IRF540ZPBF vs IRFR3710ZTRPBF Comparison
Detailed side-by-side comparison of IRF540ZPBF by Infineon and IRFR3710ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF540ZPBF | IRFR3710ZTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.42 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRF540ZPBF | β |
| Technology | HEXFET Power MOSFET (N-Channel DMOS) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (V_DS) | 100 V | β |
| Continuous Drain Current (I_D) at T_C=25C | 36 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS maximum rating] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | β |
| On-Resistance R_DS(on) max at V_GS=10V | 26.5 mOhm | β |
| Total Gate Charge (Q_g) | 42 nC | β |
| Power Dissipation (P_D) at T_C=25C | 92 W | β |
| Maximum Junction Temperature | 175 C | β |
| Operating Junction Temperature Range | -55 C to +175 C | β |
| Package | TO-220AB (through-hole, 3-lead) | TO-252AA (DPAK) |
| Mounting Type | Through Hole | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Automotive Qualified | Yes (per datasheet description) | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25C | β | 56 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed IDM] |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | β | 18 mOhm |
| Power Dissipation (PD) at TC=25C | β | 140 W |
| Operating Junction Temperature | β | -55C to +175C |