IQE050N08NM5CGATMA1 vs IQD020N10NM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQE050N08NM5CGATMA1 by Infineon and IQD020N10NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE050N08NM5CGATMA1
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΞ© Source-Down | Infineon
IQE050N08NM5CGATMA1 β ActiveInfineon
IQD020N10NM5CGSCATMA1
IQD020N10NM5CGSCATMA1 - 100V 276A N-Channel MOSFET | Infineon
IQD020N10NM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE050N08NM5CGATMA1 | IQD020N10NM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.75 | $3.20 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | 100 V |
| Continuous Drain Current (Ta) | 16 A | β |
| Continuous Drain Current (Tc) | 101 A | β |
| On-Resistance RDS(on) Max | 5.0 mΞ© | β |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Power Dissipation (Tc) | 100 W | 333 W |
| Package | PG-TTFN-9-1 (Surface Mount) | PG-WHTFN-9-U02 (PQFN 5x6 mm) with exposed thermal pad |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Source-Down) | β |
| Gate Threshold Vgs(th) Typ | [DATA_NEEDED: Vgs(th) typical value] | β |
| Operating Temperature | -55Β°C to +175Β°C (TJ max) | β |
| Total Gate Charge Qg Typ | [DATA_NEEDED: total gate charge Qg typical] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 100V (IQD series) |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | β | 276 A |
| Continuous Drain Current (ID, Ta) | β | 26 A |
| On-Resistance (RDS(on), max) | β | 2.0 mOhm at VGS = 10 V |
| On-Resistance (RDS(on)) - JLCPCB listing | β | 1.8 mOhm at VGS = 10 V |
| Gate Threshold Voltage (VGS(th), typ) | β | 3.8 V |
| Gate Charge (Qg, total) | β | 107 nC at VGS = 10 V |
| Input Capacitance (Ciss) | β | 7.3 nF |
| Output Capacitance (Coss) | β | 1 nF |
| Reverse Transfer Capacitance (Crss) | β | 42 pF |
| Operating Junction Temperature | β | -55C to +175C |
| Gate Drive Level | β | Logic-level (10 V VGS rated) |