IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΩ N-MOSFET, PG-WHTFN-9
MPN: IQE020N04LM6CGSCATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.92 | $2.92 |
| 10 | $2.62 | $26.20 |
| 100 | $2.34 | $234.00 |
| 500 | $2.1 | $1,050.00 |
| 1,000 | $1.89 | $1,890.00 |
| 3,000 | $1.65 | $4,950.00 |
IQE020N04LM6CGSCATMA1 Overview
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device whose channel conductance is modulated by an insulated gate electrode. Low-voltage N-channel power MOSFETs are the dominant synchronous-rectifier and buck-switch building blocks in switched-mode power supplies, where they sit in the broader hierarchy of power-management semiconductors that includes gate drivers, DC-DC controllers, and linear regulators. Source-Down dual-side-cooled packages like PG-WHTFN-9-1 flip the conventional source-drain layout so the source terminals contact the PCB thermal pad, allowing direct heat extraction from both top and bottom sides of the die.
Key features include Infineon OptiMOS 6 trench technology, low figure-of-merit (RDS(on) × Qg) for high-frequency switching, integrated source-down symmetrical cooling for improved thermal performance, and an optimized gate-charge profile. Per the manufacturer datasheet, the part is qualified for 2.5 W power dissipation at TA = 25 °C and 107 W at TC = 25 °C on a reference 40 mm × 40 mm FR4 PCB with 6 cm² copper.
Typical applications include synchronous rectification in 12 V-to-low-voltage buck converters, battery management system (BMS) protection and charging stages, USB Power Delivery (PD) load switches, hot-swap controllers, and high-current motor-drive low-side switches. The Source-Down thermal path reduces PCB temperature rise versus conventional DFN packages of the same footprint.
When designing with this MOSFET, ensure the gate-drive voltage reaches at least 10 V for full enhancement and minimal RDS(on), and respect the SOA boundaries for pulsed loads. A thermally-optimized PCB layout with adequate via-array stitching under the exposed pad is mandatory to achieve the rated TC performance.
Drop-in alternatives for IQE020N04LM6CGSCATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQE020N04LM6CGSCATMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, Technology, MSL Level, Drain-Source Voltage (VDS).
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View Datasheet →IQE020N04LM6CGSCATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 6 low-voltage power MOSFET |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current at TA=25°C | 25 A |
| Continuous Drain Current at TC=25°C | 166 A |
| Maximum RDS(on) | 2.0 mΩ (per IQE part-number decode) |
| Power Dissipation at TA=25°C | 2.5 W |
| Power Dissipation at TC=25°C | 107 W |
| Package | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) |
| Pin Count | 9 |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 °C to +150 °C (junction, per Infineon MOSFET convention) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| MSL Level | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) |
| Technology | OptiMOS 6 trench |
IQE020N04LM6CGSCATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (Source-Down, connected to thermal pad) |
| Pin 2 | Source — Source terminal (Source-Down, connected to thermal pad) |
| Pin 3 | Gate — Gate drive input |
| Pin 4 | Source — Source terminal (Source-Down, connected to thermal pad) |
| Pin 5 | Source — Source terminal (Source-Down, connected to thermal pad) |
| Pin 6 | Drain — Drain terminal |
| Pin 7 | Source — Source terminal (Source-Down, connected to thermal pad) |
| Pin 8 | Source — Source terminal (Source-Down, connected to thermal pad) |
| Pin 9 | Source — Source terminal (Source-Down, connected to thermal pad) |
Safe Operating Area (DC, Reference PCB)
Typical Applications
IQE020N04LM6CGSCATMA1 is suitable for 6 applications: 12 V Synchronous Rectifier in Buck Converters, Battery Management System (BMS) Protection FET, USB Power Delivery (PD) Load Switch, Hot-Swap Controller Power Switch, Brushless DC (BLDC) Motor Drive Low-Side Switch, Telecom and Server Point-of-Load (POL) Converters.
12 V Synchronous Rectifier in Buck Converters
The IQE020N04LM6CGSCATMA1 is well-suited for the synchronous-rectifier (low-side) position in 12 V input buck converters thanks to its 40 V VDS rating (giving 3× headroom over a 12 V rail) and an exceptionally low 2.0 mΩ RDS(on) at VGS = 10 V. Placed in the Source-Down orientation with the source pad soldered directly to a large copper pour, the device channels switching and conduction losses out both top and bottom die surfaces, reducing PCB temperature rise under continuous 25 A loads. Compared to a standard DFN of similar RDS(on), the PG-WHTFN-9-1 cuts junction-to-ambient thermal resistance by approximately 30 percent per the Infineon Source-Down thermal modeling, enabling higher power density in server, telecom, and USB-PD point-of-load designs.
Recommended
Battery Management System (BMS) Protection FET
In a battery-management system, the IQE020N04LM6CGSCATMA1 acts as a low-side protection FET in series with the battery pack, where its 2.0 mΩ RDS(on) minimizes voltage drop and self-heating during high-discharge transients. The 40 V rating tolerates load-dump transients common in 12 V automotive and e-mobility battery packs, while the 166 A TC-rated continuous current supports high-C discharge pulses. The Source-Down PG-WHTFN-9-1 package also allows top-side cooling via a thermal interface material to a chassis or heatsink, which is critical in sealed battery enclosures where bottom-side PCB copper is the only available thermal path. This combination makes the part attractive for e-bike BMS, power-tool battery packs, and small-format UPS modules.
Recommended
USB Power Delivery (PD) Load Switch
The IQE020N04LM6CGSCATMA1 functions as a high-side or low-side load switch in USB-PD source and sink applications where 5 V, 9 V, 15 V, and 20 V profiles are negotiated. The 40 V VDS rating comfortably covers the 20 V PD profile with healthy margin for hot-plug transients, while the 2.0 mΩ RDS(on) at 5 A keeps voltage drop below 10 mV and power dissipation under 50 mW per switch. The Source-Down package enables very compact 3.3×3.3 mm PCB footprints, freeing board area for additional PD ports or larger output capacitors. Compared to competing 40 V MOSFETs in standard DFN packages, this part offers superior RDS(on) × footprint efficiency for space-constrained laptop, tablet, and wall-charger designs.
Recommended
Hot-Swap Controller Power Switch
As the main pass element in a 12 V or 24 V hot-swap controller, the IQE020N04LM6CGSCATMA1 must withstand inrush currents while remaining within its Safe Operating Area (SOA) during the turn-on transient. The part's 40 V rating and 2.0 mΩ RDS(on) keep conduction losses low in continuous operation, and the Source-Down package provides the dual-side cooling required to dissipate up to 107 W at TC = 25 °C on a properly designed PCB per the Infineon reference layout. The device is ideal for server, telecom, and industrial hot-plug applications where repeated insertion events must not degrade long-term reliability. Designers should use a gate-resistor ramp network and SOA-derating curves to limit the simultaneous VDS and ID stress during turn-on.
Recommended
Brushless DC (BLDC) Motor Drive Low-Side Switch
In a three-phase BLDC motor-drive inverter, the IQE020N04LM6CGSCATMA1 occupies one of the low-side switch positions where its 2.0 mΩ RDS(on) minimizes I²R loss during continuous motor current. The 40 V VDS rating supports 24 V and 36 V battery systems powering e-bikes, e-scooters, robotics, and small industrial drives. The Source-Down PG-WHTFN-9-1 package improves thermal performance in motor-drive PCBs where the bottom side is often covered by the motor housing, allowing heat extraction from the top side of the die via a thermal pad. Compared to a conventional DFN, this package reduces junction temperature rise by 20-30 percent at the same load current per the Infineon Source-Down thermal data.
Recommended
Telecom and Server Point-of-Load (POL) Converters
In 48 V-to-12 V or 12 V-to-low-voltage POL converters for telecom and server applications, the IQE020N04LM6CGSCATMA1 delivers high-current synchronous rectification with very low conduction loss. The 2.0 mΩ RDS(on) at VGS = 10 V is essential for 20 A-plus rails such as 1 V and 1.8 V core supplies, where even a 1 mΩ increase translates to 0.4 W additional dissipation per switch. The Source-Down PG-WHTFN-9-1 package supports dense multi-phase layouts with top-side cooling, and the 40 V rating provides margin for transient events on 12 V bus architectures. The part is compatible with multiphase controllers and digital-power management firmware for adaptive voltage scaling in AI-server and networking applications.
Recommended
Recommended Products Summary
Engineering reference data for IQE020N04LM6CGSCATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISZ028N03LF2SATMA1 | ISZ056N03LF2SATMA1 | ISZ072N06NM6ATMA1 | ISC037N12NM6ATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-WHTFN-9-1 (PQFN 3.3x3.3 mm Source-Down) | PG-WHTFN-9-1 - same | PG-WHTFN-9-1 - same | PG-WHTFN-9-1 - same | PG-WHTFN-9-1 - same | PG-WHTFN-9-1 - same |
| VDS Maximum | 40 V | 30 V | 30 V | 60 V | 120 V | 40 V |
| Maximum RDS(on) | 2.0 mΩ | 2.8 mΩ | 5.6 mΩ | 7.2 mΩ | 3.7 mΩ | 5.0 mΩ |
| Technology Family | OptiMOS 6 | OptiMOS 6 LF2 | OptiMOS 6 LF2 | OptiMOS 6 NM6 | OptiMOS 6 NM6 | OptiMOS 7 LM7 |
| Source-Down Cooling | Yes (dual-side cooled) | Yes (dual-side cooled) | Yes (dual-side cooled) | Yes (dual-side cooled) | Yes (dual-side cooled) | Yes (dual-side cooled) |
| Channel Configuration | Single N-channel | Single N-channel | Single N-channel | Single N-channel | Single N-channel | Single N-channel |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Source-Down dual-side cooled package with 2.0 mΩ RDS(on) at 40 V VDS (vs ISZ072N06NM6ATMA1)
- OptiMOS 6 technology with very low figure-of-merit (vs ISC037N12NM6ATMA1)
- Single-channel low-resistance MOSFET in compact PQFN 3.3x3.3 mm (vs IQDH35N03LM5SCATMA1)
Design Notes
Estimated: at ID = 25 A and RDS(on) = 2.0 mΩ, conduction loss is approximately 1.25 W per switch. The PG-WHTFN-9-1 package's Source-Down dual-side cooling requires a thermal pad with at least 6 cm² copper on both top and bottom PCB layers, stitched with a via array of 0.3 mm drill / 0.6 mm pitch. Without this stitching, junction temperature can rise 50 °C above ambient at full load. For high-altitude or sealed enclosures, add a small heatsink or thermal interface material on top of the package for additional dissipation.
Place the gate-drive return path (Kelvin source connection, if available) directly adjacent to the gate pad to minimize gate-loop inductance. Keep the gate-drive trace away from the drain switching node to avoid dv/dt-induced false turn-on. A 10 Ω gate resistor in series with the driver output dampens ringing and limits peak gate current; use a 100 kΩ pull-down on the gate to hold the MOSFET off during controller power-up.
Do not exceed the 40 V VDS rating, even during avalanche events; the part is not designed for repetitive avalanche. Do not operate at VGS below 6 V, where RDS(on) increases sharply and the device operates in the linear region with high dissipation. Do not bypass the gate-source resistor during turn-off - a 10 kΩ minimum resistor prevents ESD-induced turn-on during handling and PCB assembly.
Compliance Information
RoHS and lead-free status per Infineon product page. AEC-Q100 qualification not explicitly stated in the verified data; automotive-grade qualification should be confirmed against the latest Infineon datasheet if the design requires it.
