IQE036N08NM6CGATMA1 vs IQE013N04LM6SCATMA1 Comparison
Detailed side-by-side comparison of IQE036N08NM6CGATMA1 by Infineon and IQE013N04LM6SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE036N08NM6CGATMA1
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 β ActiveInfineon
IQE013N04LM6SCATMA1 - 40V 1.35mΞ© OptiMOS Source-Down MOSFET | Infineon
IQE013N04LM6SCATMA1 β ActiveSpecification Comparison
| Parameter | IQE036N08NM6CGATMA1 | IQE013N04LM6SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $1.02 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (Vds) | 80 V | β |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | β |
| Continuous Drain Current (Id) at Tc | 118 A | β |
| Continuous Drain Current (Id) at Ta | 16.7 A | β |
| Rds(on) max at Vgs=10V | 3.6 mOhm | β |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | β |
| Power Dissipation at Tc | 125 W | β |
| Power Dissipation at Ta | 2.5 W | β |
| Operating Temperature Range | -55 C to +175 C (junction, Tj) | [DATA_NEEDED: T_J min/max] |
| Package | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-WHSON-8-1 (3.3 mm Γ 3.3 mm Source-Down PQFN) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | OptiMOS (trench MOSFET) |
| Configuration | Single N-channel, Source-Down | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 40 V |
| Gate-Source Voltage (V<sub>GS</sub>) | β | Β±20 V |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | β | 1.35 mΞ© |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 Β°C | β | 31 A |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 Β°C | β | [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed) |
| Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 Β°C | β | 205 A |
| Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 Β°C | β | 2.5 W |
| Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 Β°C | β | 107 W |
| Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V | β | 41 nC |
| Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V | β | 3800 pF |
| Packaging | β | Tape & Reel |
| Part Family | β | OptiMOS Source-Down, 40 V, 3.3Γ3.3 PQFN |