IQE065N10NM5CGSCATMA1 vs IQD020N10NM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQE065N10NM5CGSCATMA1 by Infineon and IQD020N10NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE065N10NM5CGSCATMA1
IQE065N10NM5CGSCATMA1 - 100V 6.5mOhm N-Ch MOSFET | Infineon
IQE065N10NM5CGSCATMA1 β ActiveInfineon
IQD020N10NM5CGSCATMA1
IQD020N10NM5CGSCATMA1 - 100V 276A N-Channel MOSFET | Infineon
IQD020N10NM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE065N10NM5CGSCATMA1 | IQD020N10NM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.28 | $3.20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25 C | 85 A | β |
| Continuous Drain Current (ID) at TA | 13 A | β |
| On-Resistance (RDS(on)) max at VGS=10V | 6.5 mOhm | β |
| Power Dissipation at TA | 2.5 W | β |
| Power Dissipation at TC | 100 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Package | PG-WHTFN-9-1 (Source-Down) | PG-WHTFN-9-U02 (PQFN 5x6 mm) with exposed thermal pad |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench-gate | β |
| Operating Temperature Range | -55 C to +150 C | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Product Family | β | OptiMOS 5 100V (IQD series) |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, Tc) | β | 276 A |
| Continuous Drain Current (ID, Ta) | β | 26 A |
| On-Resistance (RDS(on), max) | β | 2.0 mOhm at VGS = 10 V |
| On-Resistance (RDS(on)) - JLCPCB listing | β | 1.8 mOhm at VGS = 10 V |
| Gate Threshold Voltage (VGS(th), typ) | β | 3.8 V |
| Gate Charge (Qg, total) | β | 107 nC at VGS = 10 V |
| Input Capacitance (Ciss) | β | 7.3 nF |
| Output Capacitance (Coss) | β | 1 nF |
| Reverse Transfer Capacitance (Crss) | β | 42 pF |
| Power Dissipation (Ta) | β | 3 W |
| Power Dissipation (Tc) | β | 333 W |
| Operating Junction Temperature | β | -55C to +175C |
| Gate Drive Level | β | Logic-level (10 V VGS rated) |