IQE020N04LM6CGSCATMA1 vs IQEH50NE2LM7UCGSCATMA1 Comparison
Detailed side-by-side comparison of IQE020N04LM6CGSCATMA1 by Infineon and IQEH50NE2LM7UCGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE020N04LM6CGSCATMA1
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΞ© N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 β ActiveInfineon
IQEH50NE2LM7UCGSCATMA1
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE020N04LM6CGSCATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.65 | $1.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 low-voltage power MOSFET | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current at TA=25Β°C | 25 A | β |
| Continuous Drain Current at TC=25Β°C | 166 A | β |
| Maximum RDS(on) | 2.0 mΞ© (per IQE part-number decode) | β |
| Power Dissipation at TA=25Β°C | 2.5 W | β |
| Power Dissipation at TC=25Β°C | 107 W | β |
| Package | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) | PG-WHTFN-9-1 (surface mount) |
| Pin Count | 9 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C (junction, per Infineon MOSFET convention) | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| MSL Level | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) | β |
| Technology | OptiMOS 6 trench | Silicon N-Channel Power MOSFET |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | β | 25 V |
| Continuous Drain Current (ID) at TA | β | 54 A |
| Continuous Drain Current (ID) at TC | β | 422 A |
| RDS(on) Max | β | 0.5 mΞ© |
| Gate Threshold Voltage (VGS(th)) typ | β | 2 V |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 150 W |
| Maximum Junction Temperature | β | 175 Β°C |
| Series | β | OptiMOS 7 |