IRF5305PBF vs IRLB8748PBF Comparison
Detailed side-by-side comparison of IRF5305PBF by Infineon and IRLB8748PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF5305PBF | IRLB8748PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $0.68 |
| FET Type | P-Channel | β |
| Drain-to-Source Voltage (VDS) | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | -31 A | 92 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Maximum Power Dissition (PD) at TC=25C | 110 W | β |
| Gate-to-Source Voltage (VGS) max | Β±20 V | β |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | 60 mOhm (typical) | β |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A | [DATA_NEEDED: max RDS(on) at -10V] | β |
| Total Gate Charge (Qg) | 42 nC (typical) | 15 nC typical |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Turn-On Delay Time (td(on)) | [DATA_NEEDED: td(on)] | β |
| Turn-Off Delay Time (td(off)) | [DATA_NEEDED: td(off)] | β |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | β |
| Thermal Resistance, Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA] | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | TO-220AB (through-hole, 3-pin + tab) | β |
| Mounting Type | Through Hole | Through Hole |
| Lead-Free Plating (PBF suffix) | Yes (Pb-free) | β |
| RoHS Status | Compliant | Compliant (Pb-free PBF suffix) |
| Technology | HEXFET (planar DMOS) | β |
| Drain-Source Voltage (VDS) | β | 30 V |
| On-Resistance RDS(on) max at VGS=10V | β | 4.8 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | β | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typ | β | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD) at TC=25C | β | 75 W |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Package Type | β | TO-220AB through-hole |
| Technology Family | β | StrongIRFET / HEXFET |
| Channel Type | β | N-Channel |
| Logic-Level Gate Drive | β | Yes (optimized for 5V VGS) |
| Qualification Standard | β | JEDEC (Industrial market per datasheet) |