IRF3205STRLPBF vs IRLL024ZTRPBF Comparison

Detailed side-by-side comparison of IRF3205STRLPBF by Infineon and IRLL024ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF3205STRLPBF IRF3205STRLPBF - 55V 110A N-Ch HEXFET MOSFET | Infineon

IRF3205STRLPBF - 55V 110A N-Ch HEXFET MOSFET | Infineon

IRF3205STRLPBF βœ“ Active

Specification Comparison

Parameter IRF3205STRLPBF IRLL024ZTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.02 $0.46
Polarity N-Channel β€”
MOSFET Operating Mode Enhancement β€”
Drain-Source Voltage (Vdss) 55 V β€”
Continuous Drain Current (Id) @ Tc=25Β°C 110 A β€”
Pulsed Drain Current (Idm) 390 A β€”
Static Drain-Source On-Resistance (Rds(on)) 8 mΞ© max @ Vgs=10V β€”
Gate-Source Threshold Voltage (Vgs(th)) 2.0 V to 4.0 V β€”
Total Gate Charge (Qg) 97.3 nC typical β€”
Power Dissipation (Pd) @ Tc=25Β°C 200 W β€”
Operating Temperature Range -55 Β°C to +175 Β°C (Tj) β€”
Package TO-263-3 (D2PAK) SOT-223 (TO-261-4)
Mounting Type Surface Mount Surface Mount
Lead-Free / RoHS Status Lead-Free / RoHS Compliant (PBF suffix) β€”
Technology HEXFET (advanced process) HEXFET Power MOSFET (trench-gate)
Packaging Tape & Reel (STRL) β€”
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
FET Type β€” N-Channel enhancement-mode
Drain-Source Voltage (VDS) max β€” 55 V
Gate-Source Voltage (VGS) max β€” Β±16 V
Continuous Drain Current (ID) at TC=25Β°C β€” 5 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V β€” 60 mΞ©
Gate Threshold Voltage (VGS(th)) β€” 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO)
Total Gate Charge (Qg) typical β€” 7 nC
Power Dissipation (PD) at TA=25Β°C β€” 1 W
Operating Junction Temperature (TJ) β€” -55 Β°C to +150 Β°C
MSL Level β€” 1 (unlimited floor life)
RoHS Status β€” Compliant

Datasheets & Resources

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