatibility vs 30V OptiMOS parts (vs ISC045N03L5SATMA1)
- Wettable-flank package for AOI-compatible automotive/industrial assembly (vs BSC019N04LSTATMA1)
Design Notes
Estimated: At 20 A continuous conduction with the part in still air on a 4-layer FR4 PCB with 50 mm^2 copper pour under the exposed pad, junction-to-ambient thermal resistance is approximately 60 C/W. Steady-state power dissipation at 20 A is 0.85 mOhm * 20^2 = 0.34 W, giving a junction temperature rise of about 20 C above ambient. To achieve the rated 89 W at Tc=25C, the PCB must keep the case temperature pinned at 25C via a heatsink or large copper pour of at least 100 mm^2. For continuous >15 A operation, always design for case temperature monitoring via the source pin resistance.
Place at least four thermal vias (0.3 mm diameter, 1 mm pitch) directly under the PG-TTFN-9-1 exposed pad to conduct heat from the top copper layer to inner and bottom layers. The wettable-flank terminations require a rectangular PCB pad extension of approximately 0.3 mm beyond the package edge to ensure proper AOI inspection. Keep high-current drain and source traces short and wide (at least 2 mm wide per 5 A of current) to minimize parasitic inductance that can cause voltage spikes during switching transitions.
Do not exceed VGS of +/-16 V - gate oxide breakdown is permanent. Add a 10 kOhm gate-to-source resistor to prevent floating-gate turn-on during power-up sequencing. For 12 V applications, drive the gate with 10 V (not 12 V directly) to stay within VGS rating with margin. Always check the SOA curve at your specific VDS and ID operating point - the 27 A continuous rating assumes Ta=25C with specific PCB conditions per the datasheet Diagram 2.
Compliance Information
RoHS and lead-free compliance confirmed via Infineon product page. Wettable-flank terminations support AOI inspection per IPC-A-610. AEC-Q100 status requires datasheet verification for automotive production use.
