IR2011STRPBF - 200V Half-Bridge Gate Driver | Infineon | SOIC-8
MPN: IR2011STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.53 | $1.53 |
| 10 | $1.28 | $12.80 |
| 100 | $0.95 | $95.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.71 | $710.00 |
IR2011STRPBF Overview
A gate driver IC (also called a MOSFET driver or IGBT driver) is a power management semiconductor that sits between a low-power control signal (from a microcontroller or PWM controller) and a high-current power switch. By providing high peak currents and rapid voltage transitions, gate drivers overcome the large input capacitance of power MOSFETs/IGBTs, enabling fast switching that minimizes switching losses and improves converter efficiency. Gate drivers are critical building blocks within the broader power management IC hierarchy.
Key features include a floating channel designed for bootstrap operation that is fully operational to +200 V, tolerance to negative transient voltages with dV/dt immunity, and independent logic inputs compatible with CMOS or LSTTL output down to 3.0 V logic. The high pulse current buffer stage minimizes driver cross-conduction, while matched propagation delays simplify high-frequency design. The floating high-side channel can drive an N-channel power MOSFET configured in the high-side position of a half-bridge.
Typical applications include DC-DC converters, motor drive half-bridges, electronic ballasts for lighting, and Class D audio amplifiers. The IR2011STRPBF is well-suited for any topology requiring high-side/low-side drive with up to 200 V bus voltage and switching frequencies up to several hundred kHz.
When designing with the IR2011, a bootstrap diode and capacitor network is required for the high-side supply. Ensure the bootstrap capacitor is sized to maintain VBS above the undervoltage lockout threshold under worst-case duty cycle and load conditions.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IR2011STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IR2011STRPBF (same form factor and footprint) β differing in Package, Configuration, Number of Outputs, RoHS Status, Input Logic Compatibility.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR2011SPBF
β Drop-Inβ In Stock
$1.18 / Unit
View Datasheet βIRS2011STRPBF
β Drop-Inβ In Stock
$1.55 / Unit
View Datasheet βIR2104STRPBF
β Drop-Inβ In Stock
$0.59 / Unit
View Datasheet βIRS2104STRPBF
β Drop-Inβ In Stock
$0.45 / Unit
View Datasheet βNCP5106BDR2G
β Drop-Inπ Reference alternative (not in catalog)
L6384ED013TR
β Drop-Inπ Reference alternative (not in catalog)
IR2011STRPBF Maximum Ratings & Electrical Characteristics
| Configuration | High-Side and Low-Side (Independent) |
| Number of Drivers | 2 (Half-Bridge) |
| Peak Source Current | 1 A (typical) |
| Peak Sink Current | 1 A (typical) |
| Gate Drive Supply Voltage (VCC) | 10 V to 20 V |
| Floating Supply Voltage (VBS) | 10 V to 20 V (operational to +200 V) |
| Logic Input Compatibility | 3.0 V CMOS or LSTTL |
| Propagation Delay (typ.) | 80 ns |
| Turn-On Rise Time (typ.) | 35 ns |
| Turn-Off Fall Time (typ.) | 20 ns |
| Offset Voltage Rating | 200 V |
| Negative Transient Tolerance | dV/dt immune |
| Operating Temperature | -40 C to +125 C |
| Package | 8-SOIC (3.90 mm body width) |
| Mounting Type | Surface Mount |
| Lead-Free / RoHS | Lead-Free, RoHS Compliant |
IR2011STRPBF Pin Configuration
| Pin 1 | VCC β Logic and low-side gate drive supply (10 V to 20 V) |
| Pin 2 | HIN β Logic input for high-side gate driver (CMOS/LSTTL compatible) |
| Pin 3 | LIN β Logic input for low-side gate driver (CMOS/LSTTL compatible) |
| Pin 4 | GND β Logic and low-side ground reference |
| Pin 5 | LO β Low-side gate drive output (1 A source/sink) |
| Pin 6 | VS β Floating supply return / high-side source connection |
| Pin 7 | HO β High-side gate drive output (1 A source/sink) |
| Pin 8 | VB β Floating supply for high-side gate drive (bootstrap) |
Typical Applications
IR2011STRPBF is suitable for 7 applications: DC-DC Half-Bridge Converters, Brushless DC Motor Drive Half-Bridges, Electronic Ballast and LED Drivers, Class D Audio Amplifier Output Stage, Solar Microinverter Half-Bridges, Industrial Welding and Plasma Cutters, Switched-Mode Power Supply (SMPS) Primary Side.
DC-DC Half-Bridge Converters
The IR2011STRPBF drives the high-side and low-side N-channel MOSFETs in 100W-500W DC-DC half-bridge and full-bridge converters. Its 200V floating channel rating covers 48V telecom bus systems, while 1A source/sink current rapidly switches MOSFETs with gate charge up to 50nC at frequencies up to 500kHz. Matched 80ns propagation delays simplify PWM timing in synchronous buck and boost topologies, minimizing deadtime losses. The 8-SOIC package fits compact converter PCB layouts alongside the power inductor and output capacitors.
Recommended
Brushless DC Motor Drive Half-Bridges
The IR2011STRPBF drives one phase of a 3-phase brushless DC (BLDC) motor drive in 24V-100V battery-powered systems. Its independent high-side and low-side logic inputs allow direct PWM control from a microcontroller or motor controller IC, while the 1A source/sink capability switches typical 100V MOSFETs at 25kHz-50kHz. The floating channel bootstrap operation supports high-side switching up to 200V bus, covering e-bike, power tool, and small EV traction applications with high efficiency and low switching losses.
Recommended
Electronic Ballast and LED Drivers
The IR2011STRPBF powers half-bridge resonant inverter stages in fluorescent electronic ballasts and high-power LED driver circuits. Its 200V rating covers rectified 120V AC mains, while the dV/dt-immune floating channel tolerates the fast voltage transitions of resonant tank circuits. The 1A peak current capability drives gate charges of typical MOSFETs in self-oscillating or controller-driven ballast designs at 40kHz-100kHz operating frequencies. The SOIC-8 package fits within compact ballast enclosures.
Recommended
Class D Audio Amplifier Output Stage
The IR2011STRPBF drives the complementary MOSFET pair in Class D audio amplifier output stages operating from +/-50V or 100V rails. Its matched 80ns propagation delays preserve audio fidelity by maintaining symmetric deadtime control, minimizing crossover distortion. The 1A source/sink current drives typical audio MOSFETs with gate charges up to 30nC at 250kHz-500kHz switching frequencies. According to the Infineon datasheet, the high pulse current buffer stage minimizes driver cross-conduction, reducing EMI emissions in audio applications.
Recommended
Solar Microinverter Half-Bridges
The IR2011STRPBF drives the primary-side half-bridge in isolated solar microinverters operating from 30V-100V PV panel inputs. Its floating channel supports high-side switching required by push-pull and full-bridge inverter topologies, while the 200V rating provides headroom for 100V panel systems. The 1A peak current drives MOSFETs in high-frequency transformer-isolated inverter stages at 50kHz-200kHz, enabling compact microinverter designs with high conversion efficiency above 95%.
Recommended
Industrial Welding and Plasma Cutters
The IR2011STRPBF drives inverter stages in low-power industrial welding and plasma cutting equipment operating below 200V bus. Its dV/dt-immune floating channel tolerates the harsh switching transients of arc-load power stages, while 1A source/sink current handles the high gate charge of IGBTs used in welding inverter modules. The matched propagation delays simplify synchronized switching in half-bridge and full-bridge inverter topologies operating at 20kHz-100kHz for compact, portable welding equipment.
Recommended
Switched-Mode Power Supply (SMPS) Primary Side
The IR2011STRPBF drives the primary-side half-bridge in sub-200V SMPS applications including industrial auxiliary supplies and battery chargers. Its 200V floating channel rating covers rectified 120V AC mains with sufficient margin, while the bootstrap-compatible design supports continuous high-side switching. The 1A peak current capability switches typical 200V MOSFETs at 100kHz-500kHz, enabling compact, high-density power supply designs with high conversion efficiency and low standby power consumption.
Recommended
Recommended Products Summary
Engineering reference data for IR2011STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2011SPBF | IR2104STRPBF | NCP5106BDR2G | L6384ED013TR |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | onsemi | STMicroelectronics |
| Package | 8-SOIC | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| Configuration | Half-Bridge (HS+LS) | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge |
| Offset Voltage Rating (VBS) | 200 V | 200 V | 600 V | 600 V | 600 V |
| Gate Drive Supply (VCC) | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Peak Source/Sink Current | 1 A / 1 A | 1 A / 1 A | 1 A / 1 A | 0.25 A / 0.5 A | 0.4 A / 0.65 A |
| Deadtime Control | External (matched delays) | External | Internal | External | External |
| Logic Input Threshold | 3.0 V compatible | 3.0 V compatible | 3.0 V compatible | 3.0 V compatible | 3.0 V compatible |
Key Differentiators
- Highest peak source/sink current in its voltage class (vs NCP5106BDR2G)
- Matched propagation delays simplify high-frequency design (vs IR2104STRPBF)
- Lower-voltage rating provides cost advantage in sub-200V applications (vs L6384ED013TR)
- Independent logic inputs enable flexible control (vs IR2104STRPBF)
Design Notes
The IR2011STRPBF requires a bootstrap diode and capacitor network to generate the floating VBS supply for the high-side gate driver. According to the Infineon datasheet typical application circuit, use a fast-recovery diode (such as the UF4007 or similar) and a ceramic capacitor of at least 0.1 uF in parallel with a larger bulk capacitor (1 uF to 10 uF). The bootstrap capacitor must be sized to maintain VBS above the UVLO threshold (typically 8 V) under worst-case duty cycle. Refreshing occurs during low-side on-time; for continuous high-side operation at 100% duty cycle, use a charge pump or isolated supply instead.
Place the IR2011STRPBF as close as possible to the gates of the driven MOSFETs/IGBTs to minimize gate-drive loop inductance. According to the Infineon layout guidelines, use a wide ground plane under the driver and connect VS directly to the source of the high-side switch. Keep the gate drive traces short and use a star-ground connection at the driver's GND pin to isolate switching currents from logic signals. Place the VCC bypass capacitor (100 nF ceramic) within 5 mm of the VCC pin.
For half-bridge layouts using the IR2011STRPBF, ensure proper isolation between the high-side floating ground (VS) and the low-side ground (GND). The two grounds are at very different voltage potentials when the high-side switch is on. Use separate ground planes or guard traces if signal-level routing must cross these regions. According to the datasheet, the floating channel is dV/dt immune, but maintaining >5 mm creepage distance between high-side and low-side traces improves long-term reliability under high-humidity conditions.
Common pitfalls when using the IR2011STRPBF include: (1) exceeding the 200 V VBS offset rating when switching high-voltage buses, (2) failing to provide sufficient deadtime causing shoot-through, and (3) undersizing the bootstrap capacitor causing high-side UVLO at high duty cycles. Estimated: at 100 kHz switching with 50% duty cycle and 100 nC MOSFET gate charge, a 1 uF bootstrap capacitor provides approximately 10x margin above the UVLO threshold. Use proper gate resistors (10-100 ohm) to control switching speed and limit ringing.
Compliance Information
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100 qualified - not designed for automotive applications. Halogen-free per Infineon green product designation.
