IQE013N04LM6ATMA1 vs IQE013N04LM6SCATMA1 Comparison
Detailed side-by-side comparison of IQE013N04LM6ATMA1 by Infineon and IQE013N04LM6SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE013N04LM6ATMA1
IQE013N04LM6ATMA1 - 40V 1.35mΞ© OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 β ActiveInfineon
IQE013N04LM6SCATMA1 - 40V 1.35mΞ© OptiMOS Source-Down MOSFET | Infineon
IQE013N04LM6SCATMA1 β ActiveSpecification Comparison
| Parameter | IQE013N04LM6ATMA1 | IQE013N04LM6SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $1.02 |
| Technology | OptiMOS N-channel trench MOSFET | OptiMOS (trench MOSFET) |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (Ta) | 31 A | β |
| Continuous Drain Current (Tc) | 205 A | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 107 W | β |
| On-Resistance RDS(on) max | [DATA_NEEDED: RDS(on) max value at VGS=10V] | β |
| On-Resistance RDS(on) typ | 1.35 mΞ© @ VGS=10 V, ID=20 A | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | β |
| Package | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down | PG-WHSON-8-1 (3.3 mm Γ 3.3 mm Source-Down PQFN) with exposed pad |
| Operating Temperature Range | -55 Β°C to +175 Β°C | [DATA_NEEDED: T_J min/max] |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Source-Down Topology | Yes (flip-chip die attach, drain on top thermal pad) | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 40 V |
| Gate-Source Voltage (V<sub>GS</sub>) | β | Β±20 V |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | β | 1.35 mΞ© |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 Β°C | β | 31 A |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 Β°C | β | [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed) |
| Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 Β°C | β | 205 A |
| Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 Β°C | β | 2.5 W |
| Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 Β°C | β | 107 W |
| Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V | β | 41 nC |
| Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V | β | 3800 pF |
| Packaging | β | Tape & Reel |
| Part Family | β | OptiMOS Source-Down, 40 V, 3.3Γ3.3 PQFN |