IR2011SPBF vs IR2011STRPBF Comparison

Detailed side-by-side comparison of IR2011SPBF by Infineon and IR2011STRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IR2011SPBF IR2011STRPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $0.71
Product Type Half-Bridge Gate Driver IC β€”
Configuration High-Side and Low-Side, Inverting High-Side and Low-Side (Independent)
Number of Outputs 2 β€”
Offset Voltage (High-Side, max) 200 V β€”
Gate Drive Supply Voltage (VCC, VBS) 10 V to 20 V β€”
Output Source/Sink Current 1 A / 1 A (typ) β€”
Propagation Delay (typ) 80 ns β€”
Rise / Fall Time (typ) [DATA_NEEDED: rise/fall time] β€”
Input Logic Compatibility CMOS / LSTTL, down to 3.0 V β€”
dV/dt Immunity Yes β€”
Negative Transient Tolerance Yes (on VS pin) dV/dt immune
Operating Temperature Range -40 C to +125 C β€”
Package 8-SOIC (DSO-8) 8-SOIC (3.90 mm body width)
Mounting Type Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix) Lead-Free, RoHS Compliant
Tube / Reel Packaging Tube (per Infineon PBF convention) β€”
Number of Drivers β€” 2 (Half-Bridge)
Peak Source Current β€” 1 A (typical)
Peak Sink Current β€” 1 A (typical)
Gate Drive Supply Voltage (VCC) β€” 10 V to 20 V
Floating Supply Voltage (VBS) β€” 10 V to 20 V (operational to +200 V)
Logic Input Compatibility β€” 3.0 V CMOS or LSTTL
Propagation Delay (typ.) β€” 80 ns
Turn-On Rise Time (typ.) β€” 35 ns
Turn-Off Fall Time (typ.) β€” 20 ns
Offset Voltage Rating β€” 200 V
Operating Temperature β€” -40 C to +125 C

Datasheets & Resources

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