IQEH50NE2LM7UCGSCATMA1 vs IQE050N08NM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQEH50NE2LM7UCGSCATMA1 by Infineon and IQE050N08NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQEH50NE2LM7UCGSCATMA1
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 β ActiveInfineon
IQE050N08NM5CGSCATMA1
IQE050N08NM5CGSCATMA1 - 80V 99A OptiMOS 5 N-Channel MOSFET | Infineon
IQE050N08NM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQEH50NE2LM7UCGSCATMA1 | IQE050N08NM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.78 | $0.74 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 7 Power-Transistor | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) Max | 25 V | β |
| Continuous Drain Current (ID) at TA | 54 A | 16 A |
| Continuous Drain Current (ID) at TC | 422 A | 99 A |
| RDS(on) Max | 0.5 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) typ | 2 V | β |
| Power Dissipation (PD) at TA | 2.5 W | β |
| Power Dissipation (PD) at TC | 150 W | β |
| Maximum Junction Temperature | 175 Β°C | β |
| Package | PG-WHTFN-9-1 (surface mount) | PG-WHTFN-9-1 (Source-Down) |
| Mounting Type | Surface Mount | Surface Mount |
| Series | OptiMOS 7 | β |
| Technology | Silicon N-Channel Power MOSFET | OptiMOS 5 (trench) |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 80 V |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | β | 5.0 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 3.8 V |
| Gate Charge Qg typ | β | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation at TC (PD) | β | 100 W |
| Total Power Dissipation at TA (PD) | β | 2.5 W |
| Operating Temperature Range | β | -55C to +175C (junction, typical) |
| Lead-Free / RoHS | β | Lead-free, RoHS compliant |
| MSL Level | β | 1 |