IRF3205STRLPBF vs IRFB4020PBF Comparison
Detailed side-by-side comparison of IRF3205STRLPBF by Infineon and IRFB4020PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF3205STRLPBF | IRFB4020PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $1.38 |
| Polarity | N-Channel | β |
| MOSFET Operating Mode | Enhancement | β |
| Drain-Source Voltage (Vdss) | 55 V | β |
| Continuous Drain Current (Id) @ Tc=25Β°C | 110 A | β |
| Pulsed Drain Current (Idm) | 390 A | β |
| Static Drain-Source On-Resistance (Rds(on)) | 8 mΞ© max @ Vgs=10V | β |
| Gate-Source Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | β |
| Total Gate Charge (Qg) | 97.3 nC typical | β |
| Power Dissipation (Pd) @ Tc=25Β°C | 200 W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (Tj) | β |
| Package | TO-263-3 (D2PAK) | TO-220AB (through-hole) |
| Mounting Type | Surface Mount | Through Hole |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant (PBF suffix) | β |
| Technology | HEXFET (advanced process) | IR MOSFET (HEXFET) |
| Packaging | Tape & Reel (STRL) | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 200 V |
| Continuous Drain Current (ID) at TC | β | 18 A |
| Power Dissipation (PD) at TC | β | 100 W |
| RDS(on) Maximum | β | 100 mOhm |
| Gate-Source Voltage (VGS) Maximum | β | 20 V |
| Thermal Resistance, Junction-to-Case (RthJC) | β | 1.43 C/W |
| Operating Junction Temperature | β | 175 C (max) |
| Pin Count | β | 3 (Gate, Drain, Source) |
| Lead-Free (PbF suffix) | β | Yes |
| Market Qualification | β | Consumer |
| Recommended Use | β | Class-D audio amplifier and high-efficiency switching applications |