IQEH50NE2LM7UCGSCATMA1 vs IQE008N03LM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQEH50NE2LM7UCGSCATMA1 by Infineon and IQE008N03LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH50NE2LM7UCGSCATMA1
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 β ActiveInfineon
IQE008N03LM5CGSCATMA1
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQEH50NE2LM7UCGSCATMA1 | IQE008N03LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.78 | $2.10 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS 5 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) Max | 25 V | 30 V |
| Continuous Drain Current (ID) at TA | 54 A | β |
| Continuous Drain Current (ID) at TC | 422 A | β |
| RDS(on) Max | 0.5 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) typ | 2 V | β |
| Power Dissipation (PD) at TA | 2.5 W | β |
| Power Dissipation (PD) at TC | 150 W | β |
| Maximum Junction Temperature | 175 Β°C | β |
| Package | PG-WHTFN-9-1 (surface mount) | PG-WHTFN-9 (WHTFN) |
| Mounting Type | Surface Mount | Surface Mount (top + bottom cooling) |
| Series | OptiMOS 7 | β |
| Technology | Silicon N-Channel Power MOSFET | Trench MOSFET (OptiMOS 5) |
| Configuration | β | Dual N-Channel MOSFET Array |
| Continuous Drain Current (ID) Max | β | 252 A (per channel, case-temperature limited) |
| On-Resistance (RDS(on)) Max | β | 0.85 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS maximum rating] |
| Gate Threshold Voltage (VGS(th)) | β | 2 V (typ) |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Polarity | β | N-Channel |
| Number of Pins | β | 9 (WHTFN with exposed thermal pads) |
| MSL Level | β | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) |
| RoHS Status | β | Compliant |
| Halogen-Free | β | Yes (Infineon standard for OptiMOS 5) |