IQE008N03LM5CGSCATMA1 vs IQE008N03LM5SCATMA1 Comparison
Detailed side-by-side comparison of IQE008N03LM5CGSCATMA1 by Infineon and IQE008N03LM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE008N03LM5CGSCATMA1
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 β Active
Specification Comparison
| Parameter | IQE008N03LM5CGSCATMA1 | IQE008N03LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.10 | $1.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 5 |
| Configuration | Dual N-Channel MOSFET Array | Single N-Channel |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) | β |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | 2 V (typical) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg total] |
| Operating Temperature Range | -55C to +150C (junction) | -55 Β°C to +150 Β°C |
| Package | PG-WHTFN-9 (WHTFN) | PG-WHSON-8 (Source-Down) |
| Mounting Type | Surface Mount (top + bottom cooling) | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5) | Trench MOSFET (N-Channel) |
| Polarity | N-Channel | β |
| Number of Pins | 9 (WHTFN with exposed thermal pads) | β |
| MSL Level | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes (Infineon standard for OptiMOS 5) | β |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) | β | 252 A |
| On-Resistance (RDS(on)) max | β | 0.85 mΞ© at VGS = 10 V |
| Gate Drive Voltage | β | 10 V (recommended) |
| Cooling Architecture | β | Source-Down, dual-side cooling |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |