IRFZ48NSTRLPBF - 55V 64A N-Ch MOSFET, 14mΩ D2PAK | Infineon
MPN: IRFZ48NSTRLPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2 | $2.00 |
| 10 | $1.85 | $18.50 |
| 100 | $1.62 | $162.00 |
| 500 | $1.41 | $705.00 |
| 1,000 | $1.18 | $1,180.00 |
IRFZ48NSTRLPBF Overview
A power MOSFET is a voltage-controlled semiconductor switch in which the gate field modulates a conduction channel between source and drain. The IRFZ48N belongs to Infineon's HEXFET power MOSFET family, which in turn is part of the broader discrete power semiconductor hierarchy: MOSFET -> power transistor -> discrete semiconductor -> power management component. Its low Rds(on) and high current rating make it a fundamental building block for DC-DC conversion, motor drive, and load switching where efficient low-side or high-side switching is required.
Key electrical characteristics include a maximum drain-to-source voltage of 55 V, continuous drain current of 64 A at 25°C case temperature, pulsed drain current of approximately 220 A, and a static drain-to-source on-resistance of 14 mΩ at VGS = 10 V. The device is fully enhanced at VGS(th) of 2.0 V to 4.0 V, supports standard 10 V gate drive, and integrates an intrinsic body diode for inductive switching. Power dissipation is rated 3.8 W on the FR-4 board (Ta) and 130 W at the case (Tc).
The internal architecture uses a planar stripe DMOS cell with a vertical drain structure that maximizes silicon area utilization and minimizes on-state losses. The 14 mΩ Rds(on) and 54 nC Qg trade-off is balanced for mid-frequency PWM applications (typically below 200 kHz), giving a Figure-of-Merit that suits continuous-conduction synchronous rectification, class-D audio output stages, and battery-protection switching.
Typical applications include brushed DC motor drive, high-current synchronous rectification in secondary-side SMPS, solenoid and relay drivers, LED driving arrays, reverse-polarity battery protection, and automotive body-electronics switching. The D2PAK footprint is a drop-in compatible upgrade path for designs originally built around the TO-220 through-hole IRFZ48N.
When laying out the PCB, use a substantial copper pour on the drain tab (the metal tab is the drain) for both thermal dissipation and short-loop current return. Keep the gate loop area as small as possible, use a 10 Ω to 100 Ω gate resistor to suppress ringing, and ensure the source-sense return is shared with the gate driver ground to prevent dv/dt-induced turn-on.
This page synthesizes distributor stock data, drop-in alternatives, and PCB-layout guidance not found in the standalone datasheet.
Drop-in alternatives for IRFZ48NSTRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFZ48NSTRLPBF (same form factor and footprint) — differing in Technology, Package, Total Gate Charge (Qg), FET Type, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFZ48NSTRRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRLZ44NSTRLPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFR2405TRLPBF
✅ Drop-In✓ In Stock
$0.55 / Unit
View Datasheet →IRLR3636TRPBF
✅ Drop-In✓ In Stock
$2.38 / Unit
View Datasheet →IRLR3636TRLPBF
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →IRLR3410TRPBF
✅ Drop-In✓ In Stock
$0.81 / Unit
View Datasheet →IRFZ24NPBF
✅ Drop-In✓ In Stock
$0.46 / Unit
View Datasheet →IRFZ48NSTRLPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel Power MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) @ Tc=25C | 64 A |
| Static Drain-to-Source On-Resistance (Rds(on)) | 14 mΩ at VGS = 10 V |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | 54 nC |
| Gate-to-Source Voltage (VGS) max | ±20 V |
| Power Dissipation (Pd) @ Tc=25C | 130 W |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | 3.8 W |
| Operating Junction Temperature | -55C to +175C |
| Package | D2PAK (TO-263) Surface Mount |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (13-inch reel, TRL) |
| Lead Finish | Lead-free (PBF) matte tin |
| RoHS Status | Compliant |
| Technology Family | HEXFET advanced process technology |
IRFZ48NSTRLPBF Pin Configuration
| Pin 1 | Gate — Gate terminal - control input, VGS drive |
| Pin 2 | Drain — Drain terminal (also connected to metal tab) |
| Pin 3 | Source — Source terminal - power return |
| Pin 4 | Tab — Drain (electrically connected to pin 2) - heatsink tab |
Typical Applications
IRFZ48NSTRLPBF is suitable for 6 applications: Brushed DC Motor Drive (12V/24V), Synchronous Rectification in SMPS, Reverse-Polarity Battery Protection, Class-D Audio Output Stage, Solenoid and Relay Driver, Automotive Body Electronics Switching.
Brushed DC Motor Drive (12V/24V)
The IRFZ48NSTRLPBF is well suited for brushed DC motor drive in 12 V and 24 V systems, where its 64 A continuous drain current (Tc=25°C) handles motor stall in-rush and its 14 mΩ Rds(on) at VGS=10 V minimizes conduction loss during PWM control. Placed as a low-side switch between motor terminal and ground, it is driven by a gate driver IC such as the IRS2109STRPBF at 1-20 kHz PWM with a 10 Ω gate resistor; the low 54 nC Qg ensures fast switching without excessive gate-driver losses. Compared to a TO-220 IRFZ48N, the D2PAK surface-mount version enables direct PCB-mount cooling through the drain tab into the copper pour, reducing thermal resistance on a 2 oz copper layout to roughly 35°C/W.
Recommended
Synchronous Rectification in SMPS
In secondary-side synchronous rectification of 12 V output SMPS and 24 V telecom bus converters, the IRFZ48NSTRLPBF replaces a Schottky rectifier to improve efficiency by 2-4%. With Rds(on) of 14 mΩ and 54 nC Qg, it suits CCM operation up to roughly 100 kHz before switching losses dominate. Driven by a synchronous-rectifier controller such as the IR1161 or by a fixed-deadtime gate signal from the primary-side controller, the MOSFET must have a body diode capable of handling the dead-time commutation - the IRFZ48N's intrinsic body diode is rated for the full 64 A continuous. Use a Schottky co-pack or RC snubber across drain-source to limit reverse-recovery spikes.
Recommended
Reverse-Polarity Battery Protection
Used as a high-side P-channel substitute or as a low-side N-channel disconnect switch in 12 V / 24 V battery protection circuits, the IRFZ48NSTRLPBF provides a low-resistance disconnect path (14 mΩ) and handles in-rush from capacitor banks. In a low-side N-channel configuration, a charge pump such as the LT3482 or BCR431UXTSA1 generates the 10 V gate drive above battery positive to fully enhance the MOSFET; in high-side P-channel designs, the IRFZ48N is replaced by a P-channel part. The MOSFET's 175°C maximum junction temperature supports automotive under-hood environments, and its 55 V VDS rating tolerates load-dump transients up to 35 V (per ISO 7637-2 with TVS clamp).
Recommended
Class-D Audio Output Stage
In 100 W to 300 W class-D audio amplifiers, the IRFZ48NSTRLPBF serves as the output-side half-bridge switch, where its 14 mΩ Rds(on) and 64 A peak current drive a 4 Ω or 8 Ω loudspeaker load. Driven by a gate driver such as the IRS2092 or IRS2153DSTRPBF at 250-400 kHz PWM, the MOSFET's low Qg of 54 nC keeps switching losses to under 5 W per channel at full output. Compared to older IRF540N parts, the IRFZ48N delivers nearly 70% lower conduction loss - directly translating to higher amplifier efficiency and smaller heatsinks. Designers should add a small RC snubber across drain-source to suppress ringing in the LC output filter.
Recommended
Solenoid and Relay Driver
Industrial solenoid and relay drivers benefit from the IRFZ48NSTRLPBF's 64 A peak current capability and 14 mΩ Rds(on) to handle inductive kickback when de-energizing 24 V to 48 V coils. Placed as a low-side switch with a flyback diode across the solenoid, the MOSFET switches cleanly without arcing on the relay contacts; the 130 W power dissipation rating (Tc) gives ample thermal margin for continuous duty. The 175°C junction temperature rating supports industrial control cabinets at elevated ambient temperatures up to 85°C. Add a 10 Ω to 47 Ω gate resistor and a TVS diode across drain-source for robust EMI performance in factory environments.
Recommended
Automotive Body Electronics Switching
The IRFZ48NSTRLPBF supports 12 V automotive body-electronics loads such as headlamp relays, seat heaters, and blower motors where 55 V VDS rating handles load-dump transients and the 64 A rating covers cold-start in-rush. Although the part itself is not AEC-Q100 qualified, its Infineon HEXFET process technology is automotive-proven in similar SKUs; for strict AEC-Q100 requirements, use the IRFZ48NSTRLPBF in non-safety sub-systems. The D2PAK package is well suited for engine-control-unit (ECU) auxiliary outputs, where the metal-tab drain can be screwed to a heatsink for high-current loads above 30 A continuous.
Recommended
Recommended Products Summary
Engineering reference data for IRFZ48NSTRLPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFZ48NSTRRPBF | IRLZ44NSTRLPBF | IRFR2405TRLPBF | IRLR3636TRPBF | IRLR3410TRPBF | IRFZ24NPBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | DPAK (TO-252) - different footprint | DPAK (TO-252) - different footprint | DPAK (TO-252) - different footprint | TO-220AB - through-hole |
| VDS (max) | 55 V | 55 V | 55 V | 55 V | 60 V | 55 V | 55 V |
| Continuous Drain Current (Tc=25C) | 64 A | 64 A | 47 A | 56 A | 50 A | 40 A | 48 A |
| Lifecycle Status | Active | Obsolete (migrate to TRL) | Active | Active | Active | Active | Active |
| RoHS / Lead-free | Yes / Yes (PBF) | Yes / Yes (PBF) | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Key Differentiators
- Lowest Rds(on) at 55V VDS in D2PAK among Infineon HEXFET family (vs IRLZ44NSTRLPBF)
- Active production with broad distributor stock (vs IRFZ48NSTRRPBF)
- Higher continuous current vs DPAK alternatives (vs IRLR3636TRPBF (DPAK))
Design Notes
The D2PAK package dissipates up to 130 W at Tc=25°C, but on a standard FR-4 board the realistic power dissipation is limited to 3.8 W (Ta) due to RθJA. To exceed this, design the PCB copper pour on the drain tab as a top-side thermal land at least 1 square inch of 2 oz copper, with thermal vias to inner copper planes. Estimated: with 2 oz copper on a 1 sq inch top land, RθJA drops to ~35°C/W, allowing up to 4 W continuous at 25°C ambient with proper airflow. For continuous 100 W loads, attach an external heatsink with thermal compound.
Minimize the gate-drive loop area by placing the gate resistor and gate-driver IC as close to the gate pin as possible. Use a 10 Ω to 100 Ω gate resistor to dampen parasitic ringing; lower values give faster switching but higher EMI. The source-sense return must share the same ground path as the gate-driver ground - any inductance in the source path will cause voltage feedback that can falsely turn on the MOSFET during fast dv/dt transitions (Miller turn-on). Add a small RC snubber (10 Ω + 1 nF) across drain-source if ringing exceeds 20% of VDS.
Do not exceed VGS = ±20 V - use a Zener clamp (15 V) gate-to-source if the gate driver output can overshoot during switching transients. Avoid using the IRFZ48NSTRLPBF at VDS continuously above 48 V; the 55 V rating allows transient headroom but not sustained 55 V operation. The internal body diode is rated for average forward current, not repetitive peak - for high-frequency switching, ensure the body diode recovery time fits within the dead-time of the half-bridge; otherwise add an external Schottky co-pack.
Compliance Information
RoHS compliant per Infineon product page (lead-free matte-tin finish, PBF suffix). Not AEC-Q100 qualified - for automotive safety applications choose an AEC-Q100 part such as BTS6133DAUMA1. The Infineon part is part of the HEXFET advanced-process family.
