IQE050N08NM5CGSCATMA1 - 80V 99A OptiMOS 5 N-Channel MOSFET | Infineon
MPN: IQE050N08NM5CGSCATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.88 | $880.00 |
| 3,000 | $0.74 | $2,220.00 |
IQE050N08NM5CGSCATMA1 Overview
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor switch that uses an insulated gate to modulate the drain-source current. MOSFETs belong to the broader power-management discrete family, sitting in the hierarchy: power MOSFET -> discrete semiconductor -> semiconductor. OptiMOS is Infineon's brand name for its high-performance trench MOSFET families, and the Source-Down package is a specific leadframe variant in which the source is exposed at the bottom for direct PCB cooling.
Key features of the IQE050N08NM5CGSCATMA1 include an industry-leading 5.0 mOhm RDS(on) at VGS=10 V, a logic-level compatible 3.8 V typical gate threshold, low gate charge Qg for high-frequency switching, and an integrated monolithic Schottky-like body diode with low Qrr for reduced switching losses in hard-switched topologies. The PG-WHTFN-9-1 package is a 9-pin surface-mount outline measuring 5 mm x 6 mm with a large exposed thermal pad.
Typical applications include high-current synchronous rectification in server and telecom SMPS, motor drive half-bridges for industrial drives, hot-swap and OR-ing controllers in 48 V distribution, and high-efficiency DC-DC conversion stages where Source-Down cooling enables double-sided PCB layouts. Designers choose this part when low conduction loss and superior top-side cooling are required in a small SMD footprint.
When designing with this part, place the Source-Down exposed pad on a top-side copper pour with thermal vias to inner planes, and ensure the drain traces (which are now on the bottom of the package) are routed as wide as possible. Gate-drive design should target 10 V VGS for lowest RDS(on); at 4.5 V the RDS(on) increases roughly 50% and conduction loss grows accordingly.
This page synthesizes distributor pricing, drop-in alternatives from the Infineon OptiMOS 5 family and verified cross-brand equivalents, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IQE050N08NM5CGSCATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQE050N08NM5CGSCATMA1 (same form factor and footprint) — differing in Technology, Package, Operating Temperature Range, Continuous Drain Current (ID) at TA, Product Family.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IQE050N08NM5CGATMA1
✅ Drop-In✓ In Stock
$1.75 / Unit
View Datasheet →IQE065N10NM5CGSCATMA1
✅ Drop-In✓ In Stock
$1.28 / Unit
View Datasheet →IQE036N08NM6CGATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IQEH50NE2LM7UCGSCATMA1
✅ Drop-In✓ In Stock
$1.78 / Unit
View Datasheet →IQE220N15NM5CGSCATMA1
✅ Drop-In✓ In Stock
$2.18 / Unit
View Datasheet →ISC015N06NM5ATMA1
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →IQE050N08NM5CGSCATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS 5 (trench) |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) at TC | 99 A |
| Continuous Drain Current (ID) at TA | 16 A |
| On-Resistance RDS(on) max at VGS=10V | 5.0 mOhm |
| Gate Threshold Voltage VGS(th) typ | 3.8 V |
| Total Power Dissipation at TC (PD) | 100 W |
| Total Power Dissipation at TA (PD) | 2.5 W |
| Operating Temperature Range | -55C to +175C (junction, typical) |
| Package | PG-WHTFN-9-1 (Source-Down) |
| Mounting Type | Surface Mount |
| Lead-Free / RoHS | Lead-free, RoHS compliant |
| MSL Level | 1 |
IQE050N08NM5CGSCATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input (logic-level compatible, 3.8V typical threshold) |
| Pin 2 | Source — Source connection (also exposed on top thermal pad - Source-Down configuration) |
| Pin 3 | Source — Source connection (parallel pin for low inductance) |
| Pin 4 | Source — Source connection (parallel pin for low inductance) |
| Pin 5 | Source — Source connection (parallel pin for low inductance) |
| Pin 6 | Source — Source connection (parallel pin for low inductance) |
| Pin 7 | Source — Source connection (parallel pin for low inductance) |
| Pin 8 | Drain — Drain connection (bottom-side, routed to PCB traces underneath) |
| Pin 9 | Drain — Drain connection (parallel pin, bottom-side) |
Safe Operating Area (DC, Tj=175C)
Typical Applications
IQE050N08NM5CGSCATMA1 is suitable for 6 applications: 48V Server/Telecom SMPS Synchronous Rectification, Industrial Motor Drive Half-Bridge, 48V Hot-Swap and OR-ing Controller, High-Efficiency DC-DC Conversion, Battery Management and Protection, Solar Inverter and Photovoltaic Optimizer.
48V Server/Telecom SMPS Synchronous Rectification
The IQE050N08NM5CGSCATMA1 fits 48V server and telecom SMPS secondary-side synchronous rectification because its 5.0 mOhm RDS(on) at VGS=10V delivers conduction losses under 5W at 50A continuous, and its 99A continuous drain rating (TC) provides ample headroom for 1U server backplanes. The Source-Down PG-WHTFN-9-1 package enables top-side thermal vias directly to the inner copper planes, reducing junction temperature by an estimated 15-20C versus conventional Source-Up SMD MOSFETs in the same footprint. In a 48V-to-12V buck converter running at 250 kHz, the part's low Qrr body diode reduces dead-time switching losses, contributing to overall efficiency above 96%.
Recommended
Industrial Motor Drive Half-Bridge
The IQE050N08NM5CGSCATMA1 is suited for industrial motor-drive half-bridges operating from 24V to 48V bus rails because its 80V VDS rating comfortably tolerates back-EMF spikes and its 5.0 mOhm RDS(on) minimizes conduction loss during high-torque PWM cycles. The Source-Down leadframe simplifies double-sided PCB cooling, which is critical in IPM-style integrated modules where multiple MOSFETs share a thermal pad. At 30A RMS phase current the part dissipates approximately 4.5W per device, well within the 100W TC-rated power dissipation. Designers should pair the part with a galvanically-isolated gate driver such as 2EDL8034G4CXTMA1 to handle the high dV/dt up to 50V/ns typical of this MOSFET family.
Recommended
48V Hot-Swap and OR-ing Controller
In 48V hot-swap and OR-ing applications the IQE050N08NM5CGSCATMA1 acts as the main pass-FET because its 5.0 mOhm RDS(on) at 50A continuous produces only 12.5W conduction loss, and the 80V VDS provides 32V headroom over the nominal 48V rail for transient suppression. Its Source-Down package allows the FET to be placed on the bottom of a 1U server PCB with thermal vias to the inner ground plane, freeing top-side real estate for magnetics. The part's 99A continuous rating also supports hot-swap of high-current AI accelerator cards drawing 60-80A during power-up transients.
Recommended
High-Efficiency DC-DC Conversion
The IQE050N08NM5CGSCATMA1 supports high-frequency DC-DC conversion stages in 48V-to-PoL converters because its low gate charge Qg and Source-Down cooling enable 500 kHz+ switching with manageable switching losses. The 5.0 mOhm RDS(on) minimizes conduction loss in continuous-conduction mode, while the Source-Down footprint keeps the thermal loop small, reducing parasitic inductance that would otherwise limit duty cycle at high frequency. In a 1kW 48V-to-12V full-bridge converter, two pairs of IQE050N08NM5CGSCATMA1 deliver efficiency above 97% at full load, with junction temperatures staying below 90C thanks to Source-Down copper-pour cooling.
Recommended
Battery Management and Protection
The IQE050N08NM5CGSCATMA1 fits battery management and protection circuits in 48V lithium battery packs because its 80V VDS handles 16S LiFePO4 (57.6V nominal) and the 5.0 mOhm RDS(on) supports 50-80A continuous discharge currents with minimal voltage drop. The Source-Down package's low thermal resistance keeps the FET cool during high-current pulse discharge, while its monolithic body diode provides reliable reverse polarity protection. Designers should note that the part's 3.8V typical gate threshold is logic-level compatible, simplifying gate drive from a battery-management microcontroller.
Recommended
Solar Inverter and Photovoltaic Optimizer
The IQE050N08NM5CGSCATMA1 is used in photovoltaic power optimizers and micro-inverters where its 80V VDS rating handles individual PV module open-circuit voltages up to 60V and its 5.0 mOhm RDS(on) minimizes conversion losses at typical optimizer currents of 10-15A. The Source-Down package's superior thermal performance is critical in outdoor sealed enclosures where ambient temperatures can reach 70C and convective cooling is limited. With 99A TC-rated current capability the part also supports parallel operation for higher-power optimizers, and its RoHS-compliant lead-free construction meets solar-industry environmental requirements.
Recommended
Recommended Products Summary
Engineering reference data for IQE050N08NM5CGSCATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQE050N08NM5CGATMA1 | IQE065N10NM5CGSCATMA1 | IQE036N08NM6CGATMA1 | IQEH50NE2LM7UCGSCATMA1 | IQE220N15NM5CGSCATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-WHTFN-9-1 (Source-Down) | PG-WHTFN-9-1 (Source-Down) - same | PG-WHTFN-9-1 (Source-Down) - same | PG-WHTFN-9-1 (Source-Down) - same | PG-WHTFN-9-1 (Source-Down) - same | PG-WHTFN-9-1 (Source-Down) - same | PG-WHTFN-9-1 (Source-Down) - same |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 100 V | 80 V | 100 V | 150 V | 60 V |
| RDS(on) max at VGS=10V | 5.0 mOhm | 5.0 mOhm | 6.5 mOhm | 3.6 mOhm | 5.0 mOhm | 22 mOhm | 1.5 mOhm |
| Gate Threshold Voltage (typ) | 3.8 V | 3.8 V | 3.8 V | 3.8 V | 3.5 V (OptiMOS 7) | 3.8 V | 3.5 V |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 | OptiMOS 7 | OptiMOS 5 | OptiMOS 5 |
| RoHS / Lead-Free | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Source-Down package enables top-side direct PCB cooling (vs Conventional Source-Up DPAK MOSFETs)
- 5.0 mOhm RDS(on) at 80V VDS in Source-Down footprint (vs IQE065N10NM5CGSCATMA1 (6.5 mOhm at 100V))
- Lower RDS(on) at same VDS than OptiMOS 6 alternative (vs IQE036N08NM6CGATMA1 (3.6 mOhm OptiMOS 6))
- Higher continuous current (99A TC) than higher-VDS alternatives (vs IQE220N15NM5CGSCATMA1 (55A at 150V))
Design Notes
Estimated: At VDS=48V, ID=50A continuous with VGS=10V, conduction loss is approximately I^2 x RDS(on) x 1.1 (temperature factor) = 50^2 x 0.005 x 1.1 = 13.75W. The Source-Down PG-WHTFN-9-1 package with top-side 6cm2 copper pour achieves roughly 1.5 C/W junction-to-ambient thermal resistance, so junction temperature rise above ambient is approximately 13.75 x 1.5 = 20.6C. At 70C ambient the junction reaches approximately 90.6C, well within the 175C maximum. For designs approaching 80A continuous, expand the top copper area to 10 cm2 or add forced-air cooling.
The Source-Down PG-WHTFN-9-1 package places the thermal pad on the source side (top of package), opposite to conventional Source-Up MOSFETs. Therefore, route the source connection to the top-side copper pour, and route the drain traces on the bottom layer of the PCB directly underneath the package. Place thermal vias in a 4x4 grid on 1.0 mm pitch directly under the exposed pad, connecting top copper to inner ground/return planes. Keep the gate drive trace short (<10 mm) and avoid running it parallel to drain traces to minimize dV/dt-induced coupling.
Common Source-Down layout pitfall: because the source is on the top, the high-side MOSFET in a half-bridge has its source switching at a high dV/dt node. This inverts the conventional layout - the high-side Source-Down FET's source pad must be tied to the switching node (not ground). Designers migrating from Source-Up designs should reverse their half-bridge layout conventions and verify the gate-drive return path through Kelvin-source pins (if available) to avoid ground bounce. Use a 4-layer PCB with a continuous inner ground plane for best thermal and EMI performance.
Do not exceed the 80V VDS rating even for transients - 48V nominal bus rails typically see 80V spike during hot-plug events and should be clamped. Also note that at VGS=4.5V the RDS(on) doubles to roughly 10 mOhm, so logic-level gate drives (5V) will sacrifice 50% of the part's conduction performance. Always drive the gate at 10V for synchronous rectification applications. Finally, the Source-Down exposed pad must be soldered to the PCB copper pour - insufficient solder will raise thermal resistance and may cause field failures.
Compliance Information
RoHS and REACH compliant per Infineon product page. AEC-Q100 not applicable - this is an industrial/consumer grade MOSFET, not automotive qualified. Halogen-free per Infineon OptiMOS 5 datasheet.
