IQD020N10NM5CGSCATMA1 - 100V 276A N-Channel MOSFET | Infineon
MPN: IQD020N10NM5CGSCATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.95 | $39.50 |
| 100 | $3.72 | $372.00 |
| 500 | $3.45 | $1,725.00 |
| 1,000 | $3.2 | $3,200.00 |
IQD020N10NM5CGSCATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to route and regulate high currents in power-conversion circuits. Within the broader component taxonomy, the N-channel enhancement-mode MOSFET sits under power transistors -> MOSFETs -> discrete semiconductors. The N-channel variant is preferred over P-channel in most designs because electrons have higher mobility than holes, yielding lower on-resistance per unit silicon area and superior figure-of-merit (FOM = RDS(on) x Qg).
Key specifications include: drain-source voltage (VDS) of 100 V, continuous drain current (ID) of 276 A at case temperature, gate threshold voltage (VGS(th)) of 3.8 V typical, total gate charge (Qg) of 107 nC at VGS = 10 V, and an extremely low maximum on-resistance of 2.0 mOhm. Power dissipation is 3 W on the Ta (ambient) rating and 333 W on the Tc (case) rating, with an operating junction temperature range of -55C to +175C.
The IQD020N10NM5CGSCATMA1 architecture uses a logic-level gate drive (10 V VGS), shield-gate trench technology, and an exposed top-side pad for top-side cooling. Its very low RDS(on) x Qg figure-of-merit minimises conduction and switching losses simultaneously, making it especially suitable for hard-switching topologies at high switching frequencies. Compared to its predecessor generation, OptiMOS 5 reduces switching losses by roughly 30 percent at equivalent on-resistance.
Typical applications include server and telecom switched-mode power supplies (SMPS), 48 V battery-protection and hot-swap controllers in telecom/data-centre equipment, synchronous rectification in high-current DC-DC converters, motor-drive half-bridges for industrial drives, and battery management systems (BMS) for e-mobility and energy-storage installations. The device is also frequently used in OR-ing and eFuse circuits where low conduction loss is critical.
When designing with this part, ensure the gate-driver stage can deliver at least 10 V VGS to achieve the rated on-resistance. PCB layout should minimise parasitic source-inductance (Kelvin connection recommended) and use sufficient copper area on the exposed thermal pad to keep Tj within the 175C maximum. A gate-source resistor of 10 kOhm is recommended to prevent inadvertent turn-on from dv/dt coupling.
This page synthesises distributor pricing across DigiKey, Mouser, LCSC, Arrow, and Unikeyic, plus drop-in alternative analysis and practical design notes not found in the manufacturer datasheet itself, giving engineers a single-source decision matrix for the IQD020N10NM5CGSCATMA1 footprint.
Drop-in alternatives for IQD020N10NM5CGSCATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQD020N10NM5CGSCATMA1 (same form factor and footprint) — differing in Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Power Dissipation (Tc).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IQE065N10NM5CGSCATMA1
✅ Drop-In✓ In Stock
$1.28 / Unit
View Datasheet →IQE050N08NM5CGATMA1
✅ Drop-In✓ In Stock
$1.75 / Unit
View Datasheet →IQDH29NE2LM5CGSCATMA1
✅ Drop-In✓ In Stock
$1.84 / Unit
View Datasheet →IQDH35N03LM5SCATMA1
✅ Drop-In✓ In Stock
$2.05 / Unit
View Datasheet →IQDH88N06LM5CGSCATMA1
✅ Drop-In✓ In Stock
$2.31 / Unit
View Datasheet →IQD020N10NM5CGSCATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 100V (IQD series) |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc) | 276 A |
| Continuous Drain Current (ID, Ta) | 26 A |
| On-Resistance (RDS(on), max) | 2.0 mOhm at VGS = 10 V |
| On-Resistance (RDS(on)) - JLCPCB listing | 1.8 mOhm at VGS = 10 V |
| Gate Threshold Voltage (VGS(th), typ) | 3.8 V |
| Gate Charge (Qg, total) | 107 nC at VGS = 10 V |
| Input Capacitance (Ciss) | 7.3 nF |
| Output Capacitance (Coss) | 1 nF |
| Reverse Transfer Capacitance (Crss) | 42 pF |
| Power Dissipation (Ta) | 3 W |
| Power Dissipation (Tc) | 333 W |
| Operating Junction Temperature | -55C to +175C |
| Package | PG-WHTFN-9-U02 (PQFN 5x6 mm) with exposed thermal pad |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Gate Drive Level | Logic-level (10 V VGS rated) |
IQD020N10NM5CGSCATMA1 Pin Configuration
| Pin 1 | GATE — Gate control input (logic-level, 10V VGS rated) |
| Pin 2 | SOURCE — Source connection (also bonded to thermal pad) |
| Pin 3 | SOURCE — Source connection (also bonded to thermal pad) |
| Pin 4 | SOURCE — Source connection (also bonded to thermal pad) |
| Pin 5 | SOURCE — Source connection (also bonded to thermal pad) |
| Pin 6 | DRAIN — Drain connection (high-voltage terminal) |
| Pin 7 | DRAIN — Drain connection (high-voltage terminal) |
| Pin 8 | DRAIN — Drain connection (high-voltage terminal) |
| Pin 9 | DRAIN — Drain connection (high-voltage terminal) |
Safe Operating Area (DC, TJ=175C)
Typical Applications
IQD020N10NM5CGSCATMA1 is suitable for 6 applications: 48V Telecom Hot-Swap and Battery Protection, Server and Data-Centre SMPS Synchronous Rectification, Industrial Motor Drive Half-Bridge, E-Mobility Battery Management System (BMS) Disconnect, Solar PV Optimiser and MPPT Switch, OR-ing and eFuse Power-Path Redundancy.
48V Telecom Hot-Swap and Battery Protection
The IQD020N10NM5CGSCATMA1 is ideally suited for 48V telecom hot-swap and battery-protection circuits because its 100V VDS rating provides a 100% safety margin above the -48V telecom rail, while its 2.0 mOhm maximum RDS(on) keeps conduction loss below 4W even at 50A continuous. With 276A pulsed drain-current capability, the device easily rides through inrush transients when a board is plugged into a live backplane. Placed in the high-side disconnect path with a dedicated hot-swap controller, it eliminates the need for fuses and provides programmable fault response. Compared to older 80V parts, the extra 20V of headroom prevents avalanche failure during transient over-voltage events on long battery cables.
Recommended
Server and Data-Centre SMPS Synchronous Rectification
In high-current 48V-to-12V intermediate-bus converters for hyperscale data centres, the IQD020N10NM5CGSCATMA1 serves as the synchronous rectifier on the secondary side. Its 107 nC total gate charge enables switching frequencies up to 300 kHz without exceeding driver losses, while its 2.0 mOhm RDS(on) minimises body-diode conduction time. Placed in a half-bridge topology with a GaN or Si primary stage, it dramatically reduces reverse-recovery losses compared to older planar MOSFETs. The 5x6 mm PQFN package fits beneath the magnetics on a 1U server motherboard, and its top-side exposed pad enables direct cooling via the heatsink chassis.
Recommended
Industrial Motor Drive Half-Bridge
Industrial motor drives rated up to 80V DC bus voltage benefit from the IQD020N10NM5CGSCATMA1's 100V VDS rating and 276A pulsed drain-current handling. Used in a three-phase inverter bridge with proper gate-driver isolation, it switches up to 30A per motor phase at PWM frequencies from 20-50 kHz. The logic-level 10V gate drive enables direct connection to digital-isolated gate drivers without charge-pump circuitry, simplifying the BOM. Its 333W power dissipation capability on the case (Tc) rating supports aggressive overload cycles required by industrial servo applications, and the wide -55C to +175C junction range tolerates under-hood automotive and factory-floor environments.
Recommended
E-Mobility Battery Management System (BMS) Disconnect
For e-mobility and energy-storage systems with battery packs in the 48-96V range, the IQD020N10NM5CGSCATMA1 acts as a solid-state disconnect switch in the BMS pack-protection path. Its 2.0 mOhm RDS(on) keeps continuous conduction loss under 2W at 30A, eliminating the heat-dissipation issues of mechanical contactors. The 100V VDS rating tolerates inductive kickback from the battery cabling during disconnect events, while the 276A pulsed current capability handles simultaneous charging and motor regen transients. The PQFN 5x6 mm footprint allows integration into compact battery-pack PCBs where every square millimetre counts.
Recommended
Solar PV Optimiser and MPPT Switch
In solar PV micro-optimers and module-level power electronics, the IQD020N10NM5CGSCATMA1 functions as the main switching element on the panel side, handling open-circuit voltages up to 80V per panel string. Its 100V VDS rating accommodates 2-panel series configurations common in residential PV systems. The low RDS(on) x Qg figure-of-merit minimises both conduction and switching losses, maximising energy harvest in the partial-shade conditions where optimisers earn their keep. The top-side exposed pad allows direct mounting to the aluminium optimiser housing for passive cooling, eliminating fans in outdoor IP-rated enclosures.
Recommended
OR-ing and eFuse Power-Path Redundancy
For redundant -48V power-distribution architectures in telecom and data-centre applications, the IQD020N10NM5CGSCATMA1 serves as the OR-ing MOSFET in a source-follower configuration. Its 2.0 mOhm RDS(on) keeps the diode-OR conduction loss under 1.5W per 30A feed, while its fast body-diode reverse-recovery characteristics enable seamless hot-swap between two independent power sources. Placed back-to-back with a second device for true bi-directional blocking, it provides programmable eFuse behaviour via VGS control, replacing legacy mechanical circuit breakers with solid-state intelligence that reports fault status to the system controller.
Recommended
Recommended Products Summary
Engineering reference data for IQD020N10NM5CGSCATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQE065N10NM5CGSCATMA1 | IQE050N08NM5CGATMA1 | IQDH29NE2LM5CGSCATMA1 | IQDH35N03LM5SCATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-WHTFN-9-U02 (PQFN 5x6 mm) | PG-TDSON-8 (SuperSO8) - different outline | PG-TDSON-8 (SuperSO8) - different outline | PG-WHTFN-9 family - same outline | PG-WHTFN-9 family - same outline | PG-WHTFN-9 family - same outline |
| VDS (Drain-Source Voltage) | 100 V | 100 V | 80 V (-20%) | 25 V (-75%) | 30 V (-70%) | 60 V (-40%) |
| RDS(on) max at VGS=10V | 2.0 mOhm | 6.5 mOhm (+225%) | 5.0 mOhm (+150%) | 0.29 mOhm (-85%) | 3.5 mOhm (+75%) | 8.8 mOhm (+340%) |
| Technology Generation | OptiMOS 5 (100V) | OptiMOS 5 (100V) - same | OptiMOS 5 (80V) | OptiMOS 5 (25V) | OptiMOS 5 (30V) | OptiMOS 5 (60V) |
| Operating Junction Temperature | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lower RDS(on) at same VDS class within PQFN 5x6 mm footprint (vs IQDH88N06LM5CGSCATMA1)
- Higher VDS rating than most OptiMOS 5 PQFN siblings (vs IQDH35N03LM5SCATMA1)
- Logic-level gate drive compatible with 10V controllers (vs IQE065N10NM5CGSCATMA1)
Design Notes
At 100A continuous drain current with RDS(on) of 2.0 mOhm, conduction loss is approximately Pcond = I^2 x RDS(on) = 100^2 x 0.002 = 20W. To keep Tj below the 175C maximum in a 25C ambient with the 5x6 mm PQFN package (typical theta_JA of ~40 C/W on a 1 oz 4-layer PCB with standard thermal via array), the part must be mounted with a full 4x thermal via array connecting the exposed pad to internal copper planes. Estimated: At 20W dissipation and 40 C/W theta_JA, Tj rise above ambient is 800C which exceeds rating - either reduce current to ~50A or add active cooling. Always consult Diagram 2 in the Infineon datasheet for the de-rating curve at your specific case temperature.
Layout critical for high-current MOSFET performance: (1) Place the gate-driver IC within 5mm of the gate pin to minimise gate-loop inductance; (2) Use a Kelvin source connection by routing the gate-driver ground return to a dedicated source-sense pin (pin 2 or 3) rather than the thermal pad, eliminating source-inductance-induced gate-rail collapse; (3) Stitch the exposed thermal pad with at least 4 thermal vias (0.3mm drill, 1.0mm pitch) to a 2 oz inner copper pour; (4) Keep high-dv/dt drain traces at least 1mm away from gate traces to avoid capacitive coupling that can cause parasitic turn-on.
Three common pitfalls when using the IQD020N10NM5CGSCATMA1: (1) Driving the gate below 8V - at VGS = 4.5V the RDS(on) increases to roughly 3.5 mOhm, doubling conduction loss; (2) Omitting the gate-source resistor - a 10 kOhm resistor from gate to source is required to hold the device off during power-up when the gate driver is in high-impedance; (3) Exceeding VDS without avalanche margin - the 100V rating is the absolute maximum, design to 80V maximum continuous VDS to stay within the safe operating area. Per the Infineon datasheet, the part is rated for avalanche energy so transient overshoots are tolerable, but sustained over-voltage will degrade the body diode.
Compliance Information
RoHS and halogen-free compliance per JLCPCB parametric listing. AEC-Q100 automotive qualification is NOT specified - for automotive applications consider the IAUC-prefixed Infineon parts in the same OptiMOS 5 family.
