IRF3710STRLPBF vs IRFZ48NSTRLPBF Comparison

Detailed side-by-side comparison of IRF3710STRLPBF by Infineon and IRFZ48NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF3710STRLPBF IRFZ48NSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.23 $1.18
FET Type N-Channel N-Channel Power MOSFET
Technology HEXFET / IR MOSFET (planar) β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID, Tc=25 C) 57 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max 23 mOhm β€”
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] β€”
Total Gate Charge (Qg) 86.7 nC 54 nC
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Power Dissipation (PD, Tc=25 C) 200 W β€”
Operating Temperature Range -55 C to +175 C β€”
Package D2PAK (TO-263), surface mount D2PAK (TO-263) Surface Mount
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant (Pb-free) Compliant
Lead-Free Yes β€”
Tape & Reel Orientation TRL (left) β€”
Drain-to-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) @ Tc=25C β€” 64 A
Static Drain-to-Source On-Resistance (Rds(on)) β€” 14 mΞ© at VGS = 10 V
Gate-to-Source Threshold Voltage (VGS(th)) β€” 2.0 V to 4.0 V
Gate-to-Source Voltage (VGS) max β€” Β±20 V
Power Dissipation (Pd) @ Tc=25C β€” 130 W
Power Dissipation (Pd) @ Ta=25C on FR-4 β€” 3.8 W
Operating Junction Temperature β€” -55C to +175C
Packaging β€” Tape & Reel (13-inch reel, TRL)
Lead Finish β€” Lead-free (PBF) matte tin
Technology Family β€” HEXFET advanced process technology

Datasheets & Resources

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