IRF3205STRLPBF vs IRL3705NPBF Comparison
Detailed side-by-side comparison of IRF3205STRLPBF by Infineon and IRL3705NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF3205STRLPBF | IRL3705NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $0.92 |
| Polarity | N-Channel | β |
| MOSFET Operating Mode | Enhancement | β |
| Drain-Source Voltage (Vdss) | 55 V | β |
| Continuous Drain Current (Id) @ Tc=25Β°C | 110 A | β |
| Pulsed Drain Current (Idm) | 390 A | β |
| Static Drain-Source On-Resistance (Rds(on)) | 8 mΞ© max @ Vgs=10V | β |
| Gate-Source Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | β |
| Total Gate Charge (Qg) | 97.3 nC typical | β |
| Power Dissipation (Pd) @ Tc=25Β°C | 200 W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (Tj) | β |
| Package | TO-263-3 (D2PAK) | TO-220AB (3-pin through-hole) |
| Mounting Type | Surface Mount | Through Hole |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant (PBF suffix) | β |
| Technology | HEXFET (advanced process) | HEXFET (planar cell, fifth generation) |
| Packaging | Tape & Reel (STRL) | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 55 V |
| Continuous Drain Current (I_D) at Tc | β | 89 A |
| Pulsed Drain Current | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (P_D) at Tc | β | 170 W |
| On-Resistance R_DS(on) | β | 10 mOhm (typical, V_GS = 5 V) |
| Gate Threshold V_GS(th) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | β | 65.3 nC |
| Maximum Junction Temperature | β | 175 C |
| Gate Drive Level | β | Logic-level |
| Avalanche Rated | β | Yes (ruggedized single-pulse avalanche) |
| Lead-Free (PBF suffix) | β | Yes |
| RoHS Status | β | Compliant (per PBF suffix) |