IQE008N03LM5CGSCATMA1 vs IQEH50NE2LM7UCGSCATMA1 Comparison
Detailed side-by-side comparison of IQE008N03LM5CGSCATMA1 by Infineon and IQEH50NE2LM7UCGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE008N03LM5CGSCATMA1
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 β ActiveInfineon
IQEH50NE2LM7UCGSCATMA1
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE008N03LM5CGSCATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.10 | $1.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 7 Power-Transistor |
| Configuration | Dual N-Channel MOSFET Array | β |
| Drain-Source Voltage (VDS) Max | 30 V | 25 V |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) | β |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Operating Temperature Range | -55C to +150C (junction) | β |
| Package | PG-WHTFN-9 (WHTFN) | PG-WHTFN-9-1 (surface mount) |
| Mounting Type | Surface Mount (top + bottom cooling) | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5) | Silicon N-Channel Power MOSFET |
| Polarity | N-Channel | β |
| Number of Pins | 9 (WHTFN with exposed thermal pads) | β |
| MSL Level | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) | β |
| RoHS Status | Compliant | β |
| Halogen-Free | Yes (Infineon standard for OptiMOS 5) | β |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | β | 54 A |
| Continuous Drain Current (ID) at TC | β | 422 A |
| RDS(on) Max | β | 0.5 mΞ© |
| Gate Threshold Voltage (VGS(th)) typ | β | 2 V |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 150 W |
| Maximum Junction Temperature | β | 175 Β°C |
| Series | β | OptiMOS 7 |