IRF1310NSTRLPBF vs IRF3205STRLPBF Comparison
Detailed side-by-side comparison of IRF1310NSTRLPBF by Infineon and IRF3205STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF1310NSTRLPBF | IRF3205STRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.84 | $1.02 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25C | 42 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | 73.3 nC | 97.3 nC typical |
| Power Dissipation (PD) at TC=25C | 160 W | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Operating Temperature Range | -55C to +175C | -55 Β°C to +175 Β°C (Tj) |
| Package | D2PAK (TO-263AB) | TO-263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | IR MOSFET (HEXFET) | HEXFET (advanced process) |
| Built-in Diode | Yes (intrinsic body diode) | β |
| Lead-Free / RoHS | Yes (PBF suffix) | β |
| Configuration | Single with built-in diode | β |
| Polarity | β | N-Channel |
| MOSFET Operating Mode | β | Enhancement |
| Drain-Source Voltage (Vdss) | β | 55 V |
| Continuous Drain Current (Id) @ Tc=25Β°C | β | 110 A |
| Pulsed Drain Current (Idm) | β | 390 A |
| Static Drain-Source On-Resistance (Rds(on)) | β | 8 mΞ© max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | β | 2.0 V to 4.0 V |
| Power Dissipation (Pd) @ Tc=25Β°C | β | 200 W |
| Lead-Free / RoHS Status | β | Lead-Free / RoHS Compliant (PBF suffix) |
| Packaging | β | Tape & Reel (STRL) |