IRF3205STRLPBF - 55V 110A N-Ch HEXFET MOSFET | Infineon
MPN: IRF3205STRLPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.35 | $135.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.02 | $1,020.00 |
IRF3205STRLPBF Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between the drain and source terminals. Within the broader taxonomy, this part is an N-channel enhancement-mode MOSFET, a subset of power discrete semiconductors and the fundamental switching element in switched-mode power supplies, motor drives, and high-current load switches. HEXFET is Infineon's (formerly International Rectifier's) trade name for its proprietary vertical-diffused power MOSFET cell structure, which reduces on-resistance per unit area by stacking thousands of parallel cells.
Key features include a logic-level compatible gate threshold (Vgs(th) typically 2.0-4.0V), avalanche-rated ruggedness, fast intrinsic body diode for switching converter rectification, and a TO-263-3 (D2PAK) surface-mount footprint with an exposed metal tab that doubles as the drain connection and primary thermal dissipation path. The 'STRL' suffix denotes Tape-and-Reel packaging, and the 'PBF' suffix indicates lead-free (Pb-free) terminal plating compliant with RoHS directives.
Typical applications include DC motor drives (12V/24V/48V), synchronous-rectifier stages in SMPS, solenoid and relay drivers, battery protection circuits, high-current LED drivers, audio amplifier output stages, and automotive 12V/24V bus switches. The D2PAK footprint allows high-power dissipation without the through-hole mounting required by TO-220 devices, enabling denser PCB designs.
When designing with this MOSFET, ensure the gate driver can source/sink sufficient peak current (Qg = 97.3 nC typical) to achieve fast switching transitions and minimize switching losses. The exposed metal tab must be soldered to a sufficient copper pour area on the PCB to keep the junction temperature below 175°C at full load.
Drop-in alternatives for IRF3205STRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF3205STRLPBF (same form factor and footprint) — differing in Package, Technology, Avalanche Rated, Drain-Source Voltage (VDS), Operating Junction Temperature.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF3205SPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF3205ZPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB3207ZPBF
✅ Drop-In✓ In Stock
$1.62 / Unit
View Datasheet →IRF1310NSTRLPBF
✅ Drop-In✓ In Stock
$0.84 / Unit
View Datasheet →IRF4905LPBF
✅ Drop-In✓ In Stock
$0.98 / Unit
View Datasheet →IRFB4020PBF
✅ Drop-In✓ In Stock
$1.38 / Unit
View Datasheet →IRL3705NPBF
✅ Drop-In✓ In Stock
$0.92 / Unit
View Datasheet →IRLL024ZTRPBF
✅ Drop-In✓ In Stock
$0.46 / Unit
View Datasheet →IRF3205STRLPBF Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| MOSFET Operating Mode | Enhancement |
| Drain-Source Voltage (Vdss) | 55 V |
| Continuous Drain Current (Id) @ Tc=25°C | 110 A |
| Pulsed Drain Current (Idm) | 390 A |
| Static Drain-Source On-Resistance (Rds(on)) | 8 mΩ max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | 97.3 nC typical |
| Power Dissipation (Pd) @ Tc=25°C | 200 W |
| Operating Temperature Range | -55 °C to +175 °C (Tj) |
| Package | TO-263-3 (D2PAK) |
| Mounting Type | Surface Mount |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant (PBF suffix) |
| Technology | HEXFET (advanced process) |
| Packaging | Tape & Reel (STRL) |
IRF3205STRLPBF Pin Configuration
| Pin 1 | Gate — Gate control input (logic-level compatible with proper Vgs drive) |
| Pin 2 | Drain — Drain terminal (also connected to metal tab on back) |
| Pin 3 | Source — Source terminal (reference for gate drive) |
Safe Operating Area (SOA)
Typical Applications
IRF3205STRLPBF is suitable for 7 applications: Brushed DC Motor Drive (12V/24V/48V), Synchronous Rectifier in SMPS, Battery Protection and Load Switch, Automotive 12V/24V Solenoid and Relay Driver, High-Power LED Lighting Driver, Power Inverter and Audio Amplifier Output Stage, Solar Charge Controller and MPPT Switching.
Brushed DC Motor Drive (12V/24V/48V)
The IRF3205STRLPBF is widely deployed as the low-side switch in brushed DC motor drive circuits for robotics, industrial automation, and electric vehicles. Its 55V Vdss comfortably exceeds 48V bus transients, and the 8 mΩ Rds(on) minimizes conduction losses when driving 30-70A continuous motor currents. The HEXFET process provides rugged avalanche energy absorption for the inductive kickback that occurs when the motor is de-energized, allowing the part to absorb the flyback pulse without an external TVS clamp in many designs. Compared to using multiple smaller MOSFETs in parallel, a single IRF3205STRLPBF simplifies gate drive and reduces PCB footprint, while the D2PAK exposed tab provides ample thermal dissipation when soldered to a 1-2 square-inch copper pour. Engineers should still add a flyback diode across the motor terminals for maximum reliability under stalled-rotor conditions.
Recommended
Synchronous Rectifier in SMPS
In isolated and non-isolated switched-mode power supplies, the IRF3205STRLPBF serves as the synchronous rectifier MOSFET on the secondary side, replacing lossy Schottky diodes. With Rds(on) of 8 mΩ, conduction losses at 30A output current are approximately 7.2W per device, far lower than equivalent Schottky forward-conduction losses at high current. The 97.3 nC total gate charge is acceptable for frequencies up to about 100 kHz, making the IRF3205STRLPBF suitable for medium-frequency DC-DC converters used in telecom, server, and industrial power systems. Designers should pair it with a dedicated synchronous-rectifier controller IC to handle the critical timing of the body-diode commutation and prevent cross-conduction with the primary-side switch.
Recommended
Battery Protection and Load Switch
The IRF3205STRLPBF is commonly used as the high-current disconnect switch in 12V/24V lead-acid and lithium battery management systems, including e-bike, solar, and UPS applications. Its low Rds(on) of 8 mΩ means that at 100A continuous current the voltage drop is only 0.8V and power dissipation is 80W, requiring substantial PCB copper heatsinking. The 55V Vdss handles automotive load-dump transients up to 40V when paired with a TVS clamp. In lithium battery packs the IRF3205STRLPBF serves as the low-side FET in the protection circuit, where its low Rds(on) reduces thermal stress during sustained discharge currents of 50-100A. The device's avalanche rating provides additional robustness against reverse-battery and inductive kickback fault events.
Recommended
Automotive 12V/24V Solenoid and Relay Driver
The IRF3205STRLPBF is well suited as a low-side driver for automotive solenoids, fuel injectors, relays, and lamp loads. Its 55V Vdss rating provides excellent transient margin on the 12V/24V automotive bus, where load-dump transients can reach 35-40V. The 110A continuous current rating supports high-inrush loads such as starter solenoids and glow plugs. The HEXFET avalanche capability allows the device to absorb the inductive kickback of solenoids without external clamping, simplifying the design and reducing BOM cost. When used as a body-control load switch, the part can directly replace electromechanical relays, providing silent, arc-free switching with PWM dimming capability for lamp loads.
Recommended
High-Power LED Lighting Driver
In high-bay industrial LED lighting, stadium lighting, and automotive headlight applications, the IRF3205STRLPBF serves as the main switching element in constant-current LED driver circuits operating at input voltages of 12-48V. Its 55V Vdss and 110A current rating easily handle the 5-20A typical LED string currents with substantial margin. When configured as a linear current regulator the part dissipates the difference between input voltage and LED forward voltage, but its low Rds(on) minimizes self-heating. For PWM dimming applications, the fast switching speed of the HEXFET process supports dimming frequencies up to several kHz, enabling high-resolution brightness control without visible flicker.
Recommended
Power Inverter and Audio Amplifier Output Stage
The IRF3205STRLPBF has a long history as the output stage N-channel device in class-D audio amplifiers and low-frequency power inverters. Its 8 mΩ Rds(on) minimizes conduction losses at high audio currents, and the HEXFET process provides the ruggedness required to survive repetitive short-circuit events typical of amplifier output stages. In inverter applications, two IRF3205STRLPBF devices form a half-bridge switching stage with the IRF4905LPBF as the complementary P-channel high-side device for low-power designs, or two IRF3205STRLPBFs in a half-bridge with a gate-driver bootstrap supply. The D2PAK footprint allows efficient thermal dissipation directly to the chassis or aluminum heatsink, critical in compact amplifier designs.
Recommended
Solar Charge Controller and MPPT Switching
In solar photovoltaic charge controllers, the IRF3205STRLPBF functions as the main switching element in buck or buck-boost topologies implementing Maximum Power Point Tracking (MPPT). With solar panel open-circuit voltages typically in the 30-50V range for 24V battery systems, the 55V Vdss rating provides safe operating margin. The low Rds(on) of 8 mΩ reduces conduction losses that would otherwise erode the MPPT efficiency gain, which is critical in solar applications where every percentage point of energy harvest matters. The HEXFET process handles the high peak currents seen when switching from MPPT-tracking operation into battery-charging mode. For higher-voltage 48V battery systems with Voc up to 80V panels, designers should upgrade to the IRFB3207ZPBF (75V) instead.
Recommended
Recommended Products Summary
Engineering reference data for IRF3205STRLPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF3205SPBF | IRF3205ZPBF | IRFB3207ZPBF | IRF1310NSTRLPBF | IRL3705NPBF |
|---|---|---|---|---|---|---|
| Package | TO-263-3 (D2PAK) | TO-263-3 (D2PAK) - same | TO-263-3 (D2PAK) - same | TO-263-3 (D2PAK) - same | TO-263-3 (D2PAK) - same | TO-263-3 (D2PAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Vdss (Drain-Source Voltage) | 55 V | 55 V | 55 V | 75 V | 100 V | 55 V |
| Technology | HEXFET | HEXFET | HEXFET | HEXFET | HEXFET | HEXFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
Key Differentiators
- Industry-standard reference part with longest production history (vs IRF3205ZPBF)
- Higher current rating at lower cost than newer alternatives (vs IRF1310NSTRLPBF)
- Complementary P-channel variant available in same package (vs IRF4905LPBF)
Design Notes
Estimated: At full 110A continuous drain current, the conduction loss is approximately I² × Rds(on) = 110² × 0.008 = 96.8W. The D2PAK package has a junction-to-ambient thermal resistance of approximately 40-62 °C/W depending on copper-pour area. At 100W dissipation with 1 sq-inch of copper, junction temperature rise above ambient would exceed 4000°C, which is impossible — therefore the device MUST be heatsinked or operated well below 110A. Practical continuous current at 25°C ambient with a properly heatsinked D2PAK is typically 30-50A to keep Tj below 125°C. Always compute Pd = Id² × Rds(on) × (1.3 thermal de-rating factor) and verify Tj = Ta + Pd × RθJA stays below 125°C for reliability.
The D2PAK metal tab is electrically connected to the drain terminal (Pin 2). Therefore the PCB copper pour that heatsinks the device is at drain potential, not ground. This must be accounted for in PCB layout — the heatsink copper cannot touch a grounded heatsink without insulating material. Use thermal vias under the D2PAK tab to transfer heat to inner PCB copper layers, and stitch multiple vias in parallel for low thermal resistance. Recommended copper-pour area is at least 1 sq-inch on the top layer plus 2-3 oz copper on inner layers connected via 4x to 9x thermal vias of 0.3mm drill diameter.
Do not drive the gate with insufficient gate-source voltage. While the threshold Vgs(th) is 2-4V, full enhancement to the datasheet Rds(on) of 8 mΩ requires Vgs ≥ 10V. Driving at Vgs = 5V can result in Rds(on) 2-3x higher than specified, dramatically increasing conduction losses. Add a gate-source resistor (10-100 kΩ) directly across the gate-source terminals to prevent inadvertent turn-on from dv/dt-induced Miller coupling. For switching applications above 50 kHz, place a dedicated gate-driver IC between the MCU PWM output and the gate pin to provide sufficient peak gate current (Qg / trise) for fast switching transitions.
Minimize the source-inductance loop between the source pin, gate-driver ground, and the load. Source inductance creates a negative feedback voltage during switching that slows turn-on and can cause parasitic oscillations. Keep the gate-drive return trace short and wide, ideally directly from the source pin to the gate-driver ground pin, with the gate-drive loop area kept below 0.5 cm². Place input bypass capacitors as close as possible to the drain-source loop to reduce high-frequency ringing and EMI.
Compliance Information
RoHS compliant per Infineon product page; lead-free (Pb-free) confirmed by 'PBF' suffix in MPN. Not AEC-Q100 qualified — for AEC-Q100 automotive applications, refer to the IRF3205STRLPBF-Q1 suffix variant if available, or use an AEC-Q100-qualified alternative.
