IQEH50NE2LM7UCGSCATMA1 vs IQE020N04LM6CGSCATMA1 Comparison
Detailed side-by-side comparison of IQEH50NE2LM7UCGSCATMA1 by Infineon and IQE020N04LM6CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH50NE2LM7UCGSCATMA1
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 β ActiveInfineon
IQE020N04LM6CGSCATMA1
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΞ© N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQEH50NE2LM7UCGSCATMA1 | IQE020N04LM6CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.78 | $1.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) Max | 25 V | β |
| Continuous Drain Current (ID) at TA | 54 A | β |
| Continuous Drain Current (ID) at TC | 422 A | β |
| RDS(on) Max | 0.5 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) typ | 2 V | β |
| Power Dissipation (PD) at TA | 2.5 W | β |
| Power Dissipation (PD) at TC | 150 W | β |
| Maximum Junction Temperature | 175 Β°C | β |
| Package | PG-WHTFN-9-1 (surface mount) | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) |
| Mounting Type | Surface Mount | Surface Mount |
| Series | OptiMOS 7 | β |
| Technology | Silicon N-Channel Power MOSFET | OptiMOS 6 trench |
| Part Family | β | OptiMOS 6 low-voltage power MOSFET |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current at TA=25Β°C | β | 25 A |
| Continuous Drain Current at TC=25Β°C | β | 166 A |
| Maximum RDS(on) | β | 2.0 mΞ© (per IQE part-number decode) |
| Power Dissipation at TA=25Β°C | β | 2.5 W |
| Power Dissipation at TC=25Β°C | β | 107 W |
| Pin Count | β | 9 |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C (junction, per Infineon MOSFET convention) |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| MSL Level | β | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) |