IRLB8748PBF - 30V 92A N-Channel StrongIRFET MOSFET | Infineon
MPN: IRLB8748PBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.62 | $1.62 |
| 10 | $1.32 | $13.20 |
| 100 | $0.98 | $98.00 |
| 500 | $0.79 | $395.00 |
| 1,000 | $0.68 | $680.00 |
IRLB8748PBF Overview
A power MOSFET is a voltage-controlled semiconductor switch that enables efficient high-frequency switching of electrical loads, serving as the core building block of DC-DC converters, motor drives, and load management systems. MOSFETs sit within the broader hierarchy of discrete semiconductors -> transistors -> power transistors -> power MOSFETs, and are preferred over bipolar transistors when switching speed, drive simplicity, and conduction efficiency matter.
Key features include a total gate charge of 15 nC typical, avalanche-rated ruggedness, and a maximum junction-to-ambient thermal resistance in the TO-220AB package. The StrongIRFET family trades slightly higher RDS(on) for substantially improved avalanche ruggedness and body-diode robustness, making this part ideal for applications with inductive loads and occasional transient stress.
Architecturally, the IRLB8748PBF uses a planar N-channel HEXFET cell structure optimized for very low on-state loss at high currents. The combination of logic-level VGS(th) and low Qg enables direct drive from a microcontroller GPIO or low-side gate driver IC, eliminating the need for a dedicated bootstrap or charge-pump supply.
Typical applications include high-current synchronous rectification in telecom and server DC-DC converters, UPS and inverter switching stages, motor drive H-bridges and half-bridges, and battery protection / load management in industrial power systems. The wide safe operating area also suits hot-swap and OR-ing applications.
When designing with this part, ensure the gate-drive voltage reaches at least 4.5V at the gate pin and account for the body diode's reverse-recovery characteristics in bridge topologies. Use a low-impedance gate return path and adequate heatsinking to keep Tj below 150C at full load.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design notes not found in the manufacturer datasheet, providing engineering context beyond the raw spec table for TO-220-AB power-MOSFET selection.
Drop-in alternatives for IRLB8748PBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRLB8748PBF (same form factor and footprint) — differing in Package, Technology, On-Resistance RDS(on) max at VGS=10V, Total Gate Charge (Qg), RoHS Status.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFB4321PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB4110PBF
✅ Drop-In✓ In Stock
$1.55 / Unit
View Datasheet →IRFZ48NPBF
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →IRF5305PBF
✅ Drop-In✓ In Stock
$0.51 / Unit
View Datasheet →IRFR2405TRPBF
✅ Drop-In✓ In Stock
$0.61 / Unit
View Datasheet →IRFB3806PBF
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IRLB8748PBF Maximum Ratings & Electrical Characteristics
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at TC=25C | 92 A |
| On-Resistance RDS(on) max at VGS=10V | 4.8 mOhm |
| Gate-Source Voltage (VGS) max | +/- 20 V |
| Total Gate Charge (Qg) | 15 nC typical |
| Power Dissipation (PD) at TC=25C | 75 W |
| Operating Temperature Range | -55C to +175C (junction) |
| Package Type | TO-220AB through-hole |
| Mounting Type | Through Hole |
| Technology Family | StrongIRFET / HEXFET |
| Channel Type | N-Channel |
| Logic-Level Gate Drive | Yes (optimized for 5V VGS) |
| RoHS Status | Compliant (Pb-free PBF suffix) |
| Qualification Standard | JEDEC (Industrial market per datasheet) |
IRLB8748PBF Pin Configuration
| Pin 1 | Gate — Gate control input; logic-level compatible (5V) |
| Pin 2 | Drain — Drain terminal (also connected to metal tab) |
| Pin 3 | Source — Source terminal and signal return for gate drive |
Safe Operating Area (estimated from datasheet family)
Typical Applications
IRLB8748PBF is suitable for 6 applications: High-Current Synchronous Rectification, UPS and Inverter Switching Stages, Motor Drive H-Bridge and Half-Bridge, Battery Protection and Hot-Swap Control, Industrial Load Switching, DC-DC Converter High-Side Switch.
High-Current Synchronous Rectification
The IRLB8748PBF is well-suited for synchronous rectification in 12V and 24V DC-DC converter stages where its 4.8 mOhm RDS(on) at VGS=10V minimizes conduction loss and improves overall efficiency versus Schottky diode solutions. With 92A continuous drain current, it can handle multi-kilowatt server and telecom rectifier outputs when paralleled. Logic-level 5V gate drive enables direct PWM control from a digital controller, eliminating the gate-drive losses that plague higher-threshold parts. The StrongIRFET body diode is rugged enough for the dead-time commutation stress typical in buck and forward converter topologies.
Recommended
UPS and Inverter Switching Stages
The IRLB8748PBF was explicitly optimized for UPS and inverter applications per its datasheet description. Its 30V VDS comfortably covers 24V battery bus rails, and the 92A continuous current rating supports multi-kVA inverter designs. The StrongIRFET cell structure delivers high avalanche energy capability, essential for handling the inductive kick-back from transformer leakage inductance during switching transitions. The 75W power dissipation at TC=25C allows the part to ride through brief overload conditions without immediate thermal shutdown, which is critical in inverter fault-clearance events.
Recommended
Motor Drive H-Bridge and Half-Bridge
In brushed-DC and BLDC motor drive H-bridges operating from 12V-24V, the IRLB8748PBF provides the high-side or low-side switch element with its 92A current rating and low 4.8 mOhm on-resistance. The logic-level gate threshold enables direct PWM drive from MCUs at 5V or 3.3V without bootstrap supply complications. The rugged body diode simplifies dead-time handling during PWM commutation. Designers should pair this part with complementary P-channel or higher-voltage N-channel MOSFETs on the opposing leg of the H-bridge.
Recommended
Battery Protection and Hot-Swap Control
The IRLB8748PBF is ideal for high-current battery protection FETs and hot-swap OR-ing applications in industrial battery packs. Its 30V VDS is sufficient for multi-cell Li-ion packs up to 7S nominal, and the 4.8 mOhm RDS(on) minimizes voltage drop during high-current discharge. The high avalanche rating protects against the inrush transients typical of capacitive loads on hot-plug events. In OR-ing configurations, paralleled parts provide both redundancy and lower effective on-resistance.
Recommended
Industrial Load Switching
For industrial solenoid, relay-replacement, and high-current load switching applications, the IRLB8748PBF offers a robust solution. Its 92A continuous rating handles large inrush currents from capacitors and motors, and the logic-level gate drive simplifies interface to PLC outputs and 5V microcontrollers. The TO-220AB package provides mechanical ruggedness and easy heatsink mounting, while the Infineon Industrial market qualification ensures long-term reliability in factory automation environments.
Recommended
DC-DC Converter High-Side Switch
In non-isolated buck and buck-boost converter high-side positions, the IRLB8748PBF handles 24V input rails with its 30V VDS rating leaving only modest transient margin. The 15 nC typical total gate charge balances switching loss and drive simplicity, and the logic-level gate threshold allows direct 5V PWM drive. The combination of low RDS(on) and low Qg results in excellent figure-of-merit (FOM) for 100 kHz to 1 MHz switching frequencies typical of modern point-of-load converters.
Recommended
Recommended Products Summary
Engineering reference data for IRLB8748PBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFB4321PBF | IRFB4110PBF | IRFZ48NPBF | IRF5305PBF | IRFR2405TRPBF | IRFB3806PBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Drain-Source Voltage (VDS) | 30 V | 100 V | 100 V | 55 V | -55 V (P-channel) | 55 V | 60 V |
| Continuous Drain Current (ID) | 92 A | 95 A | 120 A | 64 A | -31 A (P-channel) | 56 A | 100 A |
| On-Resistance RDS(on) max | 4.8 mOhm | 3.4 mOhm (lower) | 3.7 mOhm (lower) | 14 mOhm (higher) | 60 mOhm (higher, P-channel) | 16 mOhm (higher) | 5.9 mOhm (slightly higher) |
| Logic-Level Gate Drive | Yes (5V optimized) | Yes (5V optimized) | Yes (5V optimized) | No (standard 10V gate) | Yes (5V optimized) | No (standard 10V gate) | Yes (5V optimized) |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel | N-Channel |
| Technology Family | StrongIRFET / HEXFET | StrongIRFET / HEXFET | StrongIRFET / HEXFET | HEXFET | HEXFET | HEXFET | StrongIRFET / HEXFET |
| Power Dissipation (PD) at TC=25C | 75 W | 125 W | 125 W | 94 W | 75 W | 94 W | 125 W |
Key Differentiators
- Lowest RDS(on) for 30V TO-220AB N-channel StrongIRFET in this datasheet family (vs IRFZ48NPBF)
- Logic-level 5V gate drive enabled (vs IRFR2405TRPBF)
- 92A continuous drain current at TC=25C (vs IRFB4321PBF)
Design Notes
Estimated: at VDS=24V, ID=30A continuous operation with RDS(on)=4.8 mOhm at Tj=100C, the IRLB8748PBF dissipates approximately 4.3W. With the TO-220AB junction-to-case thermal resistance around 0.83 C/W, the junction temperature rise above case is approximately 3.6C. Adequate heatsinking is required to keep Tj below 175C; use thermal grease and a clip-on heatsink rated at no more than 5 C/W case-to-ambient for sustained 30A operation. The datasheet's SOA curve must be consulted for pulsed operation.
Place the IRLB8748PBF as close as possible to the gate driver to minimize gate-loop inductance. Use a 10 Ohm gate resistor to damp ringing and a 100k Ohm pull-down on the gate to ensure the MOSFET stays off when the driver is in high impedance. Keep the high-side and low-side source returns separate until they connect at the controller ground to avoid ground bounce in half-bridge topologies.
Do not exceed the +/- 20V VGS absolute maximum - gate over-voltage can permanently damage the thin gate oxide. In bridge topologies, ensure adequate dead time to prevent shoot-through. The body diode is not optimized for high-frequency hard switching; for synchronous rectification at high frequencies consider a part with a faster body diode or add an external Schottky in parallel.
Compliance Information
Pb-free PBF suffix indicates lead-free plating. Industrial market qualification per Infineon datasheet. Not AEC-Q100/101 qualified - for automotive use a Q-suffix variant would be required.
